Product Specification
PE42442
Product Description
The PE42442 is a HaRP™ technology-enhanced
absorptive SP4T RF switch designed for use in 3G/4G
wireless infrastructure and other high performance RF
applications.
This switch is a pin-compatible four throw version of the
PE42451 with a wider frequency and power supply range.
It is comprised of four symmetric RF ports with very high
isolation up to 6 GHz. An integrated CMOS decoder
facilitates a two- or three-pin 1.8V CMOS control
interface. In addition, no external blocking capacitors are
required if 0 VDC is present on the RF ports.
The PE42442 is manufactured on Peregrine’s
UltraCMOS
®
process, a patented variation of silicon-on-
insulator (SOI) technology on a sapphire substrate.
Peregrine’s HaRP technology enhancements deliver high
linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the
performance of GaAs with the economy and integration of
conventional CMOS.
UltraCMOS
®
SP4T RF Switch
30 MHz–6 GHz
Features
Four symmetric, absorptive RF ports
High isolation
61 dB @ 900 MHz
55 dB @ 2100 MHz
52 dB @ 2700 MHz
43 dB @ 4000 MHz
32 dB @ 6000 MHz
High linearity
IIP2 of 97 dBm
IIP3 of 58 dBm
1.8V control logic compatible
105
°C
operating temperature
Fast switching time of 255 ns
Two- or three-pin CMOS logic control
External negative supply option
ESD performance
4 kV HBM on RF pins to GND
2 kV HBM on all pins
Figure 1. Functional Diagram
Figure 2. Package Type
24-lead 4
4 mm QFN
DOC-59069
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PE42442
Product Specification
Table 1. Electrical Specifications @ +25 °C (Z
S
= Z
L
= 50Ω ) unless otherwise noted
Normal mode
1
: V
DD
= 3.3V, V
SS_EXT
= 0V or Bypass mode
2
: V
DD
= 3.3V, V
SS_EXT
= –3.3V
Parameter
Operating frequency
450 MHz
900 MHz
2100 MHz
2700 MHz
4000 MHz
6000 MHz
450 MHz
900 MHz
2100 MHz
2700 MHz
4000 MHz
6000 MHz
450 MHz
900 MHz
2100 MHz
2700 MHz
4000 MHz
6000 MHz
30–4000 MHz
4000–6000 MHz
30–4000 MHz
4000–6000 MHz
900 MHz
1900 MHz
1900 MHz
50% control to 90% or 10% RF
62
55
52
50
42
27
61
56
51
50
41
29
Path
Condition
Min
30
0.85
0.90
1.10
1.15
1.25
1.90
67
61
55
52
43
32
65
61
54
52
44
32
17
12
22
19
35
97
58
255
330
Typ
Max
6000
1.00
1.05
1.35
1.40
1.50
2.35
Unit
MHz
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
ns
Insertion loss
RFC–RFX
Isolation
RFC–RFX
Isolation
RFX–RFX
Return loss (active port)
Return loss (terminated port)
Input 0.1 dB compression point
3
Input IP2
Input IP3
Switching time
RFX
RFX
RFC–RFX
RFC–RFX
RFC–RFX
Notes: 1. Normal mode: single external positive supply used.
2. Bypass mode: both external positive supply and external negative supply used.
3. The input 0.1 dB compression point is a linearity figure of merit. Refer to
Table 3
for the operating RF input power (50Ω).
©2013-2017 Peregrine Semiconductor Corp. All rights reserved.
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Document No. DOC-33414-7
│
UltraCMOS
®
RFIC Solutions
PE42442
Product Specification
Figure 3. Pin Configuration (Top View)
Vss
EXT
Table 3. Operating Ranges
Parameter
Symbol
Min
Typ
Max
Unit
Normal mode
1
Supply voltage
Supply current
Bypass mode
2
Supply voltage
Supply current
Negative supply
voltage
Normal or Bypass mode
V
DD
I
DD
V
SS_EXT
–3.6
2.7
50
–3.2
5.5
V
µA
V
V
DD
I
DD
2.3
110
5.5
V
µA
GND
GND
GND
RFC
24
23
22
21
20
11
10
12
7
8
9
19
V3
GND
GND
GND
GND
RF3
RF2
Digital input high
(V1, V2, V3)
Digital input low
(V1, V2, V3)
Digital input current
3
V
IH
V
IL
I
CTRL
P
MAX,CW
P
MAX,TERM
T
OP
1.17
–0.3
3.6
0.6
1
33
24
V
V
µA
dBm
dBm
°C
Table 2. Pin Descriptions
Pin #
1-3, 4, 6, 7, 9,
10, 12, 13,
15, 21, 23, 24
5
8
11
14
16
17
18
19
20
22
Pad
Name
GND
RF4
1
RF3
1
RF2
1
RF1
1
V
DD
V1
V2
V3
2
Description
Ground
RF port 4
RF port 3
RF port 2
RF port 1
Supply voltage
Digital control logic input 1
Digital control logic input 2
Digital control logic input 3
External Vss negative voltage control/
ground
RF common
Exposed pad: Ground for proper operation
RF input power, CW
RF input power into
terminated ports, CW
Operating
temperature range
Notes:
–40
+105
1. Normal mode: connect pin 20 to GND to enable internal negative
voltage generator.
