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FGA60N65SMD — 650 V, 60 A Field Stop IGBT
October 2013
FGA60N65SMD
650 V, 60 A Field Stop IGBT
Features
• Maximum Junction Temperature : T
J
= 175
o
C
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: V
CE(sat)
= 1.9 V(Typ.) @ I
C
= 60 A
• Fast Switching : E
OFF
= 7.5 uJ/A
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 2
nd
generation IGBTs offer the optimum performance
for solar inverter, UPS, welder, telecom, ESS and PFC applica-
tions where low conduction and switching losses are essential.
Applications
• Solar Inverter, UPS, Welder, PFC, Telecom, ESS
C
G
TO-3PN
G CE
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM (1)
P
D
T
J
T
stg
T
L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
@ T
C
= 25 C
@ T
C
= 100 C
o
o
Ratings
650
±
20
±
30
120
60
180
60
30
180
600
300
-55 to +175
-55 to +175
300
Unit
V
V
V
A
A
A
A
A
A
W
W
o
C
o
C
o
C
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
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