Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
FEATURES
•
Symmetrical output impedance
•
High noise immunity
•
ESD protection:
– HBM EIA/JESD22-A114-A exceeds 2000 V
– MM EIA/JESD22-A115-A exceeds 200 V
– CDM EIA/JESD22-C101 exceeds 1000 V.
•
Low power dissipation
•
Balanced propagation delays
•
Very small 5-pin package
•
Output capability: standard
•
Specified from
−40
to +125
°C.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°C;
t
r
= t
f
≤
3.0 ns.
74AHC1G125; 74AHCT1G125
DESCRIPTION
The 74AHC1G/AHCT1G125 is a high-speed Si-gate
CMOS device.
The 74AHC1G/AHCT1G125 provides one non-inverting
buffer/line driver with 3-state output. The 3-state output is
controlled by the output enable input (OE). A HIGH at OE
causes the output to assume a high-impedance
OFF-state.
TYPICAL
SYMBOL
t
PHL
/t
PLH
C
I
C
PD
Notes
1. C
PD
is used to determine the dynamic power dissipation (P
D
in
µW).
P
D
= C
PD
×
V
CC2
×
f
i
+ (C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in Volts.
2. The condition is V
I
= GND to V
CC
.
FUNCTION TABLE
See note 1.
INPUTS
OE
L
L
H
Note
1. H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
2002 Jun 06
2
A
L
H
X
OUTPUT
Y
L
H
Z
PARAMETER
propagation delay A to Y
input capacitance
CONDITIONS
AHC1G
C
L
= 15 pF; V
CC
= 5 V
3.4
1.5
AHCT1G
3.4
1.5
11
ns
pF
pF
UNIT
power dissipation capacitance C
L
= 50 pF; f = 1 MHz; notes 1 and 2 9
Philips Semiconductors
Product specification
Bus buffer/line driver; 3-state
RECOMMENDED OPERATING CONDITIONS
74AHC1G125; 74AHCT1G125
74AHC1G
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall times
see DC and AC
characteristics per device
V
CC
= 3.3
±0.3
V
V
CC
= 5
±0.5
V
CONDITIONS
MIN.
2.0
0
0
−40
−
−
74AHCT1G
UNIT
TYP. MAX.
5.0
−
−
+25
−
−
5.5
5.5
V
CC
V
V
V
TYP. MAX. MIN.
5.0
−
−
+25
−
−
5.5
5.5
V
CC
4.5
0
0
+125
−40
100
20
−
−
+125
°C
−
20
ns/V
ns/V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
V
I
I
IK
I
OK
I
O
I
CC
T
stg
P
D
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
PARAMETER
supply voltage
input voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation per package for temperature range from
−40
to +125
°C
V
I
<
−0.5
V
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V; note 1
−0.5
V < V
O
< V
CC
+ 0.5 V
CONDITIONS
MIN. MAX. UNIT
−0.5
−0.5
−
−
−
−
−65
−
+7.0
+7.0
−20
±20
±25
±75
250
V
V
mA
mA
mA
mA
mW
+150
°C
2002 Jun 06
4
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