Chip Monolithic Ceramic Capacitor for General
GRM188R71H681KA01_ (0603, X7R:EIA, 680pF, DC50V)
_: packaging code
1.Scope
This product specification is applied to Chip Monolithic Ceramic Capacitor used for General Electronic equipment.
Reference Sheet
2.MURATA Part NO. System
(Ex.)
GRM
18
(1)L/W
Dimensions
8
(2)T
Dimensions
R7
(3)Temperature
Characteristics
1H
(4)Rated
Voltage
681
K
A01
D
(5)Nominal (6)Capacitance
Tolerance
Capacitance
(7)Murata’s
(8)Packaging
Control Code
Code
3. Type & Dimensions
(1)-1 L
1.6±0.1
(1)-2 W
0.8±0.1
(2) T
0.8±0.1
e
0.2 to 0.5
(Unit:mm)
g
0.5 min.
4.Rated value
(3) Temperature Characteristics
(Public STD Code):X7R(EIA)
Temp. coeff
Temp. Range
or Cap. Change
(Ref.Temp.)
(4)
Rated
Voltage
(6)
(5) Nominal
Capacitance
Capacitance
Tolerance
Specifications and Test
Methods
(Operating
Temp. Range)
-15 to 15 %
-55 to 125 °C
(25 °C)
DC 50 V
680 pF
±10 %
-55 to 125 °C
5.Package
mark
D
J
(8) Packaging
f180mm
Reel
PAPER W8P4
f330mm
Reel
PAPER W8P4
Packaging Unit
4000 pcs./Reel
10000 pcs./Reel
Product specifications in this catalog are as of Feb.28,2016,and are subject to change or obsolescence without notice.
Please consult the approval sheet before ordering.
Please read rating and !Cautions first.
GRM188R71H681KA01-01
1
■
Specifications and Test Methods
Specification
No
1
Item
Rated Voltage
Temperature
Compensating Type
Shown in Rated value.
High Dielectric
Constant Type
Test Method
(Ref. Standard:JIS C 5101, IEC60384）
The rated voltage is defined as the maximum voltage
which may be applied continuously to the capacitor.
When AC voltage is superimposed on DC voltage,
V
P-P
or V
O-P
, whichever is larger, should be maintained
within the rated voltage range.
2
3
4
Appearance
Dimension
Voltage proof
No defects or abnormalities.
Within the specified dimensions.
No defects or abnormalities.
Visual inspection.
Using calipers. (GRM02 size is based on Microscope)
Measurement Point
Test Voltage
: Between the terminations
: 300% of the rated voltage
(Temperature compensating type)
250% of the rated voltage
(High dielectric constant type)
Applied Time
5
Insulation Resistance(I.R.)
C≦0.047µF:More than 10000MΩ
C＞0.047µF:More than 500Ω·F
C:Nominal Capacitance
: 1s to 5 s
Charge/discharge current : 50mA max.
Measurement Point
: Between the terminations
Measurement Voltage :
Charging Time
DC Rated Voltage
: 2 min
Charge/discharge current : 50mA max.
Measurement Temperature : Room Temperature
6
Capacitance
Shown in Rated value.
Measurement Temperature : Room Temperature
(1)Temperature Compensating Type
7
Q or Dissipation Factor (D.F.)
30pF and over:Q≧1000
30pF and below:Q≧400+20C
C:Nominal Capacitance(pF)
W.V.:100Vdc :0.025max.(C<0.068µF)
:0.05max.(C≧0.068µF)
W.V.:50/35/25Vdc :0.025max.
W.V.:16/10Vdc :0.035max.
W.V.:6.3/4Vdc :0.05max.(C<3.3µF)
:0.1max. (C≧3.3µF)
Capacitance
C≦1000pF
C＞1000pF
Frequency
1.0+/-0.1MHz
1.0+/-0.1kHz
Voltage
0.5 to 5.0Vrms
1.0+/-0.2Vrms
(2)High Dielectric Constant Type
Capacitance
C≦10μF
C＞10μF
Frequency
1.0+/-0.1kHz
120+/-24Hz
Voltage
1.0+/-0.2Vrms
0.5+/-0.1Vrms
8
Temperature
Characteristics
of Capacitance
No bias
Nominal values of the
temperature coefficient is
shown in Rated value.
