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PESD5V0U1BA;
PESD5V0U1BB; PESD5V0U1BL
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 25 April 2007
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one data line
from the damage caused by ESD.
Table 1.
Product overview
Package
NXP
PESD5V0U1BA
PESD5V0U1BB
PESD5V0U1BL
SOD323
SOD523
SOD882
JEITA
SC-76
SC-79
-
Package
configuration
very small
flat lead ultra small
leadless ultra small
Type number
1.2 Features
I
Bidirectional ESD protection of one line
I
Ultra low leakage current: I
RM
= 5 nA
I
Ultra low diode capacitance: C
d
= 2.9 pF
I
ESD protection of up to 10 kV
I
IEC 61000-4-2; level 4 (ESD)
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
10/100/1000 Ethernet
I
Local Area Network (LAN) equipment
I
Communication systems
I
Portable electronics
I
Subscriber Identity Module (SIM) card
protection
I
FireWire
I
High-speed data lines
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
C
d
reverse standoff voltage
diode capacitance
f = 1 MHz; V
R
= 0 V
-
-
-
2.9
5
3.5
V
pF
Parameter
Conditions
Min
Typ
Max
Unit
NXP Semiconductors
PESD5V0U1BA/BB/BL
Ultra low capacitance bidirectional ESD protection diodes
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode 1
cathode 2
[1]
Simplified outline
Symbol
SOD323; SOD523
1
001aab540
2
1
sym045
2
SOD882
1
2
cathode 1
cathode 2
[1]
1
2
1
sym045
2
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PESD5V0U1BA
PESD5V0U1BB
PESD5V0U1BL
SC-76
SC-79
-
Description
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
leadless ultra small plastic package; 2 terminals;
body 1.0
×
0.6
×
0.5 mm
Version
SOD323
SOD523
SOD882
Type number
4. Marking
Table 5.
Marking codes
Marking code
AA
B3
AN
Type number
PESD5V0U1BA
PESD5V0U1BB
PESD5V0U1BL
PESD5V0U1BA_BB_BL_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 25 April 2007
2 of 12
NXP Semiconductors
PESD5V0U1BA/BB/BL
Ultra low capacitance bidirectional ESD protection diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
j
T
amb
T
stg
Table 7.
Symbol
Per diode
V
ESD
electrostatic discharge
voltage
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to pin 2.
[1][2]
Parameter
junction temperature
ambient temperature
storage temperature
ESD maximum ratings
Parameter
Conditions
Min
-
−65
−65
Max
150
+150
+150
Unit
°C
°C
°C
Conditions
Min
-
-
Max
10
8
Unit
kV
kV
Table 8.
Standard
Per diode
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
I
PP
100 %
90 %
10 %
t
r
=
0.7 ns to 1 ns
30 ns
60 ns
t
Fig 1. ESD pulse waveform according to IEC 61000-4-2
PESD5V0U1BA_BB_BL_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 25 April 2007
3 of 12
NXP Semiconductors
PESD5V0U1BA/BB/BL
Ultra low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
I
RM
V
BR
C
d
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
V
RWM
= 5 V
I
R
= 5 mA
f = 1 MHz
V
R
= 0 V
V
R
= 5 V
r
dif
differential resistance
I
R
= 1 mA
-
-
-
2.9
1.9
-
3.5
-
100
pF
pF
Ω
-
-
5.5
-
5
7
5
100
9.5
V
nA
V
Parameter
Conditions
Min
Typ
Max
Unit
3.0
C
d
(pF)
2.6
006aab036
I
PP
−V
CL
−V
BR
−V
RWM
I
R
I
RM
−I
RM
−I
R
V
RWM
V
BR
V
CL
2.2
−
+
1.8
0
1
2
3
4
V
R
(V)
5
−I
PP
006aaa676
f = 1 MHz; T
amb
= 25
°C
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
Fig 3. V-I characteristics for a bidirectional ESD
protection diode
PESD5V0U1BA_BB_BL_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 25 April 2007
4 of 12
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