C106 Series
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Glassivated PNPN devices designed for high volume consumer
applications such as temperature, light, and speed control; process and
remote control, and warning systems where reliability of operation is
important.
Features
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•
•
•
•
Glassivated Surface for Reliability and Uniformity
Power Rated at Economical Prices
Practical Level Triggering and Holding Characteristics
Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
•
Sensitive Gate Triggering
•
These are Pb−Free Devices
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Characteristic
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, 50−60 Hz, R
GK
= 1 kW,
T
C
=
−40°
to 110°C)
C106B
C106D, C106D1*
C106M, C106M1*
On-State RMS Current
(180° Conduction Angles, T
C
= 80°C)
Average On−State Current
(180° Conduction Angles, T
C
= 80°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T
J
= +25°C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
v1.0
msec,
T
C
= 80°C)
Forward Average Gate Power
(Pulse Width
v1.0
msec,
T
C
= 80°C)
Forward Peak Gate Current
(Pulse Width
v1.0
msec,
T
C
= 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
Symbol
V
DRM,
V
RRM
200
400
600
I
T(RMS)
I
T(AV)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
−
SCRs
4 A RMS, 200
−
600 Volts
G
A
K
Max
Unit
V
4.0
2.55
20
1.65
0.5
0.1
0.2
−40
to
+110
−40
to
+150
6.0
A
A
A
A
2
s
W
W
A
°C
°C
in. lb.
1. Cathode
2. Anode
3. Gate
TO−225AA
CASE 077
STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENT
YWW
C106xxG
Y
WW
C106xx
xx
G
= Year
= Work Week
= Device Code
= B, D, D1, M, M1
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200F006).
Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink
thermal resistance. Anode lead and heatsink contact pad are common.
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
September, 2011
−
Rev. 10
Publication Order Number:
C106/D
C106 Series
THERMAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
3.0
75
260
Unit
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, R
GK
= 1 kW)
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 3)
(I
TM
= 4 A)
Gate Trigger Current (Continuous dc) (Note 4)
(V
AK
= 6 Vdc, R
L
= 100
W)
Peak Reverse Gate Voltage (I
GR
= 10
mA)
Gate Trigger Voltage (Continuous dc) (Note 4)
(V
AK
= 6 Vdc, R
L
= 100
W)
Gate Non−Trigger Voltage (Continuous dc) (Note 4)
(V
AK
= 12 V, R
L
= 100
W,
T
J
= 110°C)
Latching Current
(V
AK
= 12 V, I
G
= 20 mA, R
GK
= 1 kW)
Holding Current (V
D
= 12 Vdc)
(Initiating Current = 20 mA, R
GK
= 1 kW)
T
J
= 25°C
T
J
=
−40°C
T
J
= 25°C
T
J
=
−40°C
T
J
= +110°C
T
J
= 25°C
T
J
=
−40°C
T
J
= 25°C
T
J
=
−40°C
V
TM
I
GT
−
−
2.2
V
mA
T
J
= 25°C
T
J
= 110°C
I
DRM
, I
RRM
−
−
−
−
10
100
mA
mA
Symbol
Min
Typ
Max
Unit
−
−
−
0.4
0.5
0.2
15
35
−
0.60
0.75
−
200
500
6.0
0.8
1.0
−
V
GRM
V
GT
V
V
V
GD
I
L
V
mA
−
−
−
−
−
0.20
0.35
0.19
0.33
0.07
5.0
7.0
mA
3.0
6.0
2.0
I
H
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off−State Voltage
(V
AK
= Rated V
DRM
, Exponential Waveform, R
GK
= 1 kW,
T
J
= 110°C)
3. Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
4. R
GK
is not included in measurement.
dv/dt
−
8.0
−
V/ms
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2
C106 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
100
TC, CASE TEMPERATURE (
°
C)
90
80
70
60
50
40
30
20
10
0
.4
.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
I
T(AV)
AVERAGE ON‐STATE CURRENT (AMPERES)
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD.
50 to 400 Hz
DC
P(AV), AVERAGE ON‐STATE POWER DISSIPATION (WATTS)
110
10
JUNCTION TEMPERATURE
≈
110°C
8
HALF SINE WAVE
RESISTIVE OR INDUCTIVE LOAD
50 TO 400Hz.
DC
6
4
2
0
0
.4
.8
1.2
1.6
2.0
2.4
2.6
3.2
3.6
4.0
I
T(AV)
AVERAGE ON‐STATE CURRENT (AMPERES)
Figure 1. Average Current Derating
Figure 2. Maximum On−State Power Dissipation
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3
C106 Series
100
IGT, GATE TRIGGER CURRENT (
m
A)
1000
IH, HOLDING CURRENT (
m
A)
65
10
100
1
-40 -25
-10
5
20
35
50
80
95
110
10
-40 -25
-10
5
20
35
50
65
80
95
110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Gate Trigger Current versus
Junction Temperature
1.0
VGT , GATE TRIGGER VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-45 -25
-10
5
20
35
50
65
80
95
110
1000
I L , LATCHING CURRENT (
m
A)
Figure 4. Typical Holding Current versus
Junction Temperature
100
10
-40 -25
-10
5
20
35
50
65
80
95
110
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
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4
C106 Series
PACKAGE INTERCHANGEABILITY
The dimensional diagrams below compare the critical dimensions of the ON Semiconductor C-106 package with
competitive devices. It has been demonstrated that the smaller dimensions of the ON Semiconductor package make it
compatible in most lead-mount and chassis-mount applications. The user is advised to compare all critical dimensions for
mounting compatibility.
.295
____
.305
.145
____
.155
.148
____
.158
.115
____
.130
.400
____
.360
.095
____
.105
.135
____
.115
.127
____ DIA
.123
.026
____
.019
.425
____
.435
1 2 3
5
_
TYP
.520
____
.480
.385
____
.365
.050
____
.095
.315
____
.285
.420
____
.400
.105
____
.095
.054
____
.046
.105
____
.095
.575
____
.655
.040
.094 BSC
.025
____
.035
.015
____
.025
.045
____
.055
.190
____
.170
.020
____
.026
ON Semiconductor C-106 Package
Competitive C-106 Package
ORDERING INFORMATION
Device
C106BG
C106DG
C106D1G*
C106MG
C106M1G*
Package
TO−225AA
(Pb−Free)
TO−225AA
(Pb−Free)
TO−225AA
(Pb−Free)
TO−225AA
(Pb−Free)
TO−225AA
(Pb−Free)
Shipping
†
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
*D1 signifies European equivalent for D suffix and M1 signifies European equivalent for M suffix.
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5
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