PESD5V0X1BL
31 July 2018
Ultra low capacitance bidirectional ESD protection diode
Product data sheet
1. General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a SOD882
leadless ultra small Surface-Mounted Device (SMD) plastic package designed to protect one signal
line from the damage caused by ESD and other transients.
2. Features and benefits
•
•
•
•
•
•
Bidirectional ESD protection of one line
ESD protection up to 9 kV
Ultra low diode capacitance: C
d
= 0.9 pF
Very low leakage current: I
RM
= 1 nA
IEC 61000-4-2; level 4 (ESD)
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
•
•
•
•
USB interfaces
Cellular handsets and accessories
Antenna protection
Portable electronics
10/100/1000 Mbit/s Ethernet
Communication systems
Computers and peripherals
High-speed data lines
Audio and video equipment
SIM card protection
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V
RWM
C
d
reverse standoff
voltage
diode capacitance
Conditions
T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
Min
-
-
Typ
-
0.9
Max
5
1.3
Unit
V
pF
Nexperia
PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
2
K1
K2
cathode (diode 1)
cathode (diode 2)
1
2
Simplified outline
Graphic symbol
1
2
006aab041
Transparent
top view
DFN1006-2
(SOD882)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PESD5V0X1BL
DFN1006-2
Description
Version
plastic, leadless ultra small package; 2 terminals; 0.65 mm pitch; SOD882
1 mm x 0.6 mm x 0.48 mm body
7. Marking
Table 4. Marking codes
Type number
PESD5V0X1BL
Marking code
XX
PESD5V0X1BL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
31 July 2018
2 / 10
Nexperia
PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
T
j
T
amb
T
stg
V
ESD
Parameter
junction temperature
ambient temperature
storage temperature
electrostatic discharge
voltage
IEC 61000-4-2 (contact discharge)
MIL-STD-883 (human body model)
[1]
Conditions
Min
-
-55
-65
-
-
Max
150
150
150
9
10
Unit
°C
°C
°C
kV
kV
ESD maximum ratings
[1]
Device stressed with ten non-repetitve ESD pulses.
I
PP
100 %
90 %
10 %
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
001aaa631
t
Fig. 1.
ESD pulse waveform according to IEC 61000-4-2
PESD5V0X1BL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
31 July 2018
3 / 10
Nexperia
PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
V
RWM
V
BR
I
RM
C
d
r
dif
1.0
Cd
(pF)
0.96
Conditions
T
amb
= 25 °C
I
R
= 5 mA; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
f = 1 MHz; V
R
= 5 V; T
amb
= 25 °C
I
R
= 1 mA; T
amb
= 25 °C
006aab249
Min
-
6
-
-
-
-
I
PP
Typ
-
7.5
1
0.9
0.8
-
Max
5
9.5
100
1.3
1.2
100
Unit
V
V
nA
pF
pF
Ω
reverse standoff
voltage
breakdown voltage
diode capacitance
differential resistance
reverse leakage current V
RWM
= 5 V; T
amb
= 25 °C
0.92
-V
CL
-V
BR
-V
RWM
I
R
I
RM
-I
RM
-I
R
V
RWM
V
BR
V
CL
0.88
0.84
-
+
0.80
0
1
2
3
4
VR (V)
5
-I
PP
006aaa676
f = 1 MHz; T
amb
= 25 °C
Fig. 2.
Diode capacitance as a function of reverse
voltage; typical values
Fig. 3.
V-I characteristics for a bidirectional ESD
protection diode
PESD5V0X1BL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
31 July 2018
4 / 10
Nexperia
PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
RZ
CZ
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
40 dB
ATTENUATOR
50 Ω
IEC 61000-4-2 network
C
Z
= 150 pF; R
Z
= 330 Ω
DUT
(DEVICE
UNDER
TEST)
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 20 V/div
horizontal scale = 100 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
GND
vertical scale = 20 V/div
horizontal scale = 100 ns/div
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
006aab336
Fig. 4.
ESD clamping test setup and waveforms
PESD5V0X1BL
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
31 July 2018
5 / 10
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
