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MJ11032G

产品描述额定功率:300W 集电极电流Ic:50A 集射极击穿电压Vce:120V 晶体管类型:NPN - Darlington
产品类别分立半导体    晶体管   
文件大小113KB,共4页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MJ11032G概述

额定功率:300W 集电极电流Ic:50A 集射极击穿电压Vce:120V 晶体管类型:NPN - Darlington

MJ11032G规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
零件包装代码TO-3
包装说明LEAD FREE, CASE 197A-05, TO-3, 2 PIN
针数2
制造商包装代码197A-05
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time1 week
Is SamacsysN
外壳连接COLLECTOR
最大集电极电流 (IC)50 A
集电极-发射极最大电压120 V
配置DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)400
JEDEC-95代码TO-204AA
JESD-30 代码O-MBFM-P2
JESD-609代码e1
元件数量1
端子数量2
最高工作温度200 °C
最低工作温度-55 °C
封装主体材料METAL
封装形状ROUND
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)260
极性/信道类型NPN
最大功率耗散 (Abs)300 W
认证状态Not Qualified
表面贴装NO
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式PIN/PEG
端子位置BOTTOM
处于峰值回流温度下的最长时间40
晶体管应用AMPLIFIER
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
http://onsemi.com
High DC Current Gain
h
FE
= 1000 (Min) @ I
C
= 25 Adc
h
FE
= 400 (Min) @ I
C
= 50 Adc
Curves to 100 A (Pulsed)
Diode Protection to Rated I
C
Monolithic Construction with Built−In Base−Emitter Shunt Resistor
Junction Temperature to + 200_C
Pb−Free Packages are Available*
50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60
120 VOLTS
300 WATTS
NPN
COLLECTOR
CASE
BASE
1
BASE
1
PNP
COLLECTOR
CASE
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
MJ11028/29
MJ11030
MJ11032/33
MJ11028/29
MJ11030
MJ11032/33
Symbol
V
CEO
Value
60
90
120
60
90
120
5.0
50
100
2.0
300
1.71
55 to +200
Unit
Vdc
EMITTER 2
MJ11028
MJ11030
MJ11032
EMITTER 2
MJ11029
MJ11033
Collector−Base Voltage
V
CBO
Vdc
Emitter−Base Voltage
Collector Current
Continuous
Peak (Note 1)
Base Current
Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C @ T
C
= 100_C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
I
B
P
D
T
J
, T
stg
Vdc
Adc
Adc
W
W/°C
°C
2
1
MARKING
DIAGRAM
TO−204 (TO−3)
CASE 197A
STYLE 1
MJ110xxG
AYYWW
MEX
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î Î
Maximum Lead Temperature for
Soldering Purposes for
v
10 seconds
T
L
275
_C
Thermal Resistance, Junction−to−Case
R
qJC
0.58
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5
ms,
Duty Cycle
10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
Characteristic
Symbol
Max
Unit
MJ110xx = Device Code
xx = 28, 29, 30, 32, 33
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
September, 2008
Rev. 6
1
Publication Order Number:
MJ11028/D

MJ11032G相似产品对比

MJ11032G MJ11033G
描述 额定功率:300W 集电极电流Ic:50A 集射极击穿电压Vce:120V 晶体管类型:NPN - Darlington
Brand Name ON Semiconductor ON Semiconductor
是否无铅 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 TO-3 TO-3
包装说明 LEAD FREE, CASE 197A-05, TO-3, 2 PIN LEAD FREE, CASE 197A-05, TO-3, 2 PIN
针数 2 2
制造商包装代码 197A-05 197A-05
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
Factory Lead Time 1 week 1 week
外壳连接 COLLECTOR COLLECTOR
最大集电极电流 (IC) 50 A 50 A
集电极-发射极最大电压 120 V 120 V
配置 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE) 400 400
JEDEC-95代码 TO-204AA TO-204AA
JESD-30 代码 O-MBFM-P2 O-MBFM-P2
JESD-609代码 e1 e1
元件数量 1 1
端子数量 2 2
最高工作温度 200 °C 200 °C
最低工作温度 -55 °C -55 °C
封装主体材料 METAL METAL
封装形状 ROUND ROUND
封装形式 FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) 260 260
极性/信道类型 NPN PNP
最大功率耗散 (Abs) 300 W 300 W
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
端子形式 PIN/PEG PIN/PEG
端子位置 BOTTOM BOTTOM
处于峰值回流温度下的最长时间 40 40
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON

 
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