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NSS30100LT1G

产品描述额定功率:310mW 集电极电流Ic:1A 集射极击穿电压Vce:30V 晶体管类型:PNP PNP,Vceo=-30V,Ic=-1A
产品类别分立半导体    晶体管   
文件大小98KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSS30100LT1G概述

额定功率:310mW 集电极电流Ic:1A 集射极击穿电压Vce:30V 晶体管类型:PNP PNP,Vceo=-30V,Ic=-1A

NSS30100LT1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码SOT-23
包装说明SMALL OUTLINE, R-PDSO-G3
针数3
制造商包装代码318-08
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time1 week
最大集电极电流 (IC)1 A
集电极-发射极最大电压30 V
配置SINGLE
最小直流电流增益 (hFE)40
JEDEC-95代码TO-236
JESD-30 代码R-PDSO-G3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型PNP
最大功率耗散 (Abs)0.71 W
认证状态Not Qualified
表面贴装YES
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间40
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)100 MHz
Base Number Matches1

文档预览

下载PDF文档
NSS30100LT1G
30 V, 2 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
−30
−50
−5.0
−1.0
−2.0
Unit
Vdc
Vdc
Vdc
A
A
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
www.onsemi.com
30 VOLTS
2.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
200 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
(Single Pulse < 10 sec.)
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
Max
310
2.5
R
θJA
(Note 1)
P
D
(Note 2)
403
710
5.7
R
θJA
(Note 2)
P
Dsingle
(Note 3)
T
J
, T
stg
176
575
−55 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
mW
°C
MARKING DIAGRAM
VS4M
G
G
1
VS4 = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
NSS30100LT1G,
NSV30100LT1G
Package
SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ Minimum Pad.
2. FR− 4 @ 1.0 X 1.0 inch Pad.
3. Refer to Figure 8.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2005
1
October, 2016 − Rev. 4
Publication Order Number:
NSS30100L/D

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