NSR05T40XV2
500 mA, 40 V Schottky
Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current that offers the most optimal
power dissipation in applications. They are housed in spacing saving
micro−packaging ideal for space constraint applications.
Features
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MARKING
DIAGRAM
YK
1
= Specific Device Code
Date Code
M
2
•
•
•
•
Low Forward Voltage Drop − 530 mV (Typ.) @ I
F
= 500 mA
Low Reverse Current − 3.0
mA
(Typ.) @ V
R
= 40 V
500 mA of Continuous Forward Current
ESD Rating: − Human Body Model: Class 3B
− Charged Device Model: Class IV
•
High Switching Speed
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
2
1
SOD−523
CASE 502
YK
M
•
•
•
•
•
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
1
CATHODE
2
ANODE
ORDERING INFORMATION
Device
Package
Shipping†
8000 / Tape &
Reel
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current (DC)
Forward Surge Current
(60 Hz @ 1 cycle)
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
ESD Rating:
Human Body Model
Charged Device Model
Symbol
V
R
I
F
I
FSM
I
FRM
ESD
Value
40
500
3.0
1.5
>8
>1
Unit
V
mA
A
A
kV
NSR05T40XV2T5G SOD−523
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2017
1
February, 2017 − Rev. 1
Publication Order Number:
NSR05T40XV2/D
NSR05T40XV2
TYPICAL CHARACTERISTICS
1000
I
F
, FORWARD CURRENT (mA)
I
r
, REVERSE CURRENT (mA)
10000
1000
150°C
125°C
75°C
100
150°C
10
125°C
75°C
25°C
−25°C
0.1
0
0.1
0.2
0.3
−55°C
0.4
0.5
0.6
0.7
100
10
1
0.1
0.01
0.001
0.0001
−55°C
0
5
10
15
20
25
30
35
40
25°C
1
−25°C
0.00001
V
R
, REVERSE VOLTAGE (V)
V
F
, FORWARD VOLTAGE (V)
Figure 5. Forward Voltage
Figure 6. Leakage Current
P
F
, AVERAGE FORWARD POWER (mW)
100
10
1
0.1
0.01
1.0
0.8
0.5
0.2
0.1
P
R
, AVERAGE REVERSE POWER (mW)
1000
100
1.0
0.8
0.5
0.2
0.1
10
1
0.1
0.01
0.001
0
5
10
15
20
25
30
35
40
V
R
, REVERSE VOLTAGE (V)
0.001
0
50
100 150 200 250 300 350 400 450 500
I
F
, FORWARD CURRENT (mA)
Figure 7. Average Forward Power Dissipation
Figure 8. Average Reverse Power Dissipation
100
C
T
, TOTAL CAPACITANCE (pF)
90
80
70
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
V
R
, REVERSE VOLTAGE (V)
f = 1.0 MHz
I
FSM
, FORWARD SURGE MAX CURRENT (A)
25
Based on square wave currents
T
J
= 25°C prior to surge
20
15
10
5
0
0.001
0.01
0.1
1
10
100
1000
t
P
, PULSE ON TIME (ms)
Figure 9. Total Capacitance
Figure 10. Forward Surge Current
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4
NSR05T40XV2
PACKAGE DIMENSIONS
SOD−523
CASE 502
ISSUE E
−X−
D
−Y−
E
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-
TRUSIONS, OR GATE BURRS.
DIM
A
b
c
D
E
H
E
L
L2
MILLIMETERS
MIN
NOM
MAX
0.50
0.60
0.70
0.25
0.30
0.35
0.07
0.14
0.20
1.10
1.20
1.30
0.70
0.80
0.90
1.50
1.60
1.70
0.30 REF
0.15
0.20
0.25
b
0.08
1
M
2
X Y
TOP VIEW
A
c
H
E
SIDE VIEW
2X
2X
RECOMMENDED
SOLDERING FOOTPRINT*
1.80
2X
L
0.48
0.40
PACKAGE
OUTLINE
2X
L2
DIMENSION: MILLIMETERS
BOTTOM VIEW
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSR05T40XV2/D
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