NLASB3157
SPDT, 3
W
R
ON
Switch
The NLASB3157 is an advanced CMOS analog switch fabricated
with silicon gate CMOS technology. It achieves very low
propagation delay and RDS
ON
resistances while maintaining CMOS
low power dissipation. Analog and digital voltages that may vary
across the full power−supply range (from V
CC
to GND). This device
is a drop in replacement for the NC7SB3157.
The select pin has overvoltage protection that allows voltages
above V
CC,
up to 7.0 V to be present on the pin without damage or
disruption of operation of the part, regardless of the operating
voltage.
Features
6
1
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MARKING
DIAGRAMS
SC−88
DF SUFFIX
CASE 419B
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
AF MG
G
High Speed: t
PD
= 1.0 ns (Typ) at V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 2.0
mA
(Max) at T
A
= 25°C
Standard CMOS Logic Levels
High Bandwidth, Improved Linearity
Switches Standard NTSC/PAL Video, Audio, SPDIF and HDTV
May be used for Clock Switching, Data Multiplexing, etc.
R
ON
Typical = 3
W
@ V
CC
= 4.5 V
Break Before Make Circuitry, Prevents Inadvertent Shorts
2 Devices can Switch Balanced Signal Pairs,
e.g. LVDS
u
200 Mb/s
Latchup Performance Exceeds 300 mA
Pin for Pin Drop in for NC7SB3157
Tiny SC88 and WDFN6 Packages
ESD Performance:
♦
Human Body Model;
u
2000 V;
♦
Machine Model;
u
200 V
NLVASB3157 Features Extended Automotive Temperature Range;
−55°C
to +125°C (See Appendix A)
Pb−Free Packages are Available
WDFN6
MT SUFFIX
CASE 506AS
FM
AF, F
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
FUNCTION TABLE
Select Input
L
H
Function
B0 Connected to A
B1 Connected to A
ORDERING INFORMATION
Device
NLASB3157DFT2
NLASB3157DFT2G
NLVASB3157DFT2
NLVASB3157DFT2G
NLASB3157MTR2G
Package
SC−88
SC−88
(Pb−Free)
SC−88
SC−88
(Pb−Free)
WDFN6
(Pb−Free)
Shipping
†
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
August, 2013
−
Rev. 13
1
Publication Order Number:
NLASB3157/D
NLASB3157
SC−88
B
1
1
6
Select
B
1
GND
B
0
1
2
3
WDFN6
6
5
4
(Top View)
Select
V
CC
A
GND
2
5
V
CC
B
0
3
4
A
(Top View)
Figure 1. Pin Assignment & Logic Diagram
MAXIMUM RATINGS
Rating
Supply Voltage
DC Switch Voltage (Note 1)
DC Input Voltage (Note 1)
DC Input Diode Current @ V
IN
t
0 V
DC Output Current
DC V
CC
or Ground Current
Storage Temperature Range
Junction Temperature Under Bias
Junction Lead Temperature (Soldering, 10 Seconds)
Power Dissipation @ +85°C
Symbol
V
CC
V
IS
V
IN
I
IK
I
OUT
I
CC
/I
GND
T
stg
T
J
T
L
P
D
Value
−0.5
to +7.0
−0.5
to V
CC
+ 0.5
−0.5
to + 7.0
−50
128
+100
−65
to +150
150
260
180
Unit
V
V
V
mA
mA
mA
°C
°C
°C
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The input and output negative voltage ratings may be exceeded if the input and output diode current ratings are observed.
RECOMMENDED OPERATING CONDITIONS
(Note 2)
