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FGH60N60UFDTU-F085

产品类别分立半导体    晶体管   
文件大小627KB,共11页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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FGH60N60UFDTU-F085规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
包装说明FLANGE MOUNT, R-PSFM-T3
制造商包装代码340CK
Reach Compliance Codenot_compliant
其他特性RC-IGBT
外壳连接COLLECTOR
最大集电极电流 (IC)120 A
集电极-发射极最大电压600 V
配置SINGLE WITH BUILT-IN DIODE
最大降落时间(tf)80 ns
门极发射器阈值电压最大值6.5 V
门极-发射极最大电压20 V
JEDEC-95代码TO-247AB
JESD-30 代码R-PSFM-T3
JESD-609代码e3
元件数量1
端子数量3
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)298 W
参考标准AEC-Q101
表面贴装NO
端子面层Tin (Sn)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用POWER CONTROL
晶体管元件材料SILICON
标称断开时间 (toff)218 ns
标称接通时间 (ton)83 ns
VCEsat-Max2.9 V

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
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