Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
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Thank you for your cooperation and
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Kind regards,
Team Nexperia
NXP Semiconductors
Product data sheet
PNP switching transistor
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 60 V).
APPLICATIONS
•
Switching and linear amplification.
DESCRIPTION
PNP switching transistor in a SOT223 plastic package.
NPN complement: PZT2222A.
4
PZT2907A
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
2, 4
1
3
1
Top view
2
3
MAM288
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−60
−60
−5
−600
−800
−200
1.15
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
1999 Apr 14
2
NXP Semiconductors
Product data sheet
PNP switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
PZT2907A
VALUE
106
25
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−50
V
I
E
= 0; V
CB
=
−50
V; T
amb
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−0.1
mA; V
CE
=
−10
V
I
C
=
−1
mA; V
CE
=
−10
V
I
C
=
−10
mA; V
CE
=
−10
V
I
C
=
−150
mA; V
CE
=
−10
V; note 1
I
C
=
−500
mA; V
CE
=
−10
V; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
C
=
−150
mA; I
B
=
−15
mA; note 1
I
C
=
−500
mA; I
B
=
−50
mA; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−2
V; f = 1 MHz
I
C
=
−50
mA; V
CE
=
−20
V;
f = 100 MHz; note 1
I
Con
=
−150
mA; I
Bon
=
−15
mA;
I
Boff
= 15 mA
−
−
−
75
100
100
100
50
−
−
−
−
−
−
200
MIN.
MAX.
−10
−10
−50
−
−
−
300
−
−400
−1.6
−1.3
−2.6
8
30
−
mV
V
V
V
pF
pF
MHz
UNIT
nA
µA
nA
Switching times (between 10% and 90% levels);
(see Fig.2)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
−
−
−
−
−
−
40
12
30
365
300
65
ns
ns
ns
ns
ns
ns
1999 Apr 14
3
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