EMZ1 / UMZ1N / IMZ1A
General purpose transistor (dual transistors)
<For Tr1(NPN)>
Datasheet
l
Outline
Parameter
V
CEO
I
C
<For Tr2(PNP)>
Value
50V
150mA
SOT-563
SOT-363
EMZ1
(EMT6)
SOT-457
UMZ1N
(UMT6)
Parameter
V
CEO
I
C
Value
-50V
-150mA
IMZ1A
(SMT6)
l
Features
1)Both a 2SA1037AK chip and 2SC2412K
chip in a EMT or UMT or SMT package.
2)Mounting possible with EMT3 or UMT3 or
SMT3 automatic mounting machines.
3)Transistor elements are independent,
eliminating interference.
4)Mounting cost and area can be cut in half.
l
Inner circuit
EMZ1 / UMZ1N
IMZ1A
l
Application
GENERAL PURPOSE SMALL SIGNAL AMPLIFIER
l
Packaging specifications
Part No.
EMZ1
UMZ1N
IMZ1A
Package
SOT-563
(EMT6)
SOT-363
(UMT6)
SOT-457
(SMT6)
Package
size
1616
2021
2928
Taping
code
T2R
TR
T108
Reel size Tape width
(mm)
(mm)
180
180
180
8
8
8
Basic
ordering
unit.(pcs)
8000
3000
3000
Marking
Z1
Z1
Z1
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© 2015 ROHM Co., Ltd. All rights reserved.
1/11
20150825 - Rev.003
EMZ1 / UMZ1N / IMZ1A
l
Absolute maximum ratings
(T
a
= 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
EMZ1/ UMZ1N
Power dissipation
IMZ1A
Junction temperature
Range of storage temperature
l
Electrical characteristics
(T
a
= 25°C) <For Tr1(NPN)>
Datasheet
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D*1 *2
P
D*1 *3
T
j
T
stg
Tr1(NPN) Tr2(PNP)
Unit
60
-60
V
50
-50
V
7
-6
V
150
-150
mA
150
mW/Total
300
mW/Total
150
℃
-55 to +150
℃
Values
Typ.
-
-
-
-
-
-
-
180
2.0
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
Conditions
I
C
= 50μA
I
C
= 1mA
I
E
= 50μA
V
CB
= 60V
V
EB
= 7V
I
C
= 50mA, I
B
= 5mA
V
CE
= 6V, I
C
= 1mA
V
CE
= 12V, I
E
= -2mA,
f = 100MHz
V
CB
= 12V, I
E
= 0A,
f = 1MHz
Min.
60
50
7
-
-
-
120
-
-
Max.
-
-
-
100
100
400
560
-
3.5
Unit
V
V
V
nA
nA
mV
-
MHz
pF
DC current gain
Transition frequency
Output capacitance
l
Electrical characteristics
(T
a
= 25°C) <For Tr2(PNP)>
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
Conditions
I
C
= -50μA
I
C
= -1mA
Min.
-60
-50
-6
-
-
-
120
-
-
Values
Typ.
-
-
-
-
-
-
-
140
4.0
Max.
-
-
-
-100
-100
-500
560
-
5.0
Unit
V
V
V
nA
nA
mV
-
MHz
pF
I
E
= -50μA
V
CB
= -60V
V
EB
= -6V
Collector-emitter saturation voltage
I
C
= -50mA, I
B
= -5mA
DC current gain
V
CE
= -6V, I
C
= -1mA
V
CE
= -12V, I
E
= 2mA,
f
T
Transition frequency
f = 100MHz
V
CB
= -12V, I
E
= 0A,
C
ob
Output capacitance
f = 1MHz
*1 Each terminal mounted on a reference land.
*2 120mW per element must not be exceeded.
*3 200mW per element must not be exceeded.
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© 2015 ROHM Co., Ltd. All rights reserved.
2/11
20150825 - Rev.003
EMZ1 / UMZ1N / IMZ1A
l
Electrical characteristic curves(T
a
=25°C)
<For Tr1(NPN)>
Datasheet
Fig.1 Ground Emitter Propagation
Characteristics
Fig.2 Grounded Emitter Output
Characteristics
Fig.3 DC Current Gain vs. Collector
Current (I)
Fig.4 DC Current Gain vs. Collector
Current (lI)
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© 2015 ROHM Co., Ltd. All rights reserved.
3/11
20150825 - Rev.003
EMZ1 / UMZ1N / IMZ1A
l
Electrical characteristic curves(T
a
=25°C)
<For Tr1(NPN)>
Datasheet
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current(l)
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current (I)
Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current (I)
Fig.8 Gain Bandwith Product vs.
Emitter Current
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
4/11
20150825 - Rev.003
EMZ1 / UMZ1N / IMZ1A
l
Electrical characteristic curves(T
a
=25°C)
<For Tr1(NPN)>
Datasheet
Fig.9 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
Fig.10 Safe Operating Area
Fig.11 Safe Operating Area
Fig.12 Safe Operating Area
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© 2015 ROHM Co., Ltd. All rights reserved.
5/11
20150825 - Rev.003