NST3946DXV6
Complementary General
Purpose Transistor
The NST3946DXV6T1 device is a spin-off of our popular
SOT−23/SOT−323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT−563
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium.
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•
•
•
•
•
•
h
FE
, 100−300
Low V
CE(sat)
,
≤
0.4 V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
Table 1. MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
(NPN)
(PNP)
Collector −Base Voltage
(NPN)
(PNP)
Emitter −Base Voltage
(NPN)
(PNP)
Collector Current − Continuous
(NPN)
(PNP)
Electrostatic Discharge
Symbol
V
CEO
40
−40
V
CBO
60
−40
V
EBO
6.0
−5.0
I
C
200
−200
ESD
HBM>16000,
MM>2000
V
mAdc
Vdc
Vdc
Value
Unit
Vdc
SOT−563
CASE 463A
(3)
(2)
(1)
Q
1
Q
2
(4)
(5)
NST3946DXV6T1*
*Q1 PNP
Q2 NPN
(6)
MARKING DIAGRAM
46 MG
G
46 = Specific Device Code
M = Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NST3946DXV6T1G
NSVT3946DXV6T1G
NST3946DXV6T5G
Package
SOT−563
(Pb-Free)
SOT−563
(Pb-Free)
SOT−563
(Pb-Free)
Shipping
†
4,000 / Tape &
Reel
4,000 / Tape &
Reel
8,000 / Tape &
Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
1
July, 2014 − Rev. 3
Publication Order Number:
NST3946DXV6T1/D
NST3946DXV6
Table 2. THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation
Derate above 25°C
Thermal Resistance
Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation
Derate above 25°C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad
R
qJA
T
J
, T
stg
T
A
= 25°C
R
qJA
Symbol
P
D
T
A
= 25°C
Symbol
P
D
Max
357
(Note 1)
2.9
(Note 1)
350
(Note 1)
Max
500
(Note 1)
4.0
(Note 1)
250
(Note 1)
55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= −1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
(I
C
= −10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
(I
E
= −10
mAdc,
I
C
= 0)
Base Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
Collector Cutoff Current
(V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
ON CHARACTERISTICS
(Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
h
FE
(NPN)
40
70
100
60
30
60
80
100
60
30
V
CE(sat)
(NPN)
(PNP)
V
BE(sat)
(NPN)
(PNP)
0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
−
−
−
−
0.2
0.3
−0.25
−0.4
Vdc
−
−
300
−
−
−
−
300
−
−
Vdc
−
V
(BR)CEO
(NPN)
(PNP)
V
(BR)CBO
(NPN)
(PNP)
V
(BR)EBO
(NPN)
(PNP)
I
BL
(NPN)
(PNP)
I
CEX
(NPN)
(PNP)
−
−
50
−50
−
−
50
−50
nAdc
6.0
−5.0
−
−
nAdc
60
−40
−
−
Vdc
40
−40
−
−
Vdc
Vdc
Symbol
Min
Max
Unit
(PNP)
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2
NST3946DXV6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (continued)
Characteristic
SMALL- SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Small −Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
Noise Figure
(V
CE
= 5.0 Vdc, I
C
= 100
mAdc,
R
S
= 1.0 k
Ω,
f = 1.0 kHz)
(V
CE
= −5.0 Vdc, I
C
= −100
mAdc,
R
S
= 1.0 k
Ω,
f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= − 0.5 Vdc)
(V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc)
Rise Time
(I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
(I
C
= −10 mAdc, I
B1
= −1.0 mAdc)
Storage Time
(V
CC
= 3.0 Vdc, I
C
= 10 mAdc)
(V
CC
= −3.0 Vdc, I
C
= −10 mAdc)
Fall Time
(I
B1
= I
B2
= 1.0 mAdc)
(I
B1
= I
B2
= −1.0 mAdc)
t
d
(NPN)
(PNP)
t
r
(NPN)
(PNP)
t
s
(NPN)
(PNP)
t
f
(NPN)
(PNP)
−
−
50
75
−
−
200
225
−
−
35
35
ns
−
−
35
35
ns
f
T
(NPN)
(PNP)
C
obo
(NPN)
(PNP)
C
ibo
(NPN)
(PNP)
h
ie
(NPN)
(PNP)
h
re
(NPN)
(PNP)
h
fe
(NPN)
(PNP)
h
oe
(NPN)
(PNP)
NF
(NPN)
(PNP)
−
−
5.0
4.0
1.0
3.0
40
60
dB
100
100
400
400
mmhos
0.5
0.1
8.0
10
−
1.0
2.0
10
12
X 10
− 4
−
−
8.0
10.0
k
Ω
−
−
4.0
4.5
pF
300
250
−
−
pF
MHz
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width
≤
300
μs;
Duty Cycle
≤
2.0%.
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3
NST3946DXV6
(NPN)
+3 V
+10.9 V
10 k
0
- 0.5 V
< 1 ns
C
s
< 4 pF*
- 9.1 V′
< 1 ns
1N916
C
s
< 4 pF*
275
+3 V
+10.9 V
275
10 k
DUTY CYCLE = 2%
300 ns
10 < t
1
< 500
ms
DUTY CYCLE = 2%
t
1
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
CAPACITANCE (pF)
5.0
C
ibo
3.0
2.0
C
obo
(NPN)
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
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NST3946DXV6
(NPN)
500
300
200
100
70
50
30
20
10
7
5
(NPN)
t
d
@ V
OB
= 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
40 V
15 V
10
2.0 V
50 70 100
200
7
5
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 10
500
300
200
t r, RISE TIME (ns)
100
70
50
30
20
V
CC
= 40 V
I
C
/I
B
= 10
TIME (ns)
t
r
@ V
CC
= 3.0 V
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 4. Turn-On Time
500
300
200
t s, STORAGE TIME (ns)
′
100
70
50
30
20
10
7
5
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
t′
s
= t
s
-
1
/
8
t
f
I
B1
= I
B2
t f , FALL TIME (ns)
500
300
200
Figure 5. Rise Time
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
100
70
50
30
20
10
7
5
(NPN)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
I
C
/I
B
= 10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
Figure 7. Fall Time
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
12
10
NF, NOISE FIGURE (dB)
8
6
4
2
0
0.1
SOURCE RESISTANCE = 500
W
I
C
= 100
mA
0.2
0.4
1.0
2.0
4.0
SOURCE RESISTANCE = 200
W
I
C
= 1.0 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
W
I
C
= 0.5 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50
mA
14
f = 1.0 kHz
12
10
8
6
4
2
20
40
100
0
0.1
0.2
0.4
1.0
2.0
4.0
(NPN
)
10
20
40
100
R
S
, SOURCE RESISTANCE (k OHMS)
I
C
= 100
mA
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50
mA
(NPN)
10
f, FREQUENCY (kHz)
Figure 8. Noise Figure
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5
Figure 9. Noise Figure
FPGA/CPLD
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