This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment.Do not use these products in any automotive power
train or safety equipment including battery chargers for electric vehicles and plugin hybrids.
2.MURATA Part NO. System
(Ex.)
GRM
21
(1)L/W
Dimensions
B
(2)T
Dimensions
5C
(3)Temperature
Characteristics
2J
(4)Rated
Voltage
681
(5)Nominal
Capacitance
J
(6)Capacitance
Tolerance
WA3
(7)Murata’s Control
Code
L
(8)Packaging Code
3. Type & Dimensions
(1)-1 L
2.0±0.2
(1)-2 W
1.25±0.2
(2) T
1.25±0.2
e
0.3 min.
(Unit:mm)
g
0.7 min.
4.Rated value
(3) Temperature Characteristics
(Public STD Code):C0G(EIA)
Temp. coeff
Temp. Range
or Cap. Change
(Ref.Temp.)
(4)
Rated
Voltage
(6)
(5) Nominal
Capacitance
Capacitance
Tolerance
Specifications and Test
Methods
(Operating
Temp. Range)
0±30 ppm/°C
・Soldering
Method
Flow / Reflow
25 to 125 °C
(25 °C)
DC 630 V
680 pF
±5 %
-55 to 125 °C
5.Package
mark
L
K
(8) Packaging
f180mm
Reel
EMBOSSED
f330mm
Reel
EMBOSSED
Packaging Unit
3000 pcs./Reel
10000 pcs./Reel
Product specifications in this catalog are as of Sep.14,2016,and are subject to change or obsolescence without notice.
Please consult the approval sheet before ordering.
Please read rating and !Cautions first.
GRM21B5C2J681JWA3-01
1
■
Specifications and Test Methods
No
1
2
3
Appearance
Dimension
Voltage proof
Item
Specification
No defects or abnormalities.
Within the specified dimensions.
No defects or abnormalities.
Visual inspection.
Using calipers and micrometers.
Measurement Point :
Test Voltage
:
Between the terminations
200% of the rated voltage
(Rated
voltage:DC200V,DC250V)
150% of the rated voltage
(Rated
voltage:DC500V,DC630V)
130% of the rated voltage
(Rated
voltage:DC1kV,DC2kV)
(Rated voltage(7U only):DC3.15kV)
Applied Time
:
1 to 5 s
Charge/discharge current : 50mA max.
4
Insulation Resistance(I.R.)
More than 10000MΩ or 100MΩ・μF
(Whichever is smaller)
Measurement Point
:
Measurement Voltage :
Between the terminations
DC200+/-20V(Rated voltage:DC200V)
DC250+/-25V(Rated voltage:DC250V)
DC500+/-50V
(Rated voltage:DC500V,DC630V,DC1kV,DC2kV)
(Rated voltage(7U only):DC3.15kV)
Charging Time
:
60+/-5s
Measurement Temperature: Room Temperature
5
Capacitance
Shown in Rated value.
Measurement Temperature: Room Temperature
Test Method
(Ref. Standard:JIS C 5101, IEC60384）
6
Q
1000 min.
Capacitance
C＜1000pF
C≥1000pF
Frequency
1.0+/-0.1Mhz
1.0+/-0.1khz
Voltage
AC 0.5 to 5.0V(r.m.s)
AC 1.0+/-0.2V(r.m.s)
7
Temperature
Characteristics
of Capacitance
5C:0+/-30 ppm/°C
0+30/-72 ppm/°C
7U：-750+/-120 ppm/°C
(Temp.Range:+25 to +125°C)
(Temp.Range:-55 to +25°C)
(Temp.Range:+25 to +125℃)
The capacitance change should be measured after 5 min.
at each specified temp. stage.
Capacitance value as a reference is the value in step 3.
-750+120/-347
ppm/°C (Temp.Range:-55 to +25℃)
Step
1
2
3
4
5
Temperature(C)
Reference Temp.+/-2
Min.Operating Temp. +/-3
Reference Temp. +/-2
Max.Operating Temp. +/-3
Reference Temp. +/-2
Ste
Temp
8
Vibration
Appearance
Capacitance
Q
No defects or abnormalities.
Within the specified initial value.
Within the specified initial value.
Solder the capacitor on the test substrate A shown in "Complement of Test
method”.
