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NLAS3899BMNTBG

产品描述DPDT
产品类别模拟混合信号IC    信号电路   
文件大小132KB,共10页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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NLAS3899BMNTBG概述

DPDT

NLAS3899BMNTBG规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码QFN
包装说明WQFN-16
针数16
制造商包装代码488AP
Reach Compliance Codecompliant
Factory Lead Time1 week
Samacsys DescriptionON SEMICONDUCTOR - NLAS3899BMNTBG - ANALOGUE SWITCH, DUAL, DPDT, WQFN-16
模拟集成电路 - 其他类型DPDT
JESD-30 代码R-XQCC-N16
JESD-609代码e4
长度2.6 mm
湿度敏感等级1
信道数量2
功能数量2
端子数量16
标称断态隔离度67 dB
通态电阻匹配规范0.8 Ω
最大通态电阻 (Ron)3 Ω
最高工作温度85 °C
最低工作温度-40 °C
输出SEPARATE OUTPUT
封装主体材料UNSPECIFIED
封装代码VQCCN
封装等效代码LCC16,.07X.1,16
封装形状RECTANGULAR
封装形式CHIP CARRIER, VERY THIN PROFILE
峰值回流温度(摄氏度)NOT SPECIFIED
电源1.8/4 V
认证状态Not Qualified
座面最大高度0.8 mm
最大供电电压 (Vsup)4.3 V
最小供电电压 (Vsup)1.65 V
标称供电电压 (Vsup)3 V
表面贴装YES
最长断开时间30 ns
最长接通时间40 ns
切换BREAK-BEFORE-MAKE
温度等级INDUSTRIAL
端子面层Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式NO LEAD
端子节距0.4 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度1.8 mm

文档预览

下载PDF文档
NLAS3899B
Dual DPDT Low R
ON
, Low
Capacitance Switch
The NLAS3899B is a dual DPDT analog switch designed for low
power audio and dual SIM card applications. The low R
ON
of 3.0
W
(typical) is ideal for routing audio signals to or from a moderately high
impedance load. In addition, the low C
ON
of 20 pF (typical) gives the
NLAS3899B a high bandwidth of 280 MHz, perfect for dual SIM card
applications.
Features
http://onsemi.com
MARKING
DIAGRAMS
16
1
1
QFN16
CASE 485AE
Typical Applications
Cell Phone Speaker/Microphone Switching
Ringtone−Chip/Amplifier Switching
Dual SIM Card Data Switching
Four Unbalanced (Single−Ended) Switches
Important Information
XX
A
M
L
Y
W
G
= Specific Device Code
= Assembly Location
= Date Code/Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
ESD Protection:
(Note: Microdot may be in either location)
COMA NOA Vcc NCD
16
15
14
13
Human Body Model (HBM) 1000 V
All Pins
Human Body Model (HBM)
5000 V
I/O to GND
Continuous Current Rating Through each Switch
±300
mA
Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
Package:
1.8 x 2.6 x 0.75 mm WQFN16 Pb−Free
3.0 x 3.0 x 0.9 mm QFN16 Pb−Free
NCA
A−B IN
NOB
COMB
1
2
3
4
5
6
7
NCB GND NOCCOMC
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
©
Semiconductor Components Industries, LLC, 2012
August, 2012
Rev. 1
1
Publication Order Number:
NLAS3899B/D
ÇÇÇ
ÇÇÇ
12
11
10
9
8
1.65 to 4.3 V V
CC
Function Directly from Li−Ion Battery
Low ON Resistance (3.0
W
Typical Across V
CC
)
Low C
ON
(20 pF Typical)
Bandwidth 280 MHz
Maximum Breakdown Voltage: 5.5 V
Low Static Power
Interfaces with 1.8 V Chipset
These are Pb−Free Devices
1
WQFN16
CASE 488AP
1
16
ÇÇ
ÇÇ
Single Supply Operation
AAMG
G
NLAS
3899
ALYW
COMD
NOD
C−D IN
NCC

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