BAT54SWT1G,
NSVBAT54SWT1G
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
www.onsemi.com
•
Extremely Fast Switching Speed
•
Low Forward Voltage − 0.35 Volts (Typ) @ I
F
= 10 mAdc
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Forward Current (DC)
Non−Repetitive Peak Forward Current
t
p
< 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
Junction Temperature
Storage Temperature Range
Electrostatic Discharge
Symbol
V
R
P
F
200
1.6
I
F
I
FSM
600
I
FRM
300
T
J
T
stg
ESD
−55 to 125
−55 to +150
HM < 8000
MM < 400
°C
°C
V
V
mA
200 Max
mW
mW/°C
mA
mA
Value
30
Unit
V
30 VOLT
DUAL SERIES SCHOTTKY
BARRIER DIODES
SOT−323
CASE 419
STYLE 9
1
ANODE
2
CATHODE
3
CATHODE/ANODE
MARKING DIAGRAM
B8M
G
G
1
B8
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
BAT54SWT1G
NSVBAT54SWT1G
Package
SOT−323
(Pb−Free)
SOT−323
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
June, 2016 − Rev. 11
Publication Order Number:
BAT54SWT1/D
BAT54SWT1G, NSVBAT54SWT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mA)
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
Reverse Leakage
(V
R
= 25 V)
Forward Voltage
(I
F
= 0.1 mAdc)
Forward Voltage
(I
F
= 30 mAdc)
Forward Voltage
(I
F
= 100 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
Forward Voltage
(I
F
= 1.0 mAdc)
Forward Voltage
(I
F
= 10 mAdc)
Symbol
V
(BR)R
30
C
T
−
I
R
−
V
F
−
V
F
−
V
F
−
t
rr
−
V
F
−
V
F
−
0.35
0.40
0.29
0.32
Vdc
−
5.0
Vdc
0.52
0.8
ns
0.41
0.5
Vdc
0.22
0.24
Vdc
0.5
2.0
Vdc
7.6
10
mAdc
−
−
pF
Min
Typ
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820
W
+10 V
2k
100
mH
0.1
mF
DUT
50
W
OUTPUT
PULSE
GENERATOR
50
W
INPUT
SAMPLING
OSCILLOSCOPE
90%
V
R
INPUT SIGNAL
I
R
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measured
at i
R(REC)
= 1 mA)
I
F
0.1
mF
t
r
10%
t
p
T
I
F
t
rr
T
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
BAT54SWT1G, NSVBAT54SWT1G
PACKAGE DIMENSIONS
SOT−323 (SC−70)
CASE 419−04
ISSUE N
D
e1
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
H
E
1
2
E
b
e
DIM
A
A1
A2
b
c
D
E
e
e1
L
H
E
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
A
0.05 (0.002)
A2
L
c
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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For additional information, please contact your local
Sales Representative
www.onsemi.com
4
BAT54SWT1/D
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