Kind of Vibration
Total amplitude
:
:
A simple harmonic motion
10Hz to 55Hz to 10Hz (1min)
1.5mm
This motion should be applied for a period of 2h in each 3 mutually
perpendicular directions(total of 6h).
9
Solderability
95% of the terminations is to be soldered evenly and
continuously.
Test Method
Preheat
Solder
Solder Temp.
Immersion time
:
:
:
:
:
Solder bath method
Solution of rosin ethanol 25(wt)%
80℃ to 120℃ for 10s to 30s
Sn-3.0Ag-0.5Cu (Lead Free Solder)
245+/-5℃
2+/-0.5s
25+/-2.5mm/s.
Solder bath method
Sn-3.0Ag-0.5Cu (Lead Free Solder)
260+/-5℃
:
:
10+/-1s
25+/-2.5mm/s.
24+/-2h at room condition*.
GRM31 size max.: 120℃ to 150℃ for 1 min
GRM32 size min. : 100℃ to 120℃ for 1 min
and 170℃ to 200℃ for 1 min
Flux :
Immersing in speed :
10 Resistance
to
Soldering
Heat
Capacitance
Change
Q
I.R.
Within the specified initial value.
Within the specified initial value.
Within +/-2.5% or +/-2.5pF (Whichever is larger)
Appearance
No defects or abnormalities.
Test Method
Solder
Solder Temp.
Immersion time
Exposure Time
Preheat
Voltage proof No defects.
:
:
:
Immersing in speed :
:
*Room Condition : Temperature:15 to 35°C, Relative humidity:45 to 75%, Atmosphere pressure:86 to 106kPa
JEMCGS-04233B
2
No
Item
Specification
No removal of the terminations or other defect
should occur.
Test Method
(Ref. Standard:JIS C 5101, IEC60384）
Solder the capacitor on the test substrate A shown in "Complement of Test
method”.
11 Adhesive Strength
of Termination
10N, 10+/-1s
Applied Direction : In parallel with the test substrate and vertical with the
capacitor side.
12 Substrate
Bending test
No defects or abnormalities.
Solder the capacitor on the test substrate B shown in "Complement of Test
method”.
Then apply the force in the direction shown in “Test Method of Substrate
Bending test” of “Complement of Test method”.
Flexure
Holding Time
Soldering Method
13 Temperature
Sudden Change
Capacitance
Change
Step
1
Temp.(C)
Min.Operating Temp.+0/-3
Room Temp
Max.Operating Temp.+3/-0
Room Temp
:
:
:
1mm
5+/-1s
Reflow soldering
Appearance
No defects or abnormalities.
Fix the capacitor to the supporting Test substrate A (glass epoxy board)
shown in “Complement of Test method”.
Perform the 5 cycles according to the four heat treatments
Within +/-2.5% or +/-2.5pF (Whichever is larger)
shown in the following table.
Time
(min)
30+/-3
2 to 3
30+/-3
2 to 3
Q
500 min.
2
3
I.R.
Within the specified initial value.
4
Exposure Time
Voltage proof No defects.
:
24+/-2h at room condition*.
14
Humidity
(Steady state)
Appearance
Capacitance
Change
Q
I.R.
No defects or abnormalities.
Within +/-5% or +/-5pF (Whichever is larger)
Fix the capacitor to the supporting Test substrate A (glass epoxy board)
shown in “Complement of Test method”.
Test Temperature
Test Humidity
Test Time
:
:
:
:
40+/-2℃
90% to 95%RH
500+24/-0h
24+/-2h at room condition*.
350 min.
More than 1000MΩ or 10MΩ・μF
(Whichever is smaller)
Exposure Time
Voltage proof No defects.
15 Durability
Appearance
No defects or abnormalities.
Fix the capacitor to the supporting Test substrate A (glass epoxy board)
shown in “Complement of Test method”.
Test Temperature
:
:
:
Max. Operating Temp. +/-3℃
1000+48/-0h
150% of the rated voltage
(Rated
voltage:DC200V,DC250V)
120% of the rated voltage
Capacitance
Change
Within +/-3% or +/-3pF (Whichever is larger)
Test Time
Applied Voltage
Q
350 min.
(Rated
voltage:DC500V,DC630V,DC1kV,DC2kV)
(Rated
voltage(7U only):DC3.15kV)
I.R.
