(normally-off) transistor uses a vertical DMOS structure
and a well-proven silicon-gate manufacturing process.
This combination produces a device with the power
handling capabilities of bipolar transistors and the high
input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally induced secondary breakdown.
Microchip’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications
where very low threshold voltage, high breakdown
voltage, high input impedance, low input capacitance,
and fast switching speeds are desired.
Applications
•
•
•
•
•
•
•
Logic-Level Interfaces (Ideal for TTL and CMOS)
Solid-State Relays
Battery-Operated Systems
Photovoltaic Drives
Analog Switches
General Purpose Line Drivers
Telecommunication Switches
Package Type
3-lead TO-92
(Top view)
DRAIN
SOURCE
GATE
See
Table 3-1
for pin information.
2020 Microchip Technology Inc.
DS20005934A-page 1
TN0604
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
Drain-to-Source Voltage ...................................................................................................................................... BV
DSS
Drain-to-Gate Voltage ......................................................................................................................................... BV
DGS
Gate-to-Source Voltage ......................................................................................................................................... ±20V
Operating Ambient Temperature, T
A
................................................................................................... –55°C to +150°C
Storage Temperature, T
S
...................................................................................................................... –55°C to +150°C
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only, and functional operation of the device at those or any other conditions above those
indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for
extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications:
T
A
= 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless
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