NVLJD4007NZ
Small Signal MOSFET
30 V, 245 mA, Dual, N−Channel, Gate ESD
Protection, 2x2 WDFN Package
Features
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V
(BR)DSS
30 V
R
DS(on)
Typ @ V
GS
1.4
W
@ 4.5 V
2.3
W
@ 2.5 V
D (6)
I
D
MAX
(Note 1)
245 mA
D (4)
•
•
•
•
•
•
Optimized Layout for Excellent High Speed Signal Integrity
Low Gate Charge for Fast Switching
Small 2 x 2 mm Footprint
ESD Protected Gate
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady State = 25°C
Steady State = 25°C
t
P
v
10
ms
Symbol
V
DSS
V
GS
I
D
P
D
I
DM
T
J
,
T
STG
I
SD
T
L
Value
30
"10
245
755
1.2
−55
to
150
245
260
Unit
V
V
mA
mW
A
°C
mA
°C
G (2)
G (5)
S (1)
N−Channel
S (3)
N−Channel
MARKING
DIAGRAM
WDFN6
CASE 506AN
1
2
3
JGG
G
6
5
4
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
1
JG = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
PIN CONNECTIONS
S1
G1
S2
D1
1
2
D2
3
(Top View)
4
D2
6
5
D1
G2
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 1)
Symbol
R
qJA
Max
166
Unit
°C/W
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
Device
NVLJD4007NZTAG
NVLJD4007NZTBG
Package
WDFN6
(Pb−Free)
WDFN6
(Pb−Free)
Shipping
†
3000/Tape &
Reel
3000/Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
May, 2013
−
Rev. 0
1
Publication Order Number:
NVLJD4007NZ/D
NVLJD4007NZ
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
ISS
C
OSS
C
RSS
Q
g
Q
gs
Q
gd
V
GP
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
V
GS
= 0 V, I
S
= 125 mA
V
GS
= 4.5 V, V
DS
= 24 V,
I
D
= 125 mA, R
G
= 10
W
V
DS
= 24 V, I
D
= 100 mA,
V
GS
= 4.5 V
V
DS
= 5.0 V, f = 1 MHz,
V
GS
= 0 V
V
DS
= V
GS
, I
D
= 100
mA
Reference to 25°C, I
D
= 100
mA
V
GS
= 4.5 V, I
D
= 125 mA
V
GS
= 2.5 V, I
D
= 125 mA
Forward Transconductance
CAPACITANCES & GATE CHARGE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
0.79
0.9
V
9
41
96
72
ns
ns
12.2
10
3.3
0.75
0.20
0.20
1.57
V
nC
20
15
6.0
pF
V
DS
= 3 V, I
D
= 125 mA
0.5
1.0
−2.5
1.4
2.3
80
7.0
7.5
1.5
V
mV/°C
W
mS
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
DSS
I
GSS
I
GSS
I
GSS
V
GS
= 0 V, I
D
= 100
mA
Reference to 25°C, I
D
= 100
mA
V
GS
= 0 V, V
DS
= 30 V
V
GS
= 0 V, V
DS
= 20 V,
T = 85
°C
V
DS
= 0 V, V
GS
=
±10
V
V
DS
= 0 V, V
GS
=
±5
V
V
DS
= 0 V, V
GS
=
±5
V
T = 85
°C
30
27
1.0
1.0
±25
±1.0
±1.0
V
mV/°C
mA
mA
mA
mA
mA
Symbol
Test Condition
Min
Typ
Max
Unit
2. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
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NVLJD4007NZ
TYPICAL PERFORMANCE CURVES
1.2
1.1
I
D,
DRAIN CURRENT (A)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
T
J
= 150°C
T
J
=
−55°C
V
GS
= 10 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
2.8 V
2.6 V
2.4 V
2.2 V
2.0 V
1.8 V
I
D,
DRAIN CURRENT (A)
V
DS
= 5 V
T
J
= 25°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0 4.5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS,
GATE VOLTAGE (V)
T
J
= 25°C
I
D
= 125 mA
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
Figure 2. Transfer Characteristics
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
V
GS
= 2.5 V
V
GS
= 4.5 V
T
J
= 125°C
T
J
= 25°C
T
J
=
−55°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
I
D,
DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
1000
I
D
= 125 mA
V
GS
= 4.5 V
I
DSS
, LEAKAGE (nA)
100
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
T
J
= 150°C
T
J
= 125°C
10
1
T
J
= 85°C
−25
0
25
50
75
100
125
150
0.1
0
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVLJD4007NZ
TYPICAL PERFORMANCE CURVES
25
20
15
10
5
C
rss
0
0
5
10
15
20
25
30
C
iss
C
oss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0.1
Q
GS
Q
GD
V
DS
= 24 V
I
D
= 100 mA
T
J
= 25°C
0.7
V
DS
V
GS
30
25
20
15
10
5
0
0.8
Q
T
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0.2
0.3
0.4
0.5
0.6
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
I
S
, SOURCE CURRENT (A)
1000
V
GS
= 4.5 V
V
DD
= 24 V
I
D
= 125 mA
t
d(off)
t
f
t
r
t
d(on)
t, TIME (ns)
100
T
J
= 85°C
T
J
= 125°C
T
J
= 25°C
1
10
T
J
= 150°C
T
J
=
−55°C
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
10
V
GS
≤
10 V
Single Pulse
T
C
= 25°C
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
1
10
ms
100
ms
1 ms
10 ms
dc
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
100
0.1
0.01
0.001
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
NVLJD4007NZ
TYPICAL PERFORMANCE CURVES
R(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE
1000
R
qJA
Steady State = 166°C/W
100 Duty Cycle = 0.5
0.20
0.10
0.05
0.02
Single Pulse
1
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
t, TIME (s)
1E−01
1E+00
1E+01
1E+02
1E+03
10
Figure 12. Thermal Impedance (Junction−to−Ambient)
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