NSS60600MZ4
60 V, 6.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V
CE(sat)
) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
www.onsemi.com
−60 VOLTS, 6.0 AMPS
2.0 WATTS
PNP LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
50 mW
4
1
2
3
•
Complementary to NSS60601MZ4
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
−60
−100
−6.0
−6.0
−12.0
Unit
Vdc
Vdc
Vdc
A
A
A
Y
W
60600
G
1
SOT−223
CASE 318E
STYLE 1
C 2, 4
B1
E3
MARKING DIAGRAM
AYW
60600G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
B
1
C
2
E
3
Top View Pinout
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
June, 2016 − Rev. 5
Publication Order Number:
NSS60600MZ4/D
NSS60600MZ4
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (I
C
= −10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage (I
C
= −0.1 mAdc, I
E
= 0)
Emitter −Base Breakdown Voltage (I
E
= −0.1 mAdc, I
C
= 0)
Collector Cutoff Current (V
CB
= −100 Vdc, I
E
= 0)
Emitter Cutoff Current (V
EB
= −6.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= −500 mA, V
CE
= −2.0 V)
(I
C
= −1.0 A, V
CE
= −2.0 V)
(I
C
= −2.0 A, V
CE
= −2.0 V)
(I
C
= −6.0 A, V
CE
= −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(I
C
= −0.1 A, I
B
= −2.0 mA)
(I
C
= −1.0 A, I
B
= −0.100 A)
(I
C
= −2.0 A, I
B
= −0.200 A)
(I
C
= −3.0 A, I
B
= −60 mA)
(I
C
= −6.0 A, I
B
= −0.6 A)
Base −Emitter Saturation Voltage (Note 4)
(I
C
= −1.0 A, I
B
= −0.1 A)
Base −Emitter Turn−on Voltage (Note 4)
(I
C
= −1.0 A, V
CE
= −2.0 V)
Cutoff Frequency
(I
C
= −500 mA, V
CE
= −10 V, f = 1.0 MHz)
Input Capacitance (V
EB
= 5.0 V, f = 1.0 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA)
Rise (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA)
Storage (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA)
Fall (V
CC
= −30 V, I
C
= 750 mA, I
B1
= 15 mA)
t
d
t
r
t
s
t
f
−
−
−
−
100
180
540
145
−
−
−
−
ns
ns
ns
ns
h
FE
150
120
100
70
V
CE(sat)
−
−
−
−
−
V
BE(sat)
−
V
BE(on)
−
f
T
100
Cibo
Cobo
−
−
−
360
60
−
−
−
pF
pF
−
−0.900
MHz
−
−1.0
V
−
−0.050
−0.100
−
−
−0.050
−0.070
−0.120
−0.250
−0.350
V
−
−
−
−
−
360
−
−
V
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
−60
−100
−6.0
−
−
−
−
−
−
−
−
−
−
−0.1
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
2.5
P
D
, POWER DISSIPATION (W)
2.0
T
C
1.5
1.0
T
A
0.5
0
25
50
75
100
125
150
T
J
, TEMPERATURE (°C)
Figure 1. Power Derating
www.onsemi.com
3
NSS60600MZ4
TYPICAL CHARACTERISTICS
1000
V
CE
= 2 V
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
150°C
25°C
150°C
25°C
1000
V
CE
= 4 V
100
−40°C
100
−40°C
10
0.001
10
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
0.1
25°C
−40°C
1
I
C
/I
B
= 50
Figure 3. DC Current Gain
−40°C
25°C
0.1
150°C
0.01
0.001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
0.01
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
10
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
T
J
= 25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Figure 5. Collector−Emitter Saturation Voltage
V
BE(on)
, EMITTER−BASE VOLTAGE (V)
V
CE
= 2 V
−40°C
1
I
C
= 6 A
25°C
0.1
1A
0.5 A
1.0E−02
1.0E−01
3A
2A
0.1 A
1.0E−03
0.01
1.0E−04
1.0E+00
1.0E+01
0.3
0.2
0.1
0
0.001
150°C
0.01
0.1
1
10
I
B
, BASE CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 6. Collector Saturation Region
Figure 7. V
BE(on)
Voltage
www.onsemi.com
4
NSS60600MZ4
TYPICAL CHARACTERISTICS
1.2
1.1
V
BE(sat)
, EMITTER−BASE
SATURATION VOLTAGE (V)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
150°C
25°C
−40°C
1.2
I
C
/I
B
= 10
V
BE(sat)
, EMITTER−BASE
SATURATION VOLTAGE (V)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.001
−40°C
I
C
/I
B
= 50
25°C
150°C
0.01
0.1
1
10
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 8. Base−Emitter Saturation Voltage
900
C
obo
, OUTPUT CAPACITANCE (pF)
C
ibo
, INPUT CAPACITANCE (pF)
800
700
600
500
400
300
200
100
0
0
1
2
3
4
5
6
7
8
T
J
= 25°C
f
test
= 1 MHz
180
160
140
120
100
80
60
40
20
0
0
Figure 9. Base−Emitter Saturation Voltage
T
J
= 25°C
f
test
= 1 MHz
10
20
30
40
50
60
70
80
90 100
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
140
I
C
, COLLECTOR CURRENT (A)
f
Tau
, CURRENT BANDWIDTH
PRODUCT (MHz)
120
100
80
60
40
20
0
0.001
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 10 V
100
Figure 11. Output Capacitance
100
ms
10
ms
1
ms
1s
10
1
DC
0.1
100 ms
10 ms
1 ms
0.5 ms
0.01
0.1
1
10
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
www.onsemi.com
5
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
