NSS1C201L, NSV1C201L
100 V, 3.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
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100 VOLTS, 3.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
1
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
100
140
7.0
2.0
3.0
Unit
Vdc
Vdc
Vdc
A
A
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
VT MG
G
1
VT = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
Max
490
3.7
R
qJA
(Note 1)
P
D
(Note 2)
255
710
4.3
R
qJA
(Note 2)
T
J
, T
stg
176
−55
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ORDERING INFORMATION
Device
NSS1C201LT1G,
NSV1C201LT1G
Package
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm
2
, 1 oz. copper traces.
2. FR− 4 @ 500 mm
2
, 1 oz. copper traces.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C201L/D
©
Semiconductor Components Industries, LLC, 2008
October, 2016
−
Rev. 6
1
NSS1C201L, NSV1C201L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 140 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 6.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 10 mA, V
CE
= 2.0 V)
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V)
Collector
−Emitter
Saturation Voltage (Note 3)
(I
C
= 0.1 A, I
B
= 0.01 A)
(I
C
= 0.5 A, I
B
= 0.05 A)
(I
C
= 1.0 A, I
B
= 0.100 A)
(I
C
= 2.0 A, I
B
= 0.200 A)
Base
−Emitter
Saturation Voltage (Note 3)
(I
C
= 1.0 A, I
B
= 0.100 A)
Base
−Emitter
Turn−on Voltage (Note 3)
(I
C
= 1.0 A, V
CE
= 2.0 V)
Cutoff Frequency
(I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz)
Input Capacitance (V
EB
= 2.0 V, f = 1.0 MHz)
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz)
h
FE
150
120
80
40
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Vdc
100
Vdc
140
Vdc
7.0
nAdc
100
nAdc
50
Symbol
Min
Typ
Max
Unit
240
360
V
CE(sat)
V
0.030
0.060
0.090
0.150
V
0.950
V
0.850
MHz
110
230
14
pF
pF
V
BE(sat)
V
BE(on)
f
T
Cibo
Cobo
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
TYPICAL CHARACTERISTICS
0.8
P
D
, POWER DERATING (W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
Note 1
Note 2
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. Power Derating
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2
NSS1C201L, NSV1C201L
TYPICAL CHARACTERISTICS
400
350
h
FE
, DC CURRENT GAIN
300
250
200
150
100
50
0
0.001
0.01
0.1
1
10
−55°C
25°C
400
350
h
FE
, DC CURRENT GAIN
300
250
200
150
100
50
0
0.001
0.01
0.1
1
10
−55°C
25°C
150°C
V
CE
= 2 V
150°C
V
CE
= 4 V
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
V
CE(sat)
, COLLECTOR−EMITTER SATURATION (V)
1
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION (V)
I
C
/I
B
= 10
150°C
25°C
0.1
−55°C
1
I
C
/I
B
= 20
Figure 3. DC Current Gain
150°C
25°C
0.1
−55°C
0.01
0.001
0.01
0.1
1
10
0.01
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 4. Collector−Emitter Saturation Voltage
V
BE(sat)
, BASE−EMITTER SATURATION (V)
1.2
I
C
/I
B
= 10
1.0
0.8
25°C
0.6
150°C
0.4
0.2
−55°C
V
BE(sat)
, BASE−EMITTER SATURATION (V)
1.2
Figure 5. Collector−Emitter Saturation Voltage
I
C
/I
B
= 50
1.0
−55°C
0.8
0.6
0.4
0.2
25°C
150°C
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
Figure 6. Base−Emitter Saturation Voltage
Figure 7. Base−Emitter Saturation Voltage
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3
NSS1C201L, NSV1C201L
TYPICAL CHARACTERISTICS
1.2
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 2 V
1.0
−55°C
0.8
0.6
0.4
0.2
25°C
1
2A
1A
0.5 A
0.1
I
C
= 0.1 A
3A
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
150°C
0.001
0.01
0.1
1
10
0.01
0.0001
0.001
0.01
0.1
1
I
C
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (A)
Figure 8. Base Emitter Voltage
400
C
IB
, INPUT CAPACITANCE (pF)
350
300
250
200
150
100
50
0
0
1
2
3
4
5
6
7
8
T
J
= 25°C
f
TEST
= 1 MHz
C
OB
, OUTPUT CAPACITANCE (pF)
50
45
40
35
30
25
20
15
10
5
0
Figure 9. Collector Saturation Region
T
J
= 25°C
f
TEST
= 1 MHz
0
10
20
30
40
50
60
70
80
90 100
V
EB
, EMITTER BASE VOLTAGE (V)
V
CB
, COLLECTOR BASE VOLTAGE (V)
Figure 10. Input Capacitance
f
Tau
, CURRENT GAIN BANDWIDTH (MHz)
140
120
100
80
60
40
20
0
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Figure 11. Output Capacitance
T
J
= 25°C
f
TEST
= 1 MHz
V
CE
= 2 V
10 mS
1
Thermal Limit
0.1
100 mS
1 mS
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 12. Current−Gain Bandwidth Product
Figure 13. Safe Operating Area
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