MMBT3904WT1G, NPN,
SMMBT3904WT1G, NPN,
MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
General Purpose
Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
Features
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COLLECTOR
3
1
BASE
2
EMITTER
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Collector −Base Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Emitter −Base Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Collector Current − Continuous
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Symbol
V
CEO
40
−40
V
CBO
60
−40
V
EBO
6.0
−5.0
I
C
200
−200
mAdc
M
G
Vdc
xx
Vdc
1
Value
Unit
Vdc
3
1
2
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
xx M
G
G
= AM for MMBT3904WT1,
SMMBT3904WT
= 2A for MMBT3906WT1,
SMMBT3906WT1
= Date Code*
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
@T
A
= 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55 to +150
Unit
mW
°C/W
°C
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
†
3000 / Tape &
Reel
3000 / Tape &
Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
MMBT3904WT1G,
SC−70/
SMMBT3904WT1G SOT−323
(Pb−Free)
MMBT3906WT1G,
SMMBT3906WT1G
SC−70/
SOT−323
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
November, 2015 − Rev. 9
Publication Order Number:
MMBT3904WT1/D
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= −1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
(I
C
= −10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
(I
E
= −10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
h
FE
MMBT3904WT1, SMMBT3904WT1
40
70
100
60
30
60
80
100
60
30
V
CE(sat)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
V
BE(sat)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
−
−
−
−
0.2
0.3
−0.25
−0.4
Vdc
−
−
300
−
−
−
−
300
−
−
Vdc
−
V
(BR)CEO
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
V
(BR)CBO
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
V
(BR)EBO
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
I
BL
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
I
CEX
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
−
−
50
−50
−
−
50
−50
nAdc
6.0
−5.0
−
−
nAdc
60
−40
−
−
Vdc
40
−40
−
−
Vdc
Vdc
Symbol
Min
Max
Unit
MMBT3906WT1, SMMBT3906WT1
2. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
2.0%.
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2
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
f
T
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
C
obo
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
C
ibo
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
h
ie
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
h
re
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
h
fe
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
h
oe
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
NF
−
−
5.0
4.0
1.0
3.0
40
60
dB
100
100
400
400
mmhos
0.5
0.1
8.0
10
−
1.0
2.0
10
12
X 10
− 4
−
−
8.0
10.0
k
W
−
−
4.0
4.5
pF
300
250
−
−
pF
MHz
Symbol
Min
Max
Unit
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k
W,
f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
(V
CE
= −5.0 Vdc, I
C
= −100
mAdc,
R
S
= 1.0 k
W,
f = 1.0 kHz)
MMBT3906WT1, SMMBT3906WT1
SWITCHING CHARACTERISTICS
Characteristic
Delay Time
Condition
(V
CC
= 3.0 Vdc, V
BE
= − 0.5 Vdc)
MMBT3904WT1, SMMBT3904WT1
(V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc)
MMBT3906WT1, SMMBT3906WT1
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
(I
C
= −10 mAdc, I
B1
= −1.0 mAdc)
MMBT3906WT1, SMMBT3906WT1
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
MMBT3904WT1, SMMBT3904WT1
(V
CC
= −3.0 Vdc, I
C
= −10 mAdc)
MMBT3906WT1, SMMBT3906WT1
(I
B1
= I
B2
= 1.0 mAdc)
(I
B1
= I
B2
= −1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
Symbol
t
d
Min
−
−
Max
35
35
Unit
ns
Rise Time
t
r
−
−
t
s
−
−
t
f
−
−
35
35
Storage Time
200
225
ns
Fall Time
50
75
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3
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
+3 V
+10.9 V
10 k
0
- 0.5 V
< 1 ns
C
S
< 4 pF*
- 9.1 V
< 1 ns
1N916
C
S
< 4 pF*
275
+3 V
+10.9 V
275
10 k
DUTY CYCLE = 2%
300 ns
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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4
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
MMBT3904WT1, SMMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
500
I
C
/I
B
= 10
300
200
t r, RISE TIME (ns)
100
70
50
30
20
10
7
5
1.0
MMBT3904WT1
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
V
CC
= 40 V
I
C
/I
B
= 10
500
300
200
100
70
50
30
20
10
7
5
MMBT3904WT1
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
TIME (ns)
t
r
@ V
CC
= 3.0 V
40 V
15 V
2.0 V
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Turn −On Time
500
300
200
t s, STORAGE TIME (ns)
′
100
70
50
30
20
10
7
5
1.0
MMBT3904WT1
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 20
I
C
/I
B
= 10
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
t f , FALL TIME (ns)
500
300
200
Figure 4. Rise Time
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
100
70
50
30
20
10
7
5
1.0
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
MMBT3904WT1
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Storage Time
Figure 6. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1.0
2.0
4.0
10
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50
mA
14
f = 1.0 kHz
12
10
8
6
4
2
MMBT3904WT1
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
10
MMBT3904WT1
20
40
100
I
C
= 100
mA
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
mA
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (k OHMS)
Figure 7. Noise Figure
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5
Figure 8. Noise Figure
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