Characteristic
Supply Voltage Operating
Select Input Voltage
Switch Input Voltage
Output Voltage
Operating Temperature
Input Rise and Fall Time
Control Input V
CC
= 2.3 V−3.6 V
Control Input V
CC
= 4.5 V−5.5 V
Thermal Resistance
2. Select input must be held HIGH or LOW, it must not float.
Symbol
V
CC
V
IN
V
IS
V
OUT
T
A
t
r
, t
f
Min
1.65
0
0
0
−55
0
0
−
Max
5.5
5.5
V
CC
V
CC
+125
10
5.0
350
Unit
V
V
V
V
°C
ns/V
q
JA
°C/W
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2
NLASB3157
DC ELECTRICAL CHARACTERISTICS
−
NLASB3157
Symbol
V
IH
V
IL
I
IN
I
OFF
R
ON
Parameter
HIGH Level
Input Voltage
LOW Level
Input Voltage
Input Leakage Current
OFF State Leakage
Current
Switch On Resistance
(Note 3)
0
v
V
IN
v
5.5 V
0
v
A, B
v
V
CC
V
IN
= 0 V, I
O
= 30 mA
V
IN
= 2.4 V, I
O
=
−30
mA
V
IN
= 4.5 V, I
O
=
−30
mA
V
IN
= 0 V, I
O
= 24 mA
V
IN
= 3 V, I
O
=
−24
mA
V
IN
= 0 V, I
O
= 8 mA
V
IN
= 2.3 V, I
O
=
−8
mA
V
IN
= 0 V, I
O
= 4 mA
V
IN
= 1.65 V, I
O
=
−4
mA
I
CC
Quiescent Supply
Current
All Channels ON or
OFF
Analog Signal Range
R
RANGE
On Resistance
Over Signal Range
(Note 3) (Note 7)
I
A
=
−30
mA, 0
v
V
Bn
v
V
CC
I
A
=
−24
mA, 0
v
V
Bn
v
V
CC
I
A
=
−8
mA, 0
v
V
Bn
v
V
CC
I
A
=
−4
mA, 0
v
V
Bn
v
V
CC
I
A
=
−30
mA, V
Bn
= 3.15
I
A
=
−24
mA, V
Bn
= 2.1
I
A
=
−8
mA, V
Bn
= 1.6
I
A
=
−4
mA, V
Bn
= 1.15
I
A
=
−30
mA, 0
v
V
Bn
v
V
CC
I
A
=
−24
mA, 0
v
V
Bn
v
V
CC
I
A
=
−8
mA, 0
v
V
Bn
v
V
CC
I
A
=
−4
mA, 0
v
V
Bn
v
V
CC
V
IN
= V
CC
or GND
I
OUT
= 0
V
CC
4.5
3.0
2.3
1.65
4.5
3.0
2.3
1.65
5.0
3.3
2.5
1.8
0.15
0.2
0.5
0.5
6.0
12
28
125
0
V
CC
0
V
CC
25
50
100
300
W
V
W
Test Conditions
V
CC
(V)
1.65−1.95
2.3−5.5
1.65−1.95
2.3−5.5
0−5.5
1.65−5.5
4.5
"0.05
"0.05
3.0
5.0
7.0
4.0
10
5.0
13
6.5
17
1.0
"0.1
"0.1
T
A
= +255C
Min
Typ
Max
T
A
=
−405C
to +855C
Min
0.75 V
CC
0.7 V
CC
0.25 V
CC
0.3 V
CC
"1
"1
7.0
12
15
9.0
20
12
30
20
50
10
Max
Unit
V
V
mA
mA
W
3.0
2.3
1.65
5.5
W
W
W
mA
DR
ON
On Resistance Match
Between Channels
(Note 3) (Note 4)
(Note 5)
On Resistance
Flatness (Note 3)
(Note 4) (Note 6)
R
flat
W
3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower
of the voltages on the two (A or B Ports).
4. Parameter is characterized but not tested in production.
5.
DR
ON
= R
ON
max
−
R
ON
min measured at identical V
CC
, temperature and voltage levels.
6. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.
