Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTR4503N, NVTR4503N
TYPICAL PERFORMANCE CURVES
10
I
D,
DRAIN CURRENT (AMPS)
10 V
6V
5V
4.5 V
4.2 V
4V
T
J
= 25°C
3.6 V
3.4 V
3.2 V
3V
2
0
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2.8 V
2.6 V
0
2
3.8 V
I
D,
DRAIN CURRENT (AMPS)
8
V
DS
≥
10 V
8
6
4
4
100°C
25°C
T
J
= −55°C
3
4
5
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.3
0.25
0.2
0.15
0.1
0.05
0
2
4
6
3
5
7
8
9
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
I
D
= 2.5 A
T
J
= 25°C
0.12
Figure 2. Transfer Characteristics
T
J
= 25°C
0.11
V
GS
= 4.5 V
0.10
0.09
0.08
V
GS
= 10 V
0.07
2
3
4
5
6
I
D,
DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1.0
0.8
0.6
−50
1
−25
0
25
50
75
100
125
150
I
D
= 2.5 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
100
1000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
10
T
J
= 100°C
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTR4503N, NVTR4503N
TYPICAL PERFORMANCE CURVES
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
300
V
DS
= 0 V
C
iss
V
GS
= 0 V
T
J
= 25°C
15
V
DS
Q
G
V
GS
5
Q
GS
Q
GD
I
D
= 2.5 A
T
J
= 25°C
0
0
1
2
3
Q
G
, TOTAL GATE CHARGE (nC)
4
15
C, CAPACITANCE (pF)
200
C
rss
10
10
100
C
oss
0
10
5
0
5
V
GS
0
V
DS
5
10
15
20
25
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
100
I
S
, SOURCE CURRENT (AMPS)
V
DD
= 24 V
I
D
= 2.5 A
V
GS
= 10 V
t, TIME (ns)
t
d(off)
t
f
10
t
d(on)
t
r
3
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
2
1
1
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTR4503N, NVTR4503N
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
HE
L
3X
b
T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
H
E
T
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0
°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10
°
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0
°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10
°
e
TOP VIEW
L1
VIEW C
A
A1
SIDE VIEW
SEE VIEW C
c
END VIEW
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
2.90
3X
0.90
3X
0.80
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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