MUN5213DW1,
NSBC144EDXV6,
NSBC144EDP6
Dual NPN Bias Resistor
Transistors
R1 = 47 kW, R2 = 47 kW
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PIN CONNECTIONS
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
(2)
R
2
(1)
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable*
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
40
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B−02
1
7C MG
G
SOT−563
CASE 463A
7C MG
1
SOT−963
CASE 527AD
DM
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
MUN5213DW1T1G,
SMUN5213DW1T1G*
MUN5213DW1T3G,
NSVMUN5213DW1T3G*
NSBC144EDXV6T1G
NSBC144EDXV6T5G
NSBC144EDP6T5G
Package
SOT−363
SOT−363
SOT−563
SOT−563
SOT−963
Shipping
†
3,000 / Tape & Reel
10,000 / Tape & Reel
4,000 / Tape & Reel
8,000 / Tape & Reel
8,000 / Tape & Reel
7C/D
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2017
June, 2017
−
Rev. 3
19
Publication Order Number:
DTC144ED/D
MUN5213DW1, NSBC144EDXV6, NSBC144EDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5213DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
(Note 13)
T
A
= 25°C
(Note 14)
Derate above 25°C
(Note 13)
(Note 14)
Thermal Resistance,
Junction to Ambient
(Note 13)
(Note 14)
P
D
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
MUN5213DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 15)
Total Device Dissipation
(Note 13)
T
A
= 25°C
(Note 14)
Derate above 25°C
(Note 13)
(Note 14)
Thermal Resistance,
Junction to Ambient
(Note 14)
Thermal Resistance,
Junction to Lead (Note 13)
(Note 14)
Junction and Storage Temperature Range
NSBC144EDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
(Note 13)
T
A
= 25°C
Derate above 25°C
(Note 13)
Thermal Resistance,
Junction to Ambient
(Note 13)
P
D
357
2.9
350
mW
mW/°C
°C/W
(Note 13)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/°C
°C/W
R
qJA
R
qJL
°C/W
T
J
, T
stg
°C
R
qJA
NSBC144EDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 15)
Total Device Dissipation
(Note 13)
T
A
= 25°C
Derate above 25°C
(Note 13)
Thermal Resistance,
Junction to Ambient
(Note 13)
P
D
500
4.0
250
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
P
D
Junction and Storage Temperature Range
NSBC144EDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
(Note 16)
T
A
= 25°C
(Note 17)
Derate above 25°C
(Note 16)
(Note 17)
Thermal Resistance,
Junction to Ambient
(Note 17)
(Note 16)
231
269
1.9
2.2
540
464
MW
mW/°C
°C/W
R
qJA
NSBC144EDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 15)
Total Device Dissipation
(Note 16)
T
A
= 25°C
(Note 17)
Derate above 25°C
(Note 16)
(Note 17)
Thermal Resistance,
Junction to Ambient
(Note 17)
(Note 16)
P
D
339
408
2.7
3.3
369
306
−55
to +150
MW
mW/°C
°C/W
R
qJA
Junction and Storage Temperature Range
13. FR−4 @ Minimum Pad.
14. FR−4 @ 1.0
×
1.0 Inch Pad.
15. Both junction heated values assume total power is sum of two equally powered channels.
16. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
17. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
T
J
, T
stg
°C
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20
MUN5213DW1, NSBC144EDXV6, NSBC144EDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 18)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 18)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 18)
(I
C
= 10 mA, I
B
= 0.3 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 3.0 mA)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
18. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
h
FE
V
CE(sat)
V
i(off)
V
i(on)
V
OL
V
OH
R1
R
1
/R
2
80
−
−
−
−
4.9
32.9
0.8
140
−
1.2
1.9
−
−
47
1.0
−
0.25
−
−
0.2
−
61.1
1.2
V
Vdc
Vdc
Vdc
Vdc
kW
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
0.1
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
×
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (°C)
Figure 33. Derating Curve
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21
MUN5213DW1, NSBC144EDXV6, NSBC144EDP6
TYPICAL CHARACTERISTICS
MUN5213DW1, NSBC144EDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
10
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
350
300
250
200
150
100
50
0
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
V
CE
= 2 V
125°C
T
A
= 150°C
85°C
25°C
−40°C
−55°C
1
T
A
=
−25°C
25°C
75°C
0.1
0.01
0
10
10
20
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 34. V
CE(sat)
vs. I
C
Figure 35. DC Current Gain
350
300
250
200
V
CE
= 10 V
125°C
C
ob
, OUTPUT CAPACITANCE (pF)
T
A
= 150°C
85°C
25°C
−40°C
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
150
100
50
0
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
−55°C
Figure 36. DC Current Gain
Figure 37. Output Capacitance
100
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
75°C
25°C
T
A
=
−25°C
100
V
O
= 0.2 V
V
in
, INPUT VOLTAGE (V)
T
A
=
−25°C
10
25°C
75°C
1
0.01
V
O
= 5 V
0
2
4
6
V
in
, INPUT VOLTAGE (V)
8
10
0.001
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 38. Output Current vs. Input Voltage
Figure 39. Input Voltage vs. Output Current
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22
MUN5213DW1, NSBC144EDXV6, NSBC144EDP6
TYPICAL CHARACTERISTICS
NSBC144EDP6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
10
1000
V
CE
= 10 V
25°C
1
−55°C
150°C
0.1
h
FE
, DC CURRENT GAIN
25°C
150°C
I
C
/I
B
= 10
100
−55°C
10
0.01
0
30
20
40
10
I
C
, COLLECTOR CURRENT (mA)
50
1
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 40. V
CE(sat)
vs. I
C
Figure 41. DC Current Gain
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
V
R
, REVERSE VOLTAGE (V)
50
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
10
1
0.1
0.01
150°C
−55°C
25°C
V
O
= 5 V
0
4
12
16
20
8
V
in
, INPUT VOLTAGE (V)
24
28
0.001
Figure 42. Output Capacitance
Figure 43. Output Current vs. Input Voltage
100
V
in
, INPUT VOLTAGE (V)
25°C
10
−55°C
1
150°C
V
O
= 0.2 V
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
50
Figure 44. Input Voltage vs. Output Current
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