2. Bypass mode: apply a negative voltage to V
SS_EXT
(pin 20) to
bypass and disable internal negative voltage generator.
3. The pull-down resistor in the EVK schematic may increase control
current.
Table 4. Absolute Maximum Ratings
Parameter/Condition
Supply voltage
Voltage on any DC input
Maximum input power
Storage temperature range
ESD voltage HBM
1
All pins
RF pins to ground
ESD voltage MM
2
, all pins
ESD voltage CDM
3
, all pins
Symbol
V
DD
V
I
P
MAX_ABS
T
ST
V
ESD_HBM
V
ESD_MM
V
ESD_CDM
–65
Min
–0.3
–0.3
Max
5.5
3.6
34
+150
2.0
4.0
150
250
Unit
V
V
dBm
°C
kV
kV
V
V
V
SS_EXT3
RFC
1
GND
Notes: 1. RF pins 5, 8, 11, 14 and 22 must be at 0 VDC. The RF pins do not
require DC blocking capacitors for proper operation if the 0 VDC
requirement is met.
2. Pin 19 must be grounded for 2-pin control, refer to
Table 5A.
3. Use V
SS_EXT
(pin 20, refer to
Table 3)
to bypass and disable internal
negative voltage generator. Connect V
SS_EXT
(pin 20, V
SS_EXT
= GND) to
enable internal negative voltage generator.
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be
restricted to the limits in the Operating Ranges
table. Operation between operating range
maximum and absolute maximum for extended
periods may reduce reliability.
Notes: 1. Human Body Model (MIL_STD 883 Method 3015)
2. Machine Model (JEDEC JESD22-A115)
3. Charged Device Model (JEDEC JESD22-C101D)
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PE42442
Product Specification
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the rating specified.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Switching Frequency
The PE42442 has a maximum 25 kHz switching
rate in normal mode (pin 20 = GND). A faster
switching rate is available in bypass mode (pin 20
= V
SS_EXT
). The rate at which the PE42442 can be
switched is then limited to the switching time as
specified in
Table 1.
Switching frequency describes the time duration
between switching events. Switching time is the
time duration between the point the control signal
reaches 50% of the final value and the point the
output signal reaches within 10% or 90% of its
target value.
Moisture Sensitivity Level
The Moisture Sensitivity Level rating for the
PE42442 in the 24-lead 4
4
mm QFN package
is MSL1.
Table 5. Truth Table (3-pin control)*
Mode
Unsupported
RF1 on
RF2 on
RF3 on
RF4 on
All off
All off
Unsupported
V3
0
0
0
0
1
1
1
1
V2
0
0
1
1
0
0
1
1
V1
0
1
0
1
0
1
0
1
Note: * 3-pin control intended for legacy product support to PE42450 and
PE42451 or if All Off mode is required. Logic States 000 and 111 are
unsupported and should not be used under any operating conditions.
Table 5A. Truth Table (2-pin control
1
)
2
Mode
RF4 on
RF1 on
RF2 on
RF3 on
Notes:
V2
0
0
1
1
V1
0
1
0
1
1. Pin 19 = V3 must be grounded.
2. 2-pin control is recommended for new product designs if All Off
mode is not required.
Optional External V
SS
Control (V
SS_EXT
)
For applications the require a faster switching rate
or spur-free performance, this part can be
operated in bypass mode. Bypass mode requires
an external negative voltage in addition to an
external V
DD
supply voltage.
As specified in
Table 3,
the external negative
voltage (V
SS_EXT
) when applied to pin 20 will
disable and bypass the internal negative voltage
generator.
Spurious Performance
The typical low-frequency spurious performance
of the PE42442 in normal mode is –120 dBm
(pin 20 = GND). If spur-free performance is
desired, the internal negative voltage generator
can be disabled by applying a negative voltage to
V
SS_EXT
(pin 20).
©2013-2017 Peregrine Semiconductor Corp. All rights reserved.
Page 4 of 11
Document No. DOC-33414-7
│
UltraCMOS
®
RFIC Solutions
PE42442
Product Specification
Typical Performance Data @ 25 °C and V
DD
= 3.3V
unless otherwise noted
Figure 4. Insertion Loss (All Paths)
0
−0.5
Insertion Loss (dB)
−1
−1.5
−2
−2.5
RF1
RF2
RF3
RF4
1
2
3
Frequency (GHz)
4
5
6
−3
0
Figure 5. Insertion Loss vs Temp (RFC–RFX)
0
Figure 6. Insertion Loss vs V
DD
(RFC–RFX)
0
−0.5
−0.5
Insertion Loss (dB)
−1.5
Insertion Loss (dB)
−
40 C
+25 C
+85 C
+105 C
1
2
3
Frequency (GHz)
4
5
6
−1
−1
−1.5
−2
−2
−2.5
−2.5
−3
0
2.3 V
3.3 V
5.5 V
1
2
3
Frequency (GHz)
4
5
6
−3
0
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