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FGH20N60UFDTU

产品描述IGBT, 600V, 20A, Field Stop, 450-TUBE
产品类别分立半导体    晶体管   
文件大小473KB,共10页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准  
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FGH20N60UFDTU概述

IGBT, 600V, 20A, Field Stop, 450-TUBE

FGH20N60UFDTU规格参数

参数名称属性值
Brand Nameonsemi
是否无铅不含铅
Objectid4001116596
包装说明ROHS COMPLIANT PACKAGE-3
制造商包装代码340CK
Reach Compliance Codenot_compliant
ECCN代码EAR99
Samacsys DescriptionIGBT Field Stop 600 V 40 A 165 W Through Hole TO-247-3
Samacsys Manufactureronsemi
Samacsys Modified On2024-06-27 04:26:26
其他特性LOW CONDUCTION LOSS
外壳连接COLLECTOR
最大集电极电流 (IC)40 A
集电极-发射极最大电压600 V
配置SINGLE WITH BUILT-IN DIODE
最大降落时间(tf)64 ns
门极发射器阈值电压最大值6.5 V
门极-发射极最大电压20 V
JEDEC-95代码TO-247AB
JESD-30 代码R-PSFM-T3
JESD-609代码e3
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大功率耗散 (Abs)165 W
认证状态Not Qualified
表面贴装NO
端子面层Matte Tin (Sn) - annealed
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用POWER CONTROL
晶体管元件材料SILICON
标称断开时间 (toff)155 ns
标称接通时间 (ton)29 ns

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