(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
Value
200
Unit
V
3.0
100
−65
to +175
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
R
qJL
R
qJA
Value
13
62
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(I
F
= 3.0 A, T
J
= 25°C)
(I
F
= 4.0 A, T
J
= 25°C)
(I
F
= 3.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 150°C)
V
F
0.84
0.86
0.59
1.0
5.0
V
I
R
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Minimum pad size (0.108
×
0.085 inch) for each lead on FR4 board.
2. 1 inch square pad size (1
×
0.5 inch) for each lead on FR4 board.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
100
I
F
, FORWARD CURRENT (A)
T
A
= 150°C
T
A
= 175°C
T
A
= 100°C
I
F
, FORWARD CURRENT (A)
100
T
A
= 150°C
T
A
= 175°C
T
A
= 100°C
10
T
A
= 25°C
10
T
A
= 25°C
1
1
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
F
, FORWARD VOLTAGE (V)
0.1
0.2 0.3 0.4
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
F
, FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
MBRS3200T3G, NRVBS3200T3G
1.0E−02
I
R
, REVERSE CURRENT (A)
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
1.0E−09
0
T
A
= 25°C
20
40
60
80
100
T
A
= 100°C
T
A
= 175°C
T
A
= 150°C
1.0E−02
I
R
, REVERSE CURRENT (A)
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−08
20
40
60
80
100
120 140 160 180 200
T
A
= 25°C
T
A
= 100°C
T
A
= 175°C
T
A
= 150°C
120 140 160 180 200
1.0E−09
0
V
R
, REVERSE VOLTAGE (V)
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
1000
T
C
= 25°C
f = 1 MHz
Typical Capacitance
at 0 V = 209 V
100
I
F
, AVERAGE FORWARD CURRENT (A)
7
6
5
4
3
2
1
0
80
90
100 110 120 130 140 150 160 170 180
T
L
, LEAD TEMPERATURE (°C)
SQUARE WAVE
R
qJL
= 13°C/W
dc
C, CAPACITANCE (pF)
10
0
20
40
60
80
100
120 140 160 180 200
V
R
, REVERSE VOLTAGE (V)
Figure 5. Typical Capacitance
Figure 6. Current Derating
−
Lead
P
fo
, AVERAGE POWER DISSIPATION (W)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
SQUARE WAVE
dc
0
1
2
3
4
5
6
I
O
, AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
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3
MBRS3200T3G, NRVBS3200T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
DIM
A
A1
b
c
D
E
H
E
L
L1
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
L1
c
A1
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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ON Semiconductor reserves the right to make changes without further notice to any products herein.
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