NSR0620P2T5G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0620P2 in a SOD−923 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
Features
http://onsemi.com
•
•
•
•
•
•
•
Very Low Forward Voltage Drop − 350 mV @ 100 mA
Low Reverse Current − 2.0
mA
@ 10 V
Continuous Forward Current − 500 mA
Power Dissipation with Minimum Trace − 190 mW
Very High Switching Speed − 4.0 ns @ 10 mA
Low Capacitance − 12 pF @ 1.0 V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
20 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
Typical Applications
MARKING
DIAGRAM
F
1
1
MG
G
•
•
•
•
•
•
•
•
•
•
LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
SOD−923
CASE 514AB
PLASTIC
2
Markets
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
F = Specific Device Code
M = Month Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSR0620P2T5G
Package
SOD−923
(Pb−Free)
Shipping†
2 mm Pitch
8000/Tape & Reel
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Continuous Current (DC)
Non−Repetitive Peak Forward Surge
Current
ESD Rating: Human Body Model
Machine Model
Symbol
V
R
I
F
I
FSM
ESD
Value
20
500
1.0
Class 3B
Class C
Unit
Vdc
mA
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2014
1
September, 2014 − Rev. 3
Publication Order Number:
NSR0620P2/D
NSR0620P2T5G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
Junction Operating and Storage Temperature Range
Symbol
R
qJA
P
D
R
qJA
P
D
T
J
, T
stg
Max
520
190
175
570
−55 to +125
Unit
°C/W
mW
°C/W
mW
°C
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Reverse Leakage
(V
R
= 10 V)
(V
R
= 20 V)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 500 mA)
Total Capacitance
(V
R
= 1.0 V, f = 1 MHz)
Reverse Recovery Time
(I
F
= I
R
= 10 mA, I
R
= 1.0 mA)
Symbol
I
R
2.0
9.0
V
F
270
350
480
CT
Min
Typ
Max
10
Unit
mA
mV
310
390
520
pF
ns
12
4.0
t
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
DC Current
Source
+
−
0.1
mF
t
r
0V
t
p
10%
750
mH
0.1
mF
I
F
V
R
90%
50
W
Output
Pulse
Generator
Pulse Generator
Output
I
F
DUT
t
rr
Adjust for I
RM
R
L
= 50
W
Current
Transformer
50
W
Input
Oscilloscope
1.
2.
3.
4.
5.
I
RM
i
R(REC)
= 1 mA
Output Pulse
(I
F
= I
RM
= 10 mA; measured
at i
R(REC)
= 1 mA)
DC Current Source is adjusted for a Forward Current (I
F
) of 10 mA.
Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I
RM
of 10 mA.
Pulse Generator transition time << t
rr
.
I
R(REC)
is measured at 1 mA. Typically 0.1 X I
RM
or 0.25 X I
RM
.
t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
NSR0620P2T5G
PACKAGE DIMENSIONS
SOD−923
CASE 514AB
ISSUE C
−X−
D
−Y−
E
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
DIM
A
b
c
D
E
H
E
L
L2
MILLIMETERS
MIN
NOM MAX
0.34
0.37
0.40
0.15
0.20
0.25
0.07
0.12
0.17
0.75
0.80
0.85
0.55
0.60
0.65
0.95
1.00
1.05
0.19 REF
0.05
0.10
0.15
INCHES
MIN
NOM MAX
0.013 0.015 0.016
0.006 0.008 0.010
0.003 0.005 0.007
0.030 0.031 0.033
0.022 0.024 0.026
0.037 0.039 0.041
0.007 REF
0.002 0.004 0.006
b
0.08 X Y
2X
TOP VIEW
A
c
H
E
SIDE VIEW
SOLDERING FOOTPRINT*
2X
L
2X
1.20
2X
0.36
0.25
2X
L2
BOTTOM VIEW
PACKAGE
OUTLINE
DIMENSIONS: MILLIMETERS
See Application Note AND8455/D for more mounting details
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
4
NSR0620P2/D