电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MJ4502G

产品描述额定功率:200W 集电极电流Ic:30A 集射极击穿电压Vce:100V 晶体管类型:PNP PNP,100V,30A
产品类别分立半导体    晶体管   
文件大小121KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 全文预览

MJ4502G在线购买

供应商 器件名称 价格 最低购买 库存  
MJ4502G - - 点击查看 点击购买

MJ4502G概述

额定功率:200W 集电极电流Ic:30A 集射极击穿电压Vce:100V 晶体管类型:PNP PNP,100V,30A

MJ4502G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码TO-204AA
包装说明LEAD FREE, CASE 1-07, TO-204AA, 2 PIN
针数2
制造商包装代码1-07
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
外壳连接COLLECTOR
最大集电极电流 (IC)30 A
集电极-发射极最大电压90 V
配置SINGLE
最小直流电流增益 (hFE)25
JEDEC-95代码TO-3
JESD-30 代码O-MBFM-P2
JESD-609代码e3
元件数量1
端子数量2
最高工作温度200 °C
封装主体材料METAL
封装形状ROUND
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
极性/信道类型PNP
最大功率耗散 (Abs)200 W
认证状态Not Qualified
表面贴装NO
端子面层Tin (Sn)
端子形式PIN/PEG
端子位置BOTTOM
处于峰值回流温度下的最长时间40
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)2 MHz

文档预览

下载PDF文档
MJ4502
High-Power PNP Silicon
Transistor
This transistor is for use as an output device in complementary audio
amplifiers to 100−Watts music power per channel.
Features
http://onsemi.com
High DC Current Gain
h
FE
= 25−100 @ I
C
= 7.5 A
Excellent Safe Operating Area
Complement to the NPN MJ802
Pb−Free Package is Available*
30 AMPERE
POWER TRANSISTOR
PNP SILICON
100 VOLTS
200 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CER
V
CB
V
CEO
V
EB
I
C
I
B
P
D
T
J
, T
stg
Value
100
100
90
4.0
30
7.5
200
1.14
−65
to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
q
JC
Max
0.875
Unit
_C/W
MJ4502G
AYYWW
MEX
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MJ4502
G
A
YY
WW
MEX
= Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
= Country of Origin
ORDERING INFORMATION
Device
MJ4502
MJ4502G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Package
TO−204
TO−204
(Pb−Free)
Shipping
100 Units / Tray
100 Units / Tray
©
Semiconductor Components Industries, LLC, 2009
October, 2009
Rev. 12
1
Publication Order Number:
MJ4502/D

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2083  1108  1568  2367  91  11  51  31  53  43 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved