NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Conditions
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 16 V, V
GS
= 0 V
T
J
=125°C
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
=125°C
V
GS
= 2.7 V, I
D
= 1.3 A
T
J
=125°C
V
GS
= 4.5 V, I
D
= 1.5 A
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 5 V, I
D
= 1.3 A,
V
GS
= 4.5 V
V
DD
= 5 V, I
D
= 1 A,
V
GS
= 5 V, R
Gen
= 6
Ω
V
GS
= 2.7 V, V
DS
= 5 V
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 5 V, I
D
= 1.3 A,
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
DYNAMIC CHARACTERISTICS
162
85
28
5
25
10
5
3.5
0.3
1
20
40
20
20
5
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
3
4
3.5
S
0.5
0.3
0.7
0.53
0.15
0.24
0.11
Min
20
1
10
100
-100
1
0.8
0.21
0.4
0.16
A
Typ
Max
Units
V
µA
µA
nA
nA
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
(Note 2)
Ω
SWITCHING CHARACTERISTICS
(Note 2)
www.onsemi.com
2
NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
I
S
I
SM
V
SD
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Parameter
Conditions
Min
Typ
Max
0.42
10
Units
A
A
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.42 A
(Note 2)
0.8
1.2
P
D
(
t
) =
R
θ
J A
t
)
(
T
J
−
T
A
=
R
θ
J C
R
θ
CA
t
)
+
(
T
J
−
T
A
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
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