But,the Capacitance Change
under 20℃ is shown
in Table A.
B1,B3 : Within +/-10%
(-25°C to +85°C)
R1,R7 : Within +/-15%
(-55°C to +125°C)
R6
C7
C8
: Within +/-15%
(-55°C to +85°C)
: Within +/-22%
(-55°C to +125°C)
: Within +/-22%
(-55°C to +105°C)
L8
: Within +/-15%
(-55°C to +125°C)
: Within +15/-40%
(+125°C to +150°C)
The capacitance change should be measured after 5 min
at each specified temp. stage.
In case of applying voltage, the capacitance change should be
measured after 1 min with applying voltage in equilibration of
each temp. stage.
Capacitance value as a reference is the value in step 3.
(1)Temperature Compensating Type
The capacitance drift is calculated by dividing the differences
between the maximum and minimum measured values in the
step 1,3 and 5 by the cap. value in step 3.
Step
1
2
3
4
5
Temperature(C)
Reference Temp.+/-2
Min. Operating Temp.+/-3
Reference Temp.+/-2
Max. Operating Temp.+/-3
Reference Temp.+/-2
Capacitance Drift *
Within +/-0.2% or +/-0.05pF
(Whichever is larger.)
*Not apply to 1X/25V
50% of
the rated
voltage
-
B1 : Within +10/-30%
R1 : Within +15/-40%
(2)High Dielectric Constant Type
Step
1
2
3
4
5
6
7
8
Temperature(C)
Reference Temp.+/-2
Min.Operating Temp.+/-3
Reference Temp.+/-2
Max.Operating Temp.+/-3
Reference Temp.+/-2
Min.Operating Temp.+/-3
Reference Temp.+/-2
Max.Operating Temp.+/-3
50% of
the rated voltage
(For B1,R1)
Applying Voltage(VDC)
No bias
· Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10°C for 1h and then
let sit for 24+/-2h at room temperature, then measure.
9
Adhesive Strength
of Termination
No removal of the terminations or other defect
should occur.
GRM02
GRM03
GRM15/GRM18
GRM21/GRM31/GRM32
Solder the capacitor on the test substrate shown in Fig.3.
Type
Applied Force(N)
1
2
5
10
Holding Time
: 10+/-1s
the capacitor side.
Applied Direction : In parallel with the test substrate and vertical with
JEMCGS-0001U
2
Specification
No
10 Vibration
Item
Appearance
Capacitance
Q or D.F.
Temperature
Compensating Type
No defects or abnormalities.
Within the specified initial value.
Within the specified initial value.
High Dielectric
Constant Type
Test Method
(Ref. Standard:JIS C 5101, IEC60384）
Solder the capacitor on the test substrate shown in Fig.3.
Kind of Vibration
Total amplitude
: A simple harmonic motion
10Hz to 55Hz to 10Hz (1min)
: 1.5mm
This motion should be applied for a period of 2h in each 3 mutually
perpendicular directions(total of 6h).
11 Substrate
Bending test
Appearance
Capacitance
Change
No defects or abnormalities.
Within +/-5% or +/-0.5pF
(Whichever is larger)
Within +/-10%
Solder the capacitor on the test substrate shown in Fig.1.
Pressurization method : Shown in Fig.2
Flexure
Holding Time
Soldering Method
:
1mm
:
5+/-1s
: Reflow soldering
: Solder bath method
Solution of rojin ethanol 25(wt)%
: 80℃ to 120℃ for 10s to 30s
: Sn-3.0Ag-0.5Cu
: 245+/-5℃
: 2+/-0.5s
12 Solderability
95% of the terminations is to be soldered evenly and continuously.
Test Method
Flux
Preheat
Solder
Solder Temp.
Immersion time
13 Resistance to
Soldering Heat
Appearance
Capacitance
Change
Q or D.F.
