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NSS1C200MZ4T1G

产品类别分立半导体    晶体管   
文件大小103KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NSS1C200MZ4T1G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
包装说明MINIATURE, 318E-04, TO-261, 4 PIN
针数4
制造商包装代码0.0318
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time10 weeks
外壳连接COLLECTOR
最大集电极电流 (IC)2 A
集电极-发射极最大电压100 V
配置SINGLE
最小直流电流增益 (hFE)50
JEDEC-95代码TO-261AA
JESD-30 代码R-PDSO-G4
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量4
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
极性/信道类型PNP
表面贴装YES
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)120 MHz

文档预览

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ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
NSS1C200MZ4,
NSV1C200MZ4
100 V, 2.0 A, Low V
CE(sat)
PNP Transistor
http://onsemi.com
−100
VOLTS, 2.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
COLLECTOR
2,4
1
BASE
3
EMITTER
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Continuous
Collector Current
Continuous
Collector Current
Peak
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
I
CM
Symbol
P
D
(Note 1)
Max
−100
−140
−7.0
1.0
2.0
3.0
Unit
Vdc
Vdc
Vdc
A
A
A
A
Y
W
1C200
G
SOT−223
CASE 318E
STYLE 1
MARKING
DIAGRAM
AYW
1C200G
1
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Max
800
6.5
155
Unit
mW
mW/°C
°C/W
PIN ASSIGNMENT
4
C
R
qJA
(Note 1)
P
D
(Note 2)
B
1
C
2
E
3
2.0
15.6
64
−55
to
+150
W
mW/°C
°C/W
°C
Top View Pinout
R
qJA
(Note 2)
T
J
, T
stg
ORDERING INFORMATION
Device
NSS1C200MZ4T1G
NSV1C200MZ4T1G
NSS1C200MZ4T3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
1000/
Tape & Reel
4000/
Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 7.6 mm
2
, 1 oz. copper traces.
2. FR−4 @ 645 mm
2
, 1 oz. copper traces.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C200MZ4/D
©
Semiconductor Components Industries, LLC, 2013
March, 2013− Rev. 5
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