MJB44H11 (NPN),
NJVMJB44H11 (NPN),
MJB45H11 (PNP),
NJVMJB45H11 (PNP)
Complementary
Power Transistors
D
2
PAK for Surface Mount
Complementary power transistors are for general purpose power
amplification and switching such as output or driver stages in
applications such as switching regulators, converters and power
amplifiers.
Features
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SILICON POWER
TRANSISTORS
10 AMPERES,
80 VOLTS, 50 WATTS
MARKING
DIAGRAM
•
Low Collector−Emitter Saturation Voltage
−
•
•
•
•
•
•
V
CE(sat)
= 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
Pb−Free Packages are Available
D
2
PAK
CASE 418B
STYLE 1
B4xH11G
AYWW
x
A
Y
WW
G
= 4 or 5
= Assembly Location
= Year
= Work Week
= Pb−Free Package
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
−
Peak
Symbol
V
CEO
V
EB
I
C
P
D
Value
80
5
10
20
50
0.4
2.0
0.016
−55
to 150
Unit
Vdc
Vdc
Adc
ORDERING INFORMATION
Device
MJB44H11G
MJB44H11T4G
NJVMJB44H11T4G
W
W/°C
W
W/°C
°C
MJB45H11G
MJB45H11T4G
NJVMJB45H11T4G
Package
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
D
2
PAK
(Pb−Free)
Shipping
†
50 Units/Rail
800/Tape & Reel
800/Tape & Reel
50 Units/Rail
800/Tape & Reel
800/Tape & Reel
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
P
D
T
J
, T
stg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
2.5
75
Unit
°C/W
°C/W
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
Publication Order Number:
MJB44H11/D
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 5
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 30 mA, I
B
= 0)
Collector Cutoff Current (V
CE
= Rated V
CEO
, V
BE
= 0)
Emitter Cutoff Current (V
EB
= 5 Vdc)
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage (I
C
= 8 Adc, I
B
= 0.4 Adc)
Base−Emitter Saturation Voltage (I
C
= 8 Adc, I
B
= 0.8 Adc)
DC Current Gain (V
CE
= 1 Vdc, I
C
= 2 Adc)
DC Current Gain (V
CE
= 1 Vdc, I
C
= 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance (V
CB
= 10 Vdc, f
test
= 1 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
C
cb
pF
−
−
−
−
130
230
50
40
−
−
MHz
−
−
V
CE(sat)
V
BE(sat)
h
FE
−
−
60
40
−
−
−
−
1.0
1.5
−
−
Vdc
Vdc
−
V
CEO(sus)
I
CES
I
EBO
80
−
−
−
−
−
−
10
50
Vdc
mA
mA
Symbol
Min
Typ
Max
Unit
Gain Bandwidth Product (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 20 MHz)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
SWITCHING TIMES
Delay and Rise Times(I
C
= 5 Adc, I
B1
= 0.5 Adc)
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
MJB44H11, NJVMJB44H11
MJB45H11, NJVMJB45H11
f
T
t
d
+ t
r
ns
−
−
−
−
−
−
300
135
500
500
140
100
−
−
ns
−
−
ns
−
−
Storage Time(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc)
t
s
Fall Time(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc)
t
f
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.02
0.05
0.1
0.2
0.5
1.0
Z
qJC(t)
= r(t) R
qJC
R
qJC
= 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
2.0
t, TIME (ms)
5.0
10
20
50
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200
500
1.0 k
Figure 1. Thermal Response
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2
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
100
IC, COLLECTOR CURRENT (AMPS)
50
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
1.0
5.0 7.0 10
2.0 3.0
20 30
50 70 100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 ms
100
ms
10
ms
T
C
≤
70° C
DUTY CYCLE
≤
50%
dc
1.0
ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
150°C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
T
A
PD, POWER DISSIPATION (WATTS)
T
C
3.0
60
2.0
40
T
C
1.0
20
T
A
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 3. Power Derating
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3
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
1000
1000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
100
V
CE
= 4 V
V
CE
= 4 V
100
1V
T
J
= 25°C
V
CE
= 1 V
T
J
= 25°C
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 4. MJB44H11 DC Current Gain
Figure 5. MJB45H11 DC Current Gain
1000
1000
T
J
= 125°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
T
J
= 125°C
25°C
100
- 40°C
25°C
- 40°C
100
V
CE
= 1 V
V
CE
= 1 V
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
10
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 6. MJB44H11 Current Gain
versus Temperature
Figure 7. MJB45H11 Current Gain
versus Temperature
1.2
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
1
0.8
0.6
0.4
0.2
0
0.1
I
C
/I
B
= 10
T
J
= 25°C
V
CE(sat)
V
BE(sat)
1.2
1
0.8
0.6
0.4
0.2
0
0.1
I
C
/I
B
= 10
T
J
= 25°C
V
CE(sat)
V
BE(sat)
1
I
C
, COLLECTOR CURRENT (AMPS)
10
1
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 8. MJB44H11 On−Voltages
Figure 9. MJB45H11 On−Voltages
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4
MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP)
PACKAGE DIMENSIONS
D
2
PAK 3
CASE 418B−04
ISSUE K
C
E
−B−
4
V
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
1
2
3
S
A
−T−
SEATING
PLANE
K
G
D
3 PL
M
J
H
T B
M
W
0.13 (0.005)
VARIABLE
CONFIGURATION
ZONE
L
M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
R
N
U
L
P
L
M
M
F
VIEW W−W
1
F
VIEW W−W
2
F
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
3.504
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
2X
2X
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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