I.R.
No defects or abnormalities.
Within +/-2.5% or +/- 0.25pF
(Whichever is larger)
Within the specified initial value.
Within the specified initial value.
Within +/-7.5%
<GRM03 size min.>
Test Method
Solder
Solder Temp.
Immersion time
Exposure Time
Preheat
: Solder bath method
: Sn-3.0Ag-0.5Cu
: 270+/-5℃
: 10+/-0.5s
: 24+/-2h
: GRM31 size max.: 120℃ to 150℃ for 1 min
GRM32 size
: 100℃ to 120℃ for 1 min
and 170℃ to 200℃ for 1 min
· Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10°C for 1h and then
let sit for 24+/-2h at room temperature, then measure.
<GRM02 size only>
Test Method
Solder
Solder Temp.
Reflow Time
Test Substrate
Exposure Time
Preheat
: Reflow soldering (hot plate)
: Sn-3.0Ag-0.5Cu
: 270+/-5℃
: 10+/-0.5s
: Glass epoxy PCB
: 24+/-2h
: 120℃ to 150℃ for 1 min
Voltage proof No defects.
· Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10°C for 1h and then
let sit for 24+/-2h at room temperature, then measure.
14 Temperature
Appearance
No defects or abnormalities.
Within +/-2.5% or+/- 0.25pF
(Whichever is larger)
Within the specified initial value.
Step
Temp.(C)
Min.Operating Temp.+0/-3
Room Temp.
Max.Operating Temp.+3/-0
Room Temp
Time (min)
30+/-3
2 to 3
30+/-3
2 to 3
Solder the capacitor on the test substrate shown in Fig.3.
Within +/-7.5%
Perform the five cycles according to the four heat treatments
shown in the following table.
Sudden Change Capacitance
Change
Q or D.F.
I.R.
Within the specified initial value.
1
2
Voltage proof No defects.
3
4
Exposure Time
: 24+/-2h
· Initial measurement for high dielectric constant type
Perform a heat treatment at 150+0/-10°C for 1h and then
let sit for 24+/-2h at room temperature, then measure.
JEMCGS-0001U
3
Specification
No
15 High
Temperature
High Humidity
(Steady)
Capacitance
Change
Q or D.F.
Within +/-7.5% or +/-0.75pF
(Whichever is larger)
30pF and over:Q≧200
30pF and below
:Q≧100+10C/3
C:Nominal Capacitance(pF)
W.V.:100Vdc :0.05max.(C<0.068µF)
W.V.:50/35/25Vdc :0.05max.
W.V.:16/10Vdc :0.05max.
W.V.:6.3/4Vdc :0.075max.(C<3.3µF)
:0.125max.(C≧3.3µF)
I.R.
More than 500MΩ or 25Ω·F (Whichever is smaller)
Within +/-12.5%
Item
Appearance
Temperature
Compensating Type
No defects or abnormalities.
High Dielectric
Constant Type
Test Method
(Ref. Standard:JIS C 5101, IEC60384）
Solder the capacitor on the test substrate shown in Fig.3.
Test Temperature
Test Humidity
Test Time
Applied Voltage
Exposure Time
: 40+/-2℃
: 90%RH to 95%RH
: 500+/-12h
: DC Rated Voltage
: 24+/-2h
:0.075max.(C≧0.068µF) Charge/discharge current : 50mA max.
16 Durability
Appearance
Capacitance
Change
Q or D.F.
No defects or abnormalities.
Within +/-3% or +/-0.3pF
(Whichever is larger)
30pF and over:Q≧350
10pF and over
30pF and below
: Q≧275+5C/2
10pF and below
: Q≧200+10C
C:Nominal Capacitance (pF)
W.V.:100Vdc :0.05max.(C<0.068µF)
W.V.:50/35/25Vdc :0.05max.
W.V.:16/10Vdc :0.05max.
W.V.:6.3/4Vdc :0.075max.(C<3.3µF)
Within +/-12.5%
Solder the capacitor on the test substrate shown in Fig.3.
