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BD4732G-TR

产品类别电源/电源管理    电源电路   
文件大小957KB,共13页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准
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BD4732G-TR规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称ROHM(罗姆半导体)
零件包装代码SSOP
包装说明LSSOP, TSOP5/6,.11,37
针数5
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time7 weeks
可调阈值NO
模拟集成电路 - 其他类型POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码R-PDSO-G5
长度2.9 mm
信道数量1
功能数量1
端子数量5
最高工作温度75 °C
最低工作温度-20 °C
封装主体材料PLASTIC/EPOXY
封装代码LSSOP
封装等效代码TSOP5/6,.11,37
封装形状RECTANGULAR
封装形式SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度1.35 mm
标称供电电压 (Vsup)3.086 V
表面贴装YES
技术BIPOLAR
温度等级COMMERCIAL EXTENDED
端子形式GULL WING
端子节距0.95 mm
端子位置DUAL
阈值电压标称+3.2V
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度1.6 mm

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Datasheet
Voltage Detector IC Series
Bipolar
Voltage Detector ICs
BD47xx series
●General
Description
The BD47xx series is a Voltage Detector IC,
developed to prevent system errors at transient state,
when the power of CPU or logic circuit switches
ON/OFF or in cases of momentary shut down. These
ICs consist of three terminals (power supply, GND and
reset output) to detect power supply voltages and
outputs reset signals of various systems. These ICs
are ultra-compact and have low current consumption,
making them ideal for portable products.
●Key
Specifications
Detection voltage range:
1.9V to 4.6V (Typ.)
0.1V steps
High accuracy detection voltage:
±1%
Low current consumption:
1.6µA (Typ.)
Operating temperature range:
-40°C to +75°C
●Package
SSOP5
2.90mm x 2.80mm x 1.25mm
●Features
High accuracy detection
Low current consumption
Very small package
Open collector “L” reset output
Package SSOP5 is similar to SOT-23-5 (JEDEC)
●Applications
Circuits using microcontrollers or logic circuits that require
a reset.
●Typical
Application Circuit
V
DD
R
L
BD47xx series
V
OUT
V
DD
RESET
CPU
Micro-controller
C
L
GND
GND
●Connection
Diagram
SSOP5
TOP VIEW
V
DD
●Pin
Descriptions
V
OUT
PIN No.
1
2
3
4
5
Symbol
N.C.
SUB
GND
V
OUT
V
DD
Function
Unconnected Terminal
Substrate*
GND
Reset Output
Power Supply Voltage
Marking
N.C.
SUB GND
Lot. No
*
Substrate Pin should be connected with GND
○This
product is not designed for protection against radioactive rays
○Product
structure:Silicon monolithic integrated circuit
.
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
1/10
TSZ02201-0R7R0G300020-1-2
21.Jun.2016 Rev.007

 
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