NJD2873
Power Transistors
NPN Silicon DPAK For Surface Mount
Applications
Designed for high−gain audio amplifier applications.
Features
www.onsemi.com
•
•
•
•
•
High DC Current Gain
Low Collector−Emitter Saturation Voltage
High Current−Gain − Bandwidth Product
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
A
= 25°C*
Derate above 25°C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CB
V
CEO
V
EB
I
C
I
CM
I
B
P
D
15
0.1
P
D
1.68
0.011
T
J
, T
stg
HBM
MM
−65 to +175
3B
C
W
W/°C
°C
V
V
W
W/°C
Value
50
50
5
2
3
0.4
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
SILICON
POWER TRANSISTORS
2 AMPERES
50 VOLTS
15 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
4
1 2
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
J
2873G
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Device
ORDERING INFORMATION
Device
NJD2873T4G
NJVNJD2873T4G
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2,500
Units / Reel
2,500
Units / Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2017
1
January, 2017 − Rev. 18
Publication Order Number:
NJD2873T4/D
NJD2873
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Symbol
R
qJC
R
qJA
Max
10
89.3
Unit
°C/W
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 50 Vdc, I
E
= 0)
Emitter Cutoff Current (V
BE
= 5 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 2)
(I
C
= 0.5 A, V
CE
= 2 V)
(I
C
= 2 Adc, V
CE
= 2 Vdc)
(I
C
= 0.75 Adc, V
CE
= 1.6 Vdc, −40°C
≤
T
J
≤
150°C)
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= 1 A, I
B
= 0.05 A)
Base−Emitter Saturation Voltage (Note 2) (I
C
= 1 A, I
B
= 0.05 Adc)
Base−Emitter On Voltage (Note 2)
(I
C
= 1 Adc, V
CE
= 2 Vdc)
(I
C
= 0.75 Adc, V
CE
= 1.6 Vdc, −40°C
≤
T
J
≤
150°C)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 3)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
f
T
65
C
ob
−
80
−
pF
MHz
h
FE
120
40
80
V
CE(sat)
−
V
BE(sat)
V
BE(on)
−
−
1.2
0.95
−
0.3
1.2
Vdc
Vdc
360
−
360
Vdc
−
V
CEO(sus)
50
I
CBO
−
I
EBO
−
100
100
nAdc
−
nAdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
[
2%.
3. f
T
=
⎪h
fe
⎪•
f
test
.
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2
NJD2873
TYPICAL CHARACTERISTICS
25
PD , POWER DISSIPATION (WATTS)
20
15
10
5
0
0
25
50
75
100
125
150
175
200
T, TEMPERATURE (°C)
Figure 1. Power Derating
1000
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
175°C
h
FE
, DC CURRENT GAIN
150°C
V
CE
= 2.0 V
0.4
175°C
150°C
0.3
100°C
25°C
−40°C
0.2
100
100°C
25°C
−40°C
0.1
Ic/Ib = 20
0
0.01
0.1
1
I
C
, COLLECTOR CURRENT (AMPS)
10
10
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain
Figure 3. Collector−Emitter Saturation Voltage
V
BE(sat)
, BASE−EMITTER SATURATION
VOLTAGE (V)
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
175°C
0.1
1
Ic/Ib = 20
10
−40°C
25°C
100°C
150°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.01
0.1
1
10
V
CE
= 2.0 V
−40°C
25°C
100°C
150°C
175°C
0.2
0.01
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 4. Base−Emitter Saturation Voltage
Figure 5. Base−Emitter Voltage
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3
NJD2873
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
A
E
A
b3
4
C
B
c2
Z
DETAIL A
L3
1
D
2
3
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
L4
b2
e
NOTE 7
b
TOP VIEW
0.005 (0.13)
M
c
SIDE VIEW
C
Z
C
SEATING
PLANE
BOTTOM VIEW
H
L2
GAUGE
PLANE
Z
L
L1
DETAIL A
ROTATED 90 CW
5
A1
BOTTOM VIEW
ALTERNATE
CONSTRUCTIONS
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
SCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
NJD2873T4/D
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