UM6K1N
Transistors
2.5V Drive Nch+Nch MOS FET
UM6K1N
Structure
Silicon N-channel MOS FET
External dimensions
(Unit : mm)
UMT6
2.0
1.3
Features
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for
portable equipment.
Applications
Interfacing, switching (30V, 100mA)
Packaging specifications
Package
Code
Type
UM6K1N
Absolute maximum ratings
(Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
ot
Parameter
Drain-source voltage
Gate-source voltage
Drain current
N
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
With each pin mounted on the recommended lands.
Thermal resistance
Parameter
Channel to ambient
∗
With each pin mounted on the recommended lands.
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0.9
0.65
(6)
0.65
(4)
(5)
1pin mark
(1)
(3)
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : K1
Inner circuit
(6)
(5)
Gate
Protection
Diode
0.1Min.
(2)
1.25
2.1
Taping
TN
3000
Tr1
Basic ordering unit (pieces)
(1)
Gate
Protection
Diode
∗
R
(1)
(2)
(3)
(4)
(5)
(6)
Tr1
Tr1
Tr2
Tr2
Tr2
Tr1
Source
Gate
Drain
Source
Gate
Drain
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
P
D
∗2
Tch
Tstg
Limits
30
±20
±100
±400
150
150
−55
to
+150
Unit
V
V
mA
mA
mW
°C
°C
Symbol
Rth(ch-a)
∗
Limits
833
1042
Unit
°C
/ W / TOTAL
°C
/ W / ELEMENT
or
0.7
(4)
∗
Tr2
(2)
(3)
∗
A protection diode has been built
in between the gate and the source
to protect against static electricity
when the product is in use.
Use the protection circuit when
rated voltages are exceeded.
Rev.B
1/3
UM6K1N
Transistors
Electrical characteristics
(Ta=25°C)
<It is the same characteristics for Tr1 and Tr2.>
Parameter
Symbol
Min.
−
30
−
0.8
−
−
20
−
−
−
−
−
−
−
Typ.
−
−
−
−
5
7
−
13
9
4
15
35
80
80
Max.
±1
−
1.0
1.5
8
13
−
−
−
−
−
−
−
−
Gate-source leakage
I
GSS
Drain-source breakdown voltage
V
(BR) DSS
I
DSS
Zero gate voltage drain current
Gate threshold voltage
V
GS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
R
DS (on)
Unit
µA
V
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
Conditions
V
GS
=±20V, V
DS
=0V
I
D
= 10µA, V
GS
=0V
V
DS
= 30V, V
GS
=0V
V
DS
= 3V, I
D
= 100µA
I
D
= 10mA, V
GS
= 4V
I
D
= 1mA, V
GS
= 2.5V
I
D
= 10mA, V
DS
= 3V
V
DS
= 5V
V
GS
=0V
f=1MHz
V
DD
5V
I
D
= 10mA
V
GS
= 5V
R
L
=500Ω
R
G
=10Ω
Electrical characteristic curves
0.15
4V
0.1
0.05
0
0
ec
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Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
GATE THRESHOLD VOLTAGE : V
GS
(th) (V)
200m
3V
100m
50m
V
DS
=3V
Pulsed
2
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
3.5V
1.5
20m
10m
5m
2m
1m
2.5V
1
2V
0.5m
Ta=125
°C
75
°C
25
°C
−25°C
0.5
V
GS
=1.5V
0.2m
1
2
3
4
5
0.1m
0
1
2
3
4
0
−50 −25
DRAIN-SOURCE VOLTAGE : V
DS
(V)
GATE-SOURCE VOLTAGE : V
GS
(V)
CHANNEL TEMPERATURE : Tch (
°C)
Fig.1 Typical Output Characteristics
Fig.2 Typical Transfer Characteristics
Fig.3 Gate Threshold Voltage vs.
Channel Temperature
R
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
ot
20
10
5
Ta=125
°C
75
°C
25
°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
20
10
5
Ta=125
°C
75
°C
25
°C
−25°C
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS
(on) (Ω)
V
GS
=4V
Pulsed
50
V
GS
=2.5V
Pulsed
15
10
N
2
1
0.5
0.001 0.002
2
1
0.5
0.001 0.002
5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0
0
DRAIN CURRENT : I
D
(A)
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( )
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current ( )
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
or
V
DS
=3V
I
D
=0.1mA
0
25
50
75
100
125 150
Ta=25
°C
Pulsed
I
D
=0.1A
I
D
=0.05A
5
10
15
20
Rev.B
2/3
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
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© 2013 ROHM Co., Ltd. All rights reserved.
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5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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non-compliance with any applicable laws or regulations.
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