.............................................................................................................................................................. –0.3V to +76V
V
DD
, V
PVDD
.................................................................................................................................................. –0.3V to +6V
V
FREQ
, V
ILIM
, V
EN
............................................................................................................................–0.3V to (V
IN
+ 0.3V)
V
SW
(DC) .........................................................................................................................................–0.3V to (V
................................................................................................................................................. –0.3V to +6V
V
BST
........................................................................................................................................................... –0.3V to +82V
V
PG
................................................................................................................................................. –0.3V to (V
DD
+ 0.3V)
V
FB
................................................................................................................................................. –0.3V to (V
DD
+ 0.3V)
PGND to AGND ........................................................................................................................................ –0.3V to +0.3V
) .................................................................................................................................. +4.5V to +75V
Enable Input (V
EN
) ..............................................................................................................................................0V to V
IN
V
SW
, V
FREQ
, V
ILIM
...............................................................................................................................................0V to V
IN
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
‡ Notice:
The device is not guaranteed to function outside its operating ratings.
Note 1:
Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 kΩ in series
with 100 pF.
2017 Microchip Technology Inc.
DS20005899A-page 3
MIC2103/4
TABLE 1-1:
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
V
IN
= 48V, V
OUT
= 5V, V
BST
– V
SW
= 5V; T
A
= +25°C, unless noted.
Bold
values indicate
–40°C
≤
T
J
≤
+125°C.
Note 1
Parameter
Power Supply Input
Input Voltage Range
Quiescent Supply Current
Shutdown Supply Current
V
DD
Supply
V
DD
Output Voltage
V
DD
UVLO Upper Threshold
V
DD
UVLO Hysteresis
Load Regulation
Reference
Feedback Reference Voltage
FB Bias Current
Enable Control
EN Logic Level High
EN Logic Level Low
EN Hysteresis
EN Bias Current
Oscillator
Switching Frequency
Maximum Duty Cycle
Minimum Duty Cycle
Minimum Off-Time
Soft-Start
Soft-Start Time
Short-Circuit Protection
Current-Limit Threshold
Short-Circuit Threshold
Current-Limit Source Current
Short-Circuit Source Current
FET Drivers
DH, DL Output Low Voltage
V
LO
—
V
PVDD
– 0.1V
or
V
BST
–
0.1V
—
—
—
—
0.1
V
I
SINK
= 10 mA
V
CL
V
CL(FB)
I
CL
I
CL(FB)
–30
–23
60
27
–14
–7
80
36
0
9
100
47
mV
mV
µA
µA
V
FB
= 0.79V
V
FB
= 0V
V
FB
= 0.79V
V
FB
= 0V
t
SS
—
5
—
ms
—
f
SW
D
MAX
D
MIN
t
OFF(MIN)
400
—
—
—
140
600
300
85
0
200
750
—
—
—
260
kHz
%
%
ns
V
FREQ
= V
IN
V
FREQ
= 50%V
IN
—
V
FB
> 0.8V
—
V
EN(HI)
V
EN(LO)
V
EN(HYS)
I
EN
1.8
—
—
—
—
—
200
23
—
0.6
—
40
V
V
mV
µA
—
—
—
V
EN
= 48V
V
FB
I
FB
0.792
0.784
—
0.8
0.8
5
0.808
0.816
500
V
nA
T
J
= 25°C (±1.0%)
–40°C
≤
T
J
≤
+125°C (±2%)
V
FB
= 0.8V
V
DD
V
DDUV,R
∆V
DDUV
∆V
DD,LOAD
Symbol
V
IN
I
Q
I
SHDN
Min.
4.5
—
—
—
4.8
3.8
—
0.6
Typ.
—
400
2.1
0.1
5.2
4.2
400
2
Max.
75
750
3
10
5.4
4.6
—
3.6
Units
V
µA
mA
µA
V
V
mV
%
Conditions
Note 2
MIC2103, V
FB
= 1.5V
MIC2104, V
FB
= 1.5V
SW unconnected, V
EN
= 0V
V
IN
= 7V to 75V, I
DD
= 10 mA
V
DD
rising
—
I
DD
= 0 mA to 40 mA
DH, DL Output High Voltage
V
HI
—
—
V
I
SOURCE
= 10 mA
DH On-Resistance, High
State
R
ON(DHH)
2.1
1.8
1.8
3.3
3.3
3.3
Ω
Ω
Ω
—
—
—
DH On-Resistance, Low State R
ON(DHL)
DL On-Resistance, High State R
ON(DLH)
DS20005899A-page 4
2017 Microchip Technology Inc.
MIC2103/4
TABLE 1-1:
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
V
IN
= 48V, V
OUT
= 5V, V
BST
– V
SW
= 5V; T
A
= +25°C, unless noted.
Bold
values indicate
–40°C
≤
T
J
≤
+125°C.
Note 1
Parameter
DL On-Resistance, Low State
SW, BST Leakage Current
Power Good
Power Good Threshold
Voltage
Power Good Hysteresis
Power Good Delay Time
Power Good Low Voltage
Thermal Protection
Overtemperature Shutdown
Threshold
Overtemperature Shutdown
Hysteresis
Note 1:
2:
T
SD
T
SD(HYS)
—
—
160
4
—
—
°C
°C
T
J
rising
—
V
PGTH
V
PGHYS
t
d(PG)
V
PG(LO)
85
—
—
—
90
6
100
70
95
—
—
200
%V
OUT
%V
OUT
µs
mV
Sweep V
FB
from Low to High
Sweep V
FB
from High to Low
Sweep V
FB
from Low to High
V
FB
< 90% x V
NOM
, I
PG
= 1 mA
Symbol
R
ON(DLL)
I
LEAK
Min.
—
—
Typ.
1.2
—
Max.
2.3
50
Units
Ω
µA
Conditions
—
—
Specification for packaged product only
The application is fully functional at low V
DD
(supply of the control section) if the external MOSFETs have
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