Thyristors
EV Series 0.8 Amp Sensitive SCRs
SxX8xSx Series
Description
RoHS
New device series offers high static dv/dt and lower turn
off (t
q
) sensitive SCR with its small die planar construction
design. It is specifically designed for GFCI (Ground Fault
Circuit Interrupter) and Gas Ignition applications. All
SCRs junctions are glass-passivated to ensure long term
reliability and parametric stability.
Features
• RoHS compliant and
Halogen-Free
• Thru-hole and surface
mount packages
Main Features
Symbol
I
T(RMS)
V
DRM
/ V
RRM
I
GT
Value
0.8
400 to 800
5 to 200
Unit
A
V
μA
• High dv/dt noise immunity
• Improved turn-off time (t
q
)
< 25 μsec
• Sensitive gate for direct
microprocessor interface
• Surge current
capability > 10Amps
• Blocking voltage
( V
DRM
/ V
RRM
)
capability - up to 800V
Schematic Symbol
A
Applications
The SxX8xSx EV series is specifically designed for
GFCI (Ground Fault Circuit Interrupter) and gas ignition
applications.
G
K
Absolute Maximum Ratings
Symbol
I
T(RMS)
RMS on-state current (full sine wave)
Parameter
TO-92
SOT-89
SOT-223
TO-92
I
T(AV)
Average on-state current
SOT-89
SOT-223
TO-92
SOT-89
SOT-223
t
p
= 10 ms
t
p
= 8.3 ms
TO-92
SOT-89
SOT-223
t
p
= 10 μs
—
—
—
T
C
= 55°C
T
C
= 60°C
T
L
= 60°C
T
C
= 55°C
T
C
= 60°C
T
L
= 60°C
F= 50Hz
F= 60Hz
F = 50 Hz
F = 60 Hz
T
J
= 125°C
T
J
= 125°C
T
J
= 125°C
—
—
Value
0.8
0.8
0.8
0.51
0.51
0.51
8
10
0.32
0.41
50
1.0
0.1
-40 to 150
-40 to 125
Unit
A
A
A
A
A
A
A
A
A
2
s
A
2
s
A/µs
A
W
°C
°C
I
TSM
I
2
t
di/dt
I
GM
P
G(AV)
T
stg
T
J
Non repetitive surge peak on-state current
(Single cycle, T
J
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current I
G
= 10mA
Peak Gate Current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
Description
Test Conditions
V
D
= 6V
R
L
= 100
Ω
V
D
= 6V
R
L
= 100
Ω
I
RG
= 10μA
R
GK
= 1 KΩ
Initial Current = 20mA
T
J
= 125°C
V
D
= V
DRM
/V
RRM
Exp. Waveform
R
GK
=1 kΩ
V
D
= V
DRM
R
GK
=1 kΩ
T
J
= 25°C
T
J
= 25°C @ 600 V
R
GK
=1 kΩ
I
G
=10mA
PW = 15μsec
I
T
= 1.6A(pk)
Limit
MIN.
MAX.
MAX.
MIN.
MAX.
Value
SxX8yS1
0.5
5
SxX8yS2
1
50
0.8
5
5
SxX8yS
15
200
Unit
μA
μA
V
V
mA
I
GT
V
GT
V
GRM
I
H
DC Gate Trigger Current
DC Gate Trigger Voltage
Peak Reverse Gate Voltage
Holding Current
(dv/dt)s
Critical Rate-of-Rise of
Off-State Voltage
MIN.
75
V/μs
V
GD
t
q
t
gt
Gate Non-Trigger Voltage
Turn-Off Time
Turn-On Time
MIN.
MAX.
TYP
.
30
2.0
0.2
25
2.0
25
2.0
V
μs
μs
Note: x = voltage, y = package
Static Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
V
TM
I
DRM
Description
Peak On-State Voltage
Off-State Current, Peak Repetitive
Test Conditions
I
TM
= 1.6A (pk)
T
J
= 25°C @ V
D
= V
DRM
R
GK
=1 kΩ
T
J
= 125°C @ VD = V
DRM
R
GK
=1 kΩ
Limit
MAX.