Test Temperature
Test Time
Applied Voltage
:0.075max.(C≧0.068µF) Exposure Time
: Max. Operating Temp. +/-3℃
: 1000+/-12h
: 200% of the rated voltage
: 24+/-2h
Charge/discharge current : 50mA max.
½Initial
measurement for high dielectric constant type
Apply 200% of the rated DC voltage at the max. operating
then measure.
:0.125max.(C≧3.3µF) temp. +/-3°C for 1h and then let sit for 24+/-2h at room temperature,
I.R.
More than 1,000MΩ or 50Ω·F (Whichever is smaller)
Table A
Char.
2C/0C
3C
4C
2P
3P
4P
2R
3R
4R
2S
3S
4S
2T
3T
4T
3U
4U
1X
Max.
0.82
1.37
2.56
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-55℃
Capacitance Change from 20C
-25℃
Min.
Max.
Min.
-0.45
0.49
-0.27
-0.90
0.82
-0.54
-1.88
1.54
-1.13
-
1.32
0.41
-
1.65
0.14
-
2.36
-0.45
-
1.70
0.72
-
2.03
0.45
-
2.74
-0.14
-
2.30
1.22
-
2.63
0.95
-
3.35
0.36
-
3.07
1.85
-
3.40
1.58
-
4.12
0.99
-
4.94
2.84
-
5.65
2.25
-
-
-
(%)
-10℃
Max.
0.33
0.55
1.02
0.88
1.10
1.57
1.13
1.35
1.83
1.54
1.76
2.23
2.05
2.27
2.74
3.29
3.77
-
Min.
-0.18
-0.36
-0.75
0.27
0.09
-0.30
0.48
0.30
-0.09
0.81
0.63
0.24
1.23
1.05
0.66
1.89
1.50
-
JEMCGS-0001U
4
Substrate Bending test
・Test
substrate
Material
: Copper-clad laminated sheets for PCBs
(Glass fabric base, epoxy resin)
Thickness : 1.6mm (GRM02/GRM03/GRM15: t:0.8mm)
Copper foil thickness : 0.035mm
:
Solder resist
(Coat with heat resistant resin for solder)
Land
f4.5
Type
GRM02
GRM03
GRM15
GRM18
GRM21
GRM31
GRM32
a
100
a
0.2
0.3
0.4
1.0
1.2
2.2
2.2
*1,2：2.0±0.05
4.0±0.1
Dimension (mm)
φ1.5
+0.1
c
＊1
＊2
b
-0
0.56
0.23
0.9
0.3
1.5
0.5
Ａ
3.0
1.2
4.0
1.65
0.05以下
5.0
2.0
5.0
2.9
Ｂ
3.5±0.05
40
c
c
1.75±0.1
8.0±0.3
b
t
Fig.1
Kind of Solder
・Test
substrate : Sn-3.0Ag-0.5Cu
Pressurization
・Test
substrate method
(in mm)
20
50 min.
Pressurization
speed
1.0mm/s
tor
R5
Pressurize
Support
Capacitance meter
45
45
Flexure
Fig.2
(in mm)
Adhesive Strength of Termination, Vibration, Temperature Sudden Change, Resistance to Soldering Heat (Reflow method)
High Temperature High Humidity(Steady) , Durability
・Test
substrate
Material
: Copper-clad laminated sheets for PCBs
(Glass fabric base, epoxy resin)
Thickness : 1.6mm or 0.8mm
Copper foil thickness : 0.035mm
Kind of Solder
・Test
substrate : Sn-3.0Ag-0.5Cu
Land Dimensions
・Test
substrate
Chip Capacitor
Land
Type
GRM02
GRM03
GRM15
GRM18
GRM21
GRM31
GRM32
Fig.3
b
a
Solder Resist
a
0.2
0.3
0.4
1.0
1.2
2.2
2.2
Dimension (mm)
b
0.56
0.9
1.5
3.0
4.0
5.0
5.0
c
0.23
0.3
0.5
1.2
1.65
2.0
2.9
JEMCGS-0001U
c
5
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
