There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
v
150°C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
T
A
PD, POWER DISSIPATION (WATTS)
T
C
3.0
60
2.0
40
T
A
1.0
20
T
C
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 3. Power Derating
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3
MJF44H11 (NPN), MJF45H11 (PNP)
1000
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
100
V
CE
= 4 V
V
CE
= 4 V
100
1V
T
J
= 25°C
V
CE
= 1 V
T
J
= 25°C
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 4. MJF44H11 DC Current Gain
Figure 5. MJF45H11 DC Current Gain
1000
1000
T
J
= 125°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
T
J
= 125°C
25°C
100
- 40°C
25°C
- 40°C
100
V
CE
= 1 V
V
CE
= 1 V
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 6. MJF44H11 Current Gain
versus Temperature
Figure 7. MJF45H11 Current Gain
versus Temperature
1.2
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
1
0.8
0.6
0.4
0.2
0
0.1
I
C
/I
B
= 10
T
J
= 25°C
V
CE(sat)
V
BE(sat)
1.2
1
0.8
0.6
0.4
0.2
0
0.1
I
C
/I
B
= 10
T
J
= 25°C
V
CE(sat)
V
BE(sat)
1
I
C
, COLLECTOR CURRENT (AMPS)
10
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 8. MJF44H11 On−Voltages
Figure 9. MJF45H11 On−Voltages
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4
MJF44H11 (NPN), MJF45H11 (PNP)
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE J
−T−
F
Q
A
1 2 3
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
−B−
C
S
U
H
K
−Y−
G
N
L
D
3 PL
M
J
R
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
0.25 (0.010)
B
M
Y
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
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