More than 1000MΩ or 10MΩ・μF
(Whichever is smaller)
Charge/discharge current : 50mA max.
Exposure Time
:
24+/-2h at room condition*.
Voltage proof No defects.
*Room Condition : Temperature:15 to 35°C, Relative humidity:45 to 75%, Atmosphere pressure:86 to 106kPa
JEMCGS-04233B
3
Complement of Test Method
1.Test substrate
The test substrate should be Substrate A or Substrate B as described in “Specifications and Test methods”.
The specimen should be soldered by the conditions as described below.
Soldering Method : Reflow soldering
Solder : Sn-3.0Ag-0.5Cu
(1) Test Substrate A
½Land
Dimensions
Chip Capacitor
Type
Land
b
½Material
a
Solder Resist
GRM18
GRM21
GRM31
GRM32
GRM42
GRM43
GRM52
GRM55
a
1.0
1.2
2.2
2.2
3.5
3.5
4.5
4.5
Dimension (mm)
b
3.0
4.0
5.0
5.0
7.0
7.0
8.0
8.0
c
1.2
1.65
2.0
2.9
2.4
3.7
3.2
5.6
c
: Glass Epoxy Board
½Thickness
: 1.6mm
½Thickness
of copper foil : 0.035mm
(1) Test Substrate B
a
Type
GRM18
GRM21
GRM31
GRM32
GRM42
GRM43
GRM52
GRM55
(unit : mm)
d
c
(f4.5)
b
100
1.6
Copper foil
Solder resist
½Material
: Glass Epoxy Board
½Thickness
of copper foil : 0.035mm
2. Test Method of Substrate Bending test
a) Support state
(b) Test state
a
1.0
1.2
2.2
2.2
3.5
3.5
4.5
4.5
Dimension of pettern (mm)
b
c
3.0
1.2
4.0
1.65
5.0
2.0
5.0
2.9
7.0
2.4
7.0
3.7
8.0
3.2
8.0
5.6
d
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
40
Test
Substrate
B
20
50 min.
b
Test Substrate B
a
Capacitor
Support stand(f5)
45+/-2
45+/-2
Test stand
Support stand
Pressure stick
(unit : mm)
a:+/-2 gap between support stand center and test stand
·Material of Test stand and pressure stick
b:+/-5
gap between support stand center and test stand center
The
material shoud be a metal where a remarkable transformation and the distortion are not caused even if it is pressurized.
·Pressurizing speed
The
pressurizing speed is pressurized at the speed of about 1mm/s until the flexure reaches a regulated value.
Pressure stick
F
Capacitor
R5
L
45
45
Support
Support
stand
JEMCGS-04233B
4
Package
(1) Appearance of taping
(a) Paper Tape
Bottom Tape (Thickness: Around 50m) is attached below Base Tape with sprocket and put Top Tape
(Thickness: Around 50m) on capacitor.
(b) Plastic Tape
Cover Tape (Thickness: Around 60m) is put on capacitor on Base Tape (Blister carrier Tape).
(c) The sprocket holes are to the right as the Tape is pulled toward the user.
(2) Packed chips
Capacitor
(3) Dimensions of Tape
(a) Type A (Dimensions of chip : Apply to 1.6x0.8 , 2.0x1.25 , 3.2x1.6 , 3.2x2.5)
1.75±0.1
f
1.5+0.1/-0
4.0±0.1
4.0±0.1
(Plastic Tape)
0.25±0.1
3.5±0.05
(Paper Tape)
2.0±0.05
8.0±0.3
B
A
2.5max.
1.1max.
(Unit : mm)
Dimensions of chip
[L×W]
1.6×0.8
2.0×1.25
3.2×1.6
3.2×2.5
A*
1.05
1.45
2.0
2.9
B*
1.85
2.25
3.6
3.6
Dimensions
of A,B : Nominal value
(b) Type B (Dimensions of chip : Apply to 4.5x2.0)
据外媒报道，萨里大学（University of Surrey）的研究人员开发出一种无需依赖GPS即可在人口密集的城市地区精确定位设备位置的人工智能系统。该系统可将定位误差从734米缩小到22米以内，这对于自动驾驶汽车和救援车辆等技术的发展意义重大。 图片来源： 萨里大学 在发表于《IEEE Robotics and Automation Letters》的论文中，研究人员介绍了PEn...[详细]
国产芯片交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