MAX.
MAX.
Value
1.70
3
500
Unit
V
μA
μA
Thermal Resistances
Symbol
Description
Test Conditions
TO-92
R
th(j-c)
Junction to case (AC)
I
T
= 0.8A
(RMS)1
SOT-223
SOT-89
TO-92
R
th(j-a)
Junction to ambient
I
T
= 0.8A
(RMS)1
SOT-223
SOT-89
1
Value
75
30
50
150
60
90
Unit
°C/ W
°C/ W
°C/W
°C/ W
°C/ W
°C/W
60Hz AC resistive load condition, 100% conduction.
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Figure 1: Normalized DC Gate Trigger Current For All
Quadrants vs. Junction Temperature
2.0
Figure 2: Normalized DC Holding Current
vs. Junction Temperature
4.0
I
GT
(T
J
= 25°C)
1.5
3.0
1.0
I
H
(T
J
= 25°C)
I
GT
I
H
-40
-15
+25
+65
+105
+125
2.0
Ratio of
0.5
Ratio of
1.0
0.0
0.0
-55
-35
-15
+5
+25
+45
+65
+85
+105
+125
Junction Temperature (T
J
) - °C
Junction Temperature (T
J
) - °C
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
1.0
0.9
Figure 4: On-State Current vs. On-State
Voltage (Typical)
10
8
6
4
2
0
0.9
1.3
1.7
2.1
2.5
2.9
3.3
3.7
Instantaneous On-state Voltage (VT) – Volts
Instantaneous On-state Current (IT) – Amps
Gate Trigger Voltage (V
GT
) - V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
SxX8xS1
SxX8xS
SxX8xS2
Junction Temperature (T
J
) - °C
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
0.8
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current
130
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
0.1
Maximum Allowable Case Temperature
(T
C
) -
o
C
Average On-state Power Dissipation
[P
D(AV)
] - Watts
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
o
120
110
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
o
CASE TEMPERATURE: Measured as
shown on dimensional drawings
SOT-223 & SOT-89
100
90
TO-92
80
70
60
50
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
RMS On-state Current [I
T(RMS)
] - Amps
RMS On-state Current [I
T(RMS)
] - Amps
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Figure 7-1: Typical DC Gate Trigger Current with R
GK
vs.
Junction Temperature for S6X8BS
Figure 7-2: Typical DC Gate Trigger Current with R
GK
vs.
Junction Temperature for S8X8ESRP
Figure 8-1: Typical DC Holding Current with RGK vs.
Junction Temperature for S6X8BS
Figure 7-2: Typical DC Holding Current with R
GK
vs.
Junction Temperature for S8X8ESRP
Figure 9-1: Typical DC Static dv/dt with R
GK
vs.
Junction Temperature for S6X8BS
Figure 9-2: Typical DC Static dv/dt with R
GK
vs.
Junction Temperature for S8X8ESRP
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
Thyristors
EV Series 0.8 Amp Sensitive SCRs
Figure 10-1: Typical DC turn off time with R
GK
vs.
Junction Temperature for S6X8BS
Figure 10-2: Typical DC turn off time with R
GK
vs.
Junction Temperature for S8X8ESRP
Figure 11: Surge Peak On-State Current vs. Number of Cycles
20
Peak Surge (Non-repetitive) On-State
Current (I
T S M
) – Amps .
10
9
8
7
6
5
4
3
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [I
T(RMS)
]: Max Rated Value at
Specific Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state rated value.
0.8
2
AD
evi
ces
1
1
2
3
4
5 6 7 8 9 10
20
30 40
60 80 100
200
300 400 600
1000
Surge Current Duration - Full Cycle
© 2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 01/16/18
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