MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
Features
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic
Collector
−Emitter
Voltage
MMBTA42, SMMBTA42
MMBTA43
Collector
−Base
Voltage
MMBTA42, SMMBTA42
MMBTA43
Emitter
−Base
Voltage
MMBTA42, SMMBTA42
MMBTA43
Collector Current
−
Continuous
Symbol
V
CEO
Value
300
200
300
200
6.0
6.0
500
Unit
Vdc
1
Vdc
2
SOT−23 (TO−236)
CASE 318
STYLE 6
3
V
CBO
V
EBO
Vdc
I
C
Symbol
P
D
mAdc
MARKING DIAGRAMS
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Max
225
1.8
556
300
2.4
417
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
1D M
G
G
1
M1E M
G
G
R
qJA
P
D
R
qJA
T
J
, T
stg
1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
©
Semiconductor Components Industries, LLC, 1994
October, 2016
−
Rev. 13
1
Publication Order Number:
MMBTA42LT1/D
MMBTA42L, SMMBTA42L, MMBTA43L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
(V
CB
= 160 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0)
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 30 mAdc, V
CE
= 10 Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
MMBTA42, SMMBTA42
MMBTA43
f
T
C
cb
50
−
MHz
pF
Both Types
Both Types
MMBTA42, SMMBTA42
MMBTA43
MMBTA42, SMMBTA42
MMBTA43
V
CE(sat)
h
FE
25
40
40
40
−
−
−
−
−
−
−
0.5
0.5
0.9
Vdc
−
MMBTA42, SMMBTA42
MMBTA43
MMBTA42, SMMBTA42
MMBTA43
MMBTA42, SMMBTA42
MMBTA43
MMBTA42, SMMBTA42
MMBTA43
V
(BR)CEO
300
200
300
200
6.0
−
−
−
−
−
Vdc
Symbol
Min
Max
Unit
V
(BR)CBO
Vdc
V
(BR)EBO
I
CBO
Vdc
mAdc
−
−
−
−
0.1
0.1
0.1
0.1
I
EBO
mAdc
V
BE(sat)
Vdc
−
−
3.0
4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
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2
MMBTA42L, SMMBTA42L, MMBTA43L
TYPICAL CHARACTERISTICS
1000
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 10 V
h
FE
, DC CURRENT GAIN
1.2
I
C
/I
B
= 10
1.0
0.8
0.6
0.4
0.2
−55°C
0.0
0.1
1
10
100
25°C
150°C
T
J
= 150°C
100
25°C
−55°C
10
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
−55°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
10
I
C
/I
B
= 10
100
150°C
25°C
0.9
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
10
I
C
/I
B
= 10
100
150°C
−55°C
25°C
I
C
, COLLECTOR CURRENT (mA)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.0
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Base−Emitter Saturation Voltage vs.
Collector Current
q
VB
, TEMPERATURE COEFFICIENT (mV/°C)
0
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
0.1
1
q
VB
, for V
BE
−55°C
to 150°C
10
100
0.1
0.1
V
CE
= 10 V
C, CAPACITANCE (pF)
100
Figure 4. Base−Emitter On Voltage vs.
Collector Current
C
ibo
T
J
= 25°C
f = 1 MHz
10
C
obo
1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Base−Emitter Temperature
Coefficient
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3
Figure 6. Capacitance
MMBTA42L, SMMBTA42L, MMBTA43L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
_
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10
_
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
0.90
3X
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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