DTD113EK
NPN 500mA 50V Digital Transistors
(Bias Resistor Built-in Transistors)
Datasheet
lOutline
Parameter
Value
SMT3
OUT
IN
GND
V
CC
I
C(MAX.)
R
1
R
2
50V
500mA
1kW
1kW
DTD113EK
SOT-346 (SC-59)
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 1kW.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors（see inner circuit).
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTB113EK series
6) Lead Free/RoHS Compliant.
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lInner
circuit
lPackaging
specifications
Part No.
DTD113EK
Package
SMT3
Package
size
(mm)
2928
Taping
code
T146
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
180
8
3,000
Marking
F21
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© 2012 ROHM Co., Ltd. All rights reserved.
1/5
2012.07 - Rev.D
DTD113EK
lAbsolute
maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
CC
V
IN
I
C*1
P
D *2
T
j
T
stg
Values
50
-10
to
+10
500
200
150
-55
to
+150
Data Sheet
Unit
V
V
mA
mW
°C
°C
lElectrical
characteristics(Ta
= 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T *1
Conditions
V
CC
= 5V, I
O
= 100mA
V
O
= 0.3V, I
O
= 20mA
I
O
/ I
I
= 50mA / 2.5mA
V
I
= 5V
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 50mA
-
-
V
CE
= 10V, I
E
=
-50mA,
f = 100MHz
Min.
-
3.0
-
-
-
33
0.7
0.8
-
Typ.
-
-
0.1
-
-
-
1
1
200
Max.
0.5
-
0.3
7.2
0.5
-
1.3
1.2
-
Unit
V
V
mA
mA
-
kW
-
MHz
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
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© 2012 ROHM Co., Ltd. All rights reserved.
2/5
2012.07 - Rev.D
DTD113EK
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
INPUT VOLTAGE : V
I(on)
[V]
OUTPUT CURRENT : I
O
[mA]
OUTPUT CURRENT : I
O
[A]
INPUT VOLTAGE : V
I(off)
[V]
Fig.3 Output current vs. output voltage
500
I
I
= 5.0mA 4.5mA 4.0mA 3.5mA
3.0mA
Fig.4 DC current gain vs. output current
OUTPUT CURRENT : I
O
[mA]
400
2.5mA
300
2.0mA
200
1.5mA
100
Ta=25ºC
0
0
2
4
6
8
1.0mA
0A
10
DC CURRENT GAIN : G
I
OUTPUT VOLTAGE : V
O
[V]
OUTPUT CURRENT : I
O
[mA]
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© 2012 ROHM Co., Ltd. All rights reserved.
3/5
2012.07 - Rev.D
DTD113EK
lElectrical
characteristic curves(Ta
= 25°C)
Data Sheet
Fig.5 Output voltage vs. output current
OUTPUT VOLTAGE : V
O(on)
[V]
OUTPUT CURRENT : I
O
[mA]
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© 2012 ROHM Co., Ltd. All rights reserved.
4/5
2012.07 - Rev.D
DTD113EK
lDimensions
(Unit : mm)
D
Data Sheet
SMT3
A
c
Q
H
E
E
L1
e
b
A3
x
S A
e
Lp
A
A1
S
b2
Patterm of terminal position areas
DIM
A
A1
A3
b
c
D
E
e
H
E
L1
Lp
Q
x
y
DIM
e1
b2
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.35
0.50
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
-
0.10
-
0.10
MILIMETERS
MIN
MAX
2.10
0.60
-
0.90
INCHES
MIN
-
0
0.01
0.014
0.004
0.11
0.059
0.04
0.102
0.012
0.016
0.008
-
-
INCHES
MIN
0.08
-
-
0.024
0.035
MAX
0.118
0.024
0.028
0.012
0.004
0.004
0.02
0.01
0.118
0.071
MAX
0.051
0.004
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
l1
e1
5/5
2012.07 - Rev.D
分立器件
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