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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
March 2014
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
• High Speed Switching
• Low Saturation Voltage: V
CE(sat)
= 2.5 V @ I
C
= 60 A
• High Input Impedance
• Built-in Fast Recovery Diode
General Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1000V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device offers the optimum perfor-
mance for hard switching application such as UPS, welder
applications.
Applications
• UPS, Welder
C
G
G C E
TO-264 3L
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
P
D
T
J
T
stg
T
L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Ratings
1000
25
60
42
200
15
180
72
-55 to +150
-55 to +150
300
Unit
V
V
A
A
A
A
W
W
o
o
o
C
C
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
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