Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection
diode
Rev. 01 — 27 March 2007
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional double ElectroStatic Discharge (ESD) protection diode
in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed
to protect two data lines from the damage caused by ESD.
1.2 Features
I
Bidirectional ESD protection of two lines
I
Ultra low leakage current: I
RM
= 5 nA
I
Ultra low diode capacitance: C
d
= 2.9 pF
I
ESD protection of up to 10 kV
I
IEC 61000-4-2; level 4 (ESD)
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
10/100/1000 Ethernet
I
Local Area Network (LAN) equipment
I
Communication systems
I
Portable electronics
I
Subscriber Identity Module (SIM) card
protection
I
FireWire
I
High-speed data lines
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
C
d
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
-
-
-
2.9
5
3.5
V
pF
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection diode
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
cathode 1
cathode 2
common cathode
1
2
3
Simplified outline
3
Symbol
1
2
006aaa155
3. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0U2BT
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
1U*
Type number
PESD5V0U2BT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PESD5V0U2BT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 March 2007
2 of 11
NXP Semiconductors
PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
j
T
amb
T
stg
Table 6.
Symbol
Per diode
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to pin 2.
[1][2]
Parameter
junction temperature
ambient temperature
storage temperature
ESD maximum ratings
Parameter
Conditions
Min
-
−65
−65
Max
150
+150
+150
Unit
°C
°C
°C
Conditions
Min
-
-
Max
10
8
Unit
kV
kV
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
I
PP
100 %
90 %
10 %
t
r
=
0.7 ns to 1 ns
30 ns
60 ns
t
Fig 1. ESD pulse waveform according to IEC 61000-4-2
PESD5V0U2BT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 March 2007
3 of 11
NXP Semiconductors
PESD5V0U2BT
Ultra low capacitance bidirectional double ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
I
RM
V
BR
C
d
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
V
RWM
= 5 V
I
R
= 5 mA
f = 1 MHz
V
R
= 0 V
V
R
= 5 V
r
dif
differential resistance
I
R
= 1 mA
-
-
-
2.9
1.9
-
3.5
-
100
pF
pF
Ω
-
-
5.5
-
5
7
5
100
9.5
V
nA
V
Parameter
Conditions
Min
Typ
Max
Unit
3.0
C
d
(pF)
2.6
006aab036
I
PP
−V
CL
−V
BR
−V
RWM
I
R
I
RM
−I
RM
−I
R
V
RWM
V
BR
V
CL
2.2
−
+
1.8
0
1
2
3
4
V
R
(V)
5
−I
PP
006aaa676
f = 1 MHz; T
amb
= 25
°C
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
Fig 3. V-I characteristics for a bidirectional ESD
protection diode
PESD5V0U2BT_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 27 March 2007
4 of 11
淘e淘
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