7. Guaranteed by Design.
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3
NLASB3157
AC ELECTRICAL CHARACTERISTICS
−
NLASB3157
Symbol
t
PHL
t
PLH
Parameter
Propagation Delay
Bus to Bus (Note 9)
Test Conditions
V
I
= OPEN
V
CC
(V)
1.65−1.95
2.3−2.7
3.0−3.6
4.5−5.5
1.65−1.95
2.3−2.7
3.0−3.6
4.5−5.5
1.65−1.95
2.3−2.7
3.0−3.6
4.5−5.5
1.65−1.95
2.3−2.7
3.0−3.6
4.5−5.5
C
L
= 0.1 nF, V
GEN
= 0 V
R
GEN
= 0
W
R
L
= 50
W
f = 10 MHz
R
L
= 50
W
f = 10 MHz
R
L
= 50
W
R
L
= 600
W
0.5 V
P−P
f = 600 Hz to 20 kHz
5.0
3.3
1.65−5.5
1.65−5.5
1.65−5.5
5.0
7.0
3.0
−57
−54
250
0.011
23
13
6.9
5.2
12.5
7.0
5.0
3.5
7.0
3.5
2.5
1.7
3.0
2.0
1.5
0.8
0.5
0.5
0.5
0.5
T
A
= +255C
Min
Typ
Max
T
A
=
−405C
to +855C
Min
Max
1.2
0.8
0.3
24
14
7.6
5.7
13
7.5
5.3
3.8
ns
Unit
ns
Figure
Number
Figures
2, 3
t
PZL
t
PZH
Output Enable Time
Turn On Time
(A to B
n
)
Output Disable Time
Turn Off Time
(A Port to B Port)
Break Before Make
Time (Note 8)
V
I
= 2
V
CC
for t
PZL
V
I
= 0 V for t
PZH
Figures
2, 3
t
PLZ
t
PHZ
V
I
= 2
V
CC
for t
PLZ
V
I
= 0 V for t
PHZ
ns
Figures
2, 3
t
B−M
ns
Figure 4
Q
OIRR
Xtalk
BW
THD
Charge Injection
(Note 8)
Off Isolation (Note 10)
Crosstalk
−3
dB Bandwidth
Total Harmonic
Distortion (Note 8)
pC
dB
dB
MHz
%
Figure 5
Figure 6
Figure 7
Figure 10
CAPACITANCE
−
NLASB3157
(Note 11)
Symbol
C
IN
C
IO−B
C
IOA−ON
Parameter
Select Pin Input Capacitance
B Port Off Capacitance
A Port Capacitance when Switch is Enabled
Test Conditions
V
CC
= 0 V
V
CC
= 5.0 V
V
CC
= 5.0 V
Typ
2.3
6.5
18.5
Max
Unit
pF
pF
pF
Figure 8
Figure 9
Figure
Number
8. Guaranteed by Design.
9. This parameter is guaranteed by design but not tested. The bus switch contributes no propagation delay other than the RC delay of the On
Resistance of the switch and the 50 pF load capacitance, when driven by an ideal voltage source (zero output impedance).
10. Off Isolation = 20 log
10
[V
A
/V
Bn
].
11. T
A
= +25°C, f = 1 MHz, Capacitance is characterized but not tested in production.
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4
NLASB3157
APPENDIX A
DC ELECTRICAL EXTENDED AUTOMOTIVE TEMPERATURE RANGE CHARACTERISTICS
−
NLVASB3157
Symbol
V
IH
V
IL
I
IN
I
OFF
R
ON
Parameter
HIGH Level
Input Voltage
LOW Level
Input Voltage
Input Leakage Current
OFF State Leakage
Current
Switch On Resistance
(Note 12)
0
v
V
IN
v
5.5 V
0
v
A, B
v
V
CC
V
IN
= 0 V, I
O
= 30 mA
V
IN
= 2.4 V, I
O
=
−30
mA
V
IN
= 4.5 V, I
O
=
−30
mA
V
IN
= 0 V, I
O
= 24 mA
V
IN
= 3 V, I
O
=
−24
mA
V
IN
= 0 V, I
O
= 8 mA
V
IN
= 2.3 V, I
O
=
−8
mA
V
IN
= 0 V, I
O
= 4 mA
V
IN
= 1.65 V, I
O
=
−4
mA
I
CC
Quiescent Supply
Current
All Channels ON or
OFF
Analog Signal Range
R
RANGE
On Resistance
Over Signal Range
(Note 12) (Note 14)
I
A
=
−30
mA, 0
v
V
Bn
v
V
CC
I
A
=
−24
mA, 0
v
V
Bn
v
V
CC
I
A
=
−8
mA, 0
v
V
Bn
v
V
CC
I
A
=
−4
mA, 0
v
V
Bn
v
V
CC
V
IN
= V
CC
or GND
I
OUT
= 0
V
CC
4.5
3.0
2.3
1.65
0
V
CC
0
V
CC
25
50
100
300
V
W
Test Conditions
V
CC
(V)
1.65−1.95
2.3−5.5
1.65−1.95
2.3−5.5
0−5.5
1.65−5.5
4.5
"0.05
"0.05
3.0
5.0
7.0
4.0
10
5.0
13
6.5
17
1.0
"0.1
"0.1
T
A
= +255C
Min
Typ
Max
T
A
=
−555C
to +1255C
Min
0.75 V
CC
0.7 V
CC
0.25 V
CC
0.3 V
CC
"1
"1
8.5
13.0
15.0
11
20
12
30
20
50
10
mA
Max
Unit
V
V
mA
mA
W
3.0
2.3
1.65
5.5
12. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower
of the voltages on the two (A or B Ports).
13. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.
14. Guaranteed by Design.
* For
DR
ON
, R
FLAT
, Q, OIRR, Xtalk, BW, THD, and CIN see
−405C
to 855C section.
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