MJE350G
Plastic Medium-Power
PNP Silicon Transistor
This device is designed for use in line−operated applications such as
low power, line−operated series pass and switching regulators
requiring PNP capability.
Features
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•
•
•
•
High Collector−Emitter Sustaining Voltage
Excellent DC Current Gain
Complement to MJE340
These Devices are Pb−Free and are RoHS Compliant*
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS, 20 WATTS
Unit
Vdc
Vdc
mAdc
W
mW/_C
_C
3
BASE
1
EMITTER
COLLECTOR
2, 4
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
EB
I
C
P
D
Value
300
3.0
500
20
0.16
–65 to +150
T
J
, T
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
6.25
Unit
_C/W
1 2
3
TO−225
CASE 77−09
STYLE 1
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 300 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 50 mAdc, V
CE
= 10 Vdc)
h
FE
30
240
−
V
CEO(sus)
I
CBO
I
EBO
300
−
−
−
100
100
Vdc
mAdc
mAdc
Y
WW
JE350
G
YWW
JE350G
Symbol
Min
Max
Unit
MARKING DIAGRAM
= Year
= Work Week
= Device Code
= Pb−Free Package
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
MJE350G
Package
TO−225
(Pb−Free)
Shipping
500 Units/Box
©
Semiconductor Components Industries, LLC, 2013
February, 2017
−
Rev. 18
1
Publication Order Number:
MJE350/D
MJE350G
200
T
J
= 150°C
25°C
V, VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE
@ V
CE
= 10 V
hFE , DC CURRENT GAIN
100
70
50
30
20
- 55°C
0.4
I
C
/I
B
= 10
V
CE
= 2.0 V
V
CC
= 10 V
50 70 100
200
20 30
I
C
, COLLECTOR CURRENT (mA)
300
500
0.2
V
CE(sat)
0
5.0 7.0
10
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
I
C
/I
B
= 5.0
200 300
500
10
5.0 7.0 10
Figure 1. DC Current Gain
Figure 2. “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
IC, COLLECTOR CURRENT (mA)
1000
700
500
300
200
100
70
50
30
20
10
20
1.0 ms
dc
+ 1.2
100
ms
+ 0.8
+ 0.4
0
- 0.4
- 0.8
- 1.2
- 1.6
- 2.0
- 2.4
- 2.8
5.0 7.0
10
q
VB
for V
BE
- 55°C to + 25°C
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
200 300
500
+ 25°C to + 150°C
*q
VC
for V
CE(sat)
- 55°C to + 25°C
*APPLIES FOR I
C
/I
B
< h
FE/4
+ 100°C to + 150°C
+ 25°C to + 100°C
500
ms
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
SECOND BREAKDOWN LIMITED
50
100
200
300 400
30
70
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Active−Region Safe Operating Area
Figure 4. Temperature Coefficients
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
20
PD, POWER DISSIPATION (WATTS)
16
12
8.0
4.0
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
160
Figure 5. Power Derating
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2
MJE350G
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE AD
4
1 2
3
FRONT VIEW
3 2
1
BACK VIEW
E
A1
Q
A
PIN 4
BACKSIDE TAB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
SCALE 1:1
P
1
2
3
D
L1
L
STYLE 1:
PIN 1. EMITTER
2., 4. COLLECTOR
3. BASE
2X
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
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3
MJE350/D
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