MMBT3904TT1G,
SMMBT3904TT1G
General Purpose Transistors
NPN Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−416/SC−75 package which is
designed for low power surface mount applications.
Features
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•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
60
6.0
200
Unit
Vdc
Vdc
Vdc
mAdc
SOT−416/SC−75
CASE 463
STYLE 1
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
P
D
200
1.6
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
400
−65 to +150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
Max
Unit
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR−4 Board (Note 1) @T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
Total Device Dissipation,
FR−4 Board (Note 2) @T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
Junction and Storage Temperature Range
MARKING DIAGRAM
AM M
G
G
1
AM = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0
×
1.0 Inch Pad
ORDERING INFORMATION
Device
MMBT3904TT1G
Package
SOT−416
(Pb−Free)
Shipping
†
3,000 Tape & Reel
3,000 Tape & Reel
SMMBT3904TT1G SOT−416
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMBT3904TT1/D
©
Semiconductor Components Industries, LLC, 2011
1
June, 2017 − Rev. 6
MMBT3904TT1G, SMMBT3904TT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k
W,
f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 3.0 Vdc, V
BE
= − 0.5 Vdc)
MMBT3904TT1G, SMMBT3904TT1G
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
MMBT3904TT1G, SMMBT3904TT1G
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
MMBT3904TT1G, SMMBT3904TT1G
(I
B1
= I
B2
= 1.0 mAdc)
MMBT3904TT1G, SMMBT3904TT1G
t
d
−
t
r
−
t
s
−
t
f
−
50
200
35
ns
35
f
T
300
C
obo
−
C
ibo
−
h
ie
1.0
h
re
0.5
h
fe
100
h
oe
1.0
NF
−
5.0
40
dB
400
mmhos
8.0
−
10
X 10
− 4
8.0
k
W
4.0
pF
−
pF
MHz
h
FE
40
70
100
60
30
V
CE(sat)
−
−
V
BE(sat)
0.65
−
0.85
0.95
0.2
0.3
Vdc
−
−
300
−
−
Vdc
−
V
(BR)CEO
40
V
(BR)CBO
60
V
(BR)EBO
6.0
I
BL
−
I
CEX
−
50
50
nAdc
−
nAdc
−
Vdc
−
Vdc
Vdc
Symbol
Min
Max
Unit
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
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2
MMBT3904TT1G, SMMBT3904TT1G
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
t, TIME (s)
1.0
10
100
1000
0.1
Figure 1. Normalized Thermal Response
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
10 k
275
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
+3 V
+10.9 V
275
10 k
0
- 0.5 V
< 1 ns
C
S
< 4 pF*
- 9.1 V
< 1 ns
1N916
C
S
< 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 2. Delay and Rise Time
Equivalent Test Circuit
Figure 3. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
T
J
= 25°C
T
J
= 125°C
10
7.0
CAPACITANCE (pF)
Q, CHARGE (pC)
5.0
C
ibo
3.0
2.0
C
obo
5000
3000
2000
1000
700
500
300
200
100
70
50
Q
T
Q
A
V
CC
= 40 V
I
C
/I
B
= 10
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Capacitance
Figure 5. Charge Data
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3
MMBT3904TT1G, SMMBT3904TT1G
500
300
200
100
70
50
30
20
10
7
5
I
C
/I
B
= 10
500
300
200
t r, RISE TIME (ns)
100
70
50
30
20
10
7
5
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
V
CC
= 40 V
I
C
/I
B
= 10
TIME (ns)
t
r
@ V
CC
= 3.0 V
40 V
15 V
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
2.0 V
50 70 100
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Turn −On Time
500
300
200
t s, STORAGE TIME (ns)
′
100
70
50
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
I
C
/I
B
= 20
I
C
/I
B
= 10
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
t f , FALL TIME (ns)
500
300
200
Figure 7. Rise Time
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 20
I
C
/I
B
= 10
100
70
50
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
I
C
/I
B
= 10
50 70 100
200
50 70 100
200
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Storage Time
Figure 9. Fall Time
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1.0
2.0
4.0
10
20
40
100
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50
mA
14
f = 1.0 kHz
12
10
8
6
4
2
0
0.1
I
C
= 100
mA
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
mA
0.2
0.4
1.0
2.0
4.0
10
20
40
100
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (k OHMS)
Figure 10. Noise Figure
Figure 11. Noise Figure
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4
MMBT3904TT1G, SMMBT3904TT1G
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25°C)
300
hoe, OUTPUT ADMITTANCE (
m
mhos)
5.0
10
100
50
200
h fe , CURRENT GAIN
20
10
5
100
70
50
2
1
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 12. Current Gain
20
h re , VOLTAGE FEEDBACK RATIO (X 10
-4
)
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
10
7.0
5.0
3.0
2.0
Figure 13. Output Admittance
2.0
1.0
0.5
1.0
0.7
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (mA)
5.0
10
Figure 14. Input Impedance
Figure 15. Voltage Feedback Ratio
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
T
J
= +125°C
1.0
0.7
0.5
0.3
0.2
- 55°C
+25°C
MMBT3904WT1
V
CE
= 1.0 V
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
I
C
, COLLECTOR CURRENT (mA)
Figure 16. DC Current Gain
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