Specifications are subject to change without notice.
Revised: 08/30/17
Thyristors
Surface Mount – 800V > BTA08-800CW3G
Maximum Ratings
(T
J
= 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, T
J
= -40° to 125°C)
BTA08−800CW3G
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T
C
= 80°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, T
C
= 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State Voltage (T
J
= 25°C, t = 10ms)
V
DRM
,
V
RRM
800
I
T
8.0
90
36
V
DSM
/ V
RSM
+100
A
A
A²sec
V
V
(RMS)
I
TSM
I
2
t
V
DSM
/ V
RSM
Peak Gate Current (T
J
= 125°C, t = 20ms)
Peak Gate Power (Pulse Width ≤ 1.0 µs, T
C
= 80°C)
Average Gate Power (T
J
= 125°C)
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, T
A
= 25°C)
I
GM
P
G(AV)
P
G(AV)
T
J
T
stg
V
iso
4.0
20
1.0
-40 to +125
-40 to +125
2500
W
W
W
°C
°C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
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