Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
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Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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-
© Nexperia B.V. (year). All rights reserved.
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Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
PZTA42
NPN high-voltage transistor
Product data sheet
Supersedes data of 1997 Jun 16
1999 May 21
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
FEATURES
•
Low current (max. 100 mA)
•
High voltage (max. 300 V).
APPLICATIONS
•
Telephony and professional communication equipment.
DESCRIPTION
NPN high-voltage transistor in a SOT223 plastic package.
PNP complement: PZTA92.
1
4
PZTA42
PINNING
PIN
1
2,4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
2, 4
3
1
Top view
2
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
300
300
6
100
200
100
1.2
+150
150
+150
V
V
V
mA
mA
mA
W
°C
°C
°C
UNIT
1999 May 21
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
104
23
PZTA42
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 200 V
I
C
= 0; V
BE
= 6 V
V
CE
= 10 V
I
C
= 1 mA
I
C
= 10 mA
I
C
= 30 mA
V
CEsat
V
BEsat
C
re
f
T
collector-emitter saturation
voltage
base-emitter saturation voltage
feedback capacitance
transition frequency
I
C
= 20 mA; I
B
= 2 mA
I
C
= 20 mA; I
B
= 2 mA
I
C
= i
c
= 0; V
CB
= 20 V; f = 1 MHz
25
40
40
−
−
−
−
−
−
500
900
3
−
mV
mV
pF
MHz
−
−
MIN.
MAX.
20
100
UNIT
nA
nA
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz 50
1999 May 21
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistor
PACKAGE OUTLINE
PZTA42
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 May 21
4
PCB设计
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