BTA16-600BW3G,
BTA16-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
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Blocking Voltage to 800 V
On-State Current Rating of 16 A RMS at 80°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt
−
1500 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt
−
4.0 A/ms minimum at 125°C
Internally Isolated (2500 V
RMS
)
These are Pb−Free Devices
Rating
Symbol
V
DRM,
V
RRM
600
800
I
T(RMS)
I
TSM
16
170
A
A
Value
Unit
V
1
TRIACS
16 AMPERES RMS
600 thru 800 VOLTS
MT2
G
4
MT1
MARKING
DIAGRAM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Peak Repetitive Off−State Voltage (Note 1)
(T
J
=
−40
to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA16−600BW3G
BTA16−800BW3G
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
C
= 80°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
C
= 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
Non−Repetitive Surge Peak Off−State
Voltage (T
J
= 25°C, t = 10ms)
Peak Gate Current (T
J
= 125°C, t = 20ms)
Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Average Gate Power (T
J
= 125°C)
Operating Junction Temperature Range
Storage Temperature Range
RMS Isolation Voltage
(t = 300 ms, R.H.
≤
30%, T
A
= 25°C)
BTA16−xBWG
AYWW
2
3
TO−220AB
CASE 221A
STYLE 12
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
I
2
t
V
DSM/
V
RSM
I
GM
P
GM
P
G(AV)
T
J
T
stg
V
iso
120
V
DSM/
V
RSM
+100
4.0
20
1.0
−40
to +125
−40
to +150
2500
A
2
sec
V
A
W
W
°C
°C
V
1
2
3
4
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
No Connection
ORDERING INFORMATION
Device
BTA16−600BW3G
BTA16−800BW3G
Package
TO−220AB
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semicon-
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
December, 2008
−
Rev. 1
1
Publication Order Number:
BTA16−600BW3/D
BTA16−600BW3G, BTA16−800BW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Symbol
R
qJC
R
qJA
T
L
Value
2.13
60
260
Unit
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(V
D
= Rated V
DRM
, V
RRM
; Gate Open)
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(I
TM
=
±
22.5 A Peak)
Gate Trigger Current (Continuous dc) (V
D
= 12 V, R
L
= 30
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Holding Current
(V
D
= 12 V, Gate Open, Initiating Current =
±150
mA)
Latching Current (V
D
= 12 V, I
G
= 50 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (V
D
= 12 V, R
L
= 30
W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Non−Trigger Voltage (T
J
= 125°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, T
J
= 125°C, No Snubber)
Critical Rate of Rise of On−State Current
(T
J
= 125°C, f = 120 Hz, I
G
= 2 x I
GT
, tr
≤
100 ns)
Critical Rate of Rise of Off-State Voltage
(V
D
= 0.66 x V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
(dI/dt)
c
dI/dt
dV/dt
4.0
−
1500
−
−
−
−
50
−
A/ms
A/ms
V/ms
V
TM
I
GT
−
−
1.55
V
mA
2.5
2.5
2.5
−
−
−
−
−
50
50
50
60
mA
mA
−
−
−
0.5
0.5
0.5
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
70
90
70
V
1.7
1.1
1.1
V
−
−
−
T
J
= 25°C
T
J
= 125°C
I
DRM
,
I
RRM
mA
−
−
−
−
0.005
2.0
Symbol
Min
Typ
Max
Unit
I
H
I
L
V
GT
V
GD
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BTA16−600BW3G, BTA16−800BW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
Quadrant 3
MainTerminal 2
−
I
H
V
TM
I
RRM
at V
RRM
on state
I
H
V
TM
off state
+ Voltage
I
DRM
at V
DRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
Quadrant I
I
GT
−
(−) MT2
(−) MT2
+ I
GT
Quadrant III
(−) I
GT
GATE
MT1
REF
(+) I
GT
GATE
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
Quadrant IV
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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BTA16−600BW3G, BTA16−800BW3G
125
120
TC, CASE TEMPERATURE (
°
C)
115
110
105
100
95
90
85
80
0
2
6
8
10
12
14
I
T(RMS)
, RMS ON-STATE CURRENT (A)
4
16
α
= 180°
α
= 30 and 60°
α
= 90°
α
= 120°
20
PAV, AVERAGE POWER (WATTS)
18
16
14
12
10
8
6
4
2
0
0
2
6
8
10
12
I
T(RMS)
, ON-STATE CURRENT (A)
4
14
16
α
= 30°
DC
180°
120°
90°
60°
DC
Figure 1. RMS Current Derating
Figure 2. On-State Power Dissipation
1000
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1
Typical @ T
J
= 25°C
Typical @
T
J
=
−40°C
0.1
100
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
Typical @ T
J
= 125°C
0.01
0.1
1
10
100
t, TIME (ms)
1000
1 · 10
4
Figure 4. Thermal Response
10
55
I
H
, HOLD CURRENT (mA)
Typical @
T
J
=
−40°C
1
Typical @ T
J
= 25°C
50
45
40
35
30
25
20
15
10
0.1
0.5
1
1.5
2
2.5
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (V)
3
5
−40 −25 −10
5
20
35 50
65
80
95 110 125
MT2 Negative
MT2 Positive
Typical @ T
J
= 125°C
Figure 3. On-State Characteristics
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Figure
@ T =
−40°C
Typical
5. Hold Current Variation
J
T
J
, JUNCTION TEMPERATURE (°C)
BTA16−600BW3G, BTA16−800BW3G
100
I
GT
, GATE TRIGGER VOLTAGE (mA)
V
D
= 12 V
R
L
= 30
W
Q3
1.8
1.6
1.4
1.2
10
Q1
Q2
1
0.8
0.6
1
−40 −25 −10
Q2
Q3
Q1
V
D
= 12 V
R
L
= 30
W
5
20
35 50
65
80
95 110 125
0.4
−40 −25 −10
5
20
35 50
65
80
95 110 125
Figure 6. Gate Trigger Current Variation
dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/
μ
s)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 7. Gate Trigger Voltage Variation
T
J
, JUNCTION TEMPERATURE (°C)
5000
V
D
= 800 Vpk
T
J
= 125°C
4K
3K
2K
1K
0
10
100
1000
R
G
, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
10000
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
L
L
200 V
RMS
ADJUST FOR
I
TM
, 60 Hz V
AC
TRIGGER
CHARGE
CONTROL
TRIGGER CONTROL
MEASURE
I
1N4007
-
+
MT2
1N914 51
W
G
MT1
CHARGE
200 V
NON‐POLAR
C
L
Note: Component values are for verification of rated (di/dt)
c
. See AN1048 for additional information.
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
c
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