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SMBJ170A

产品描述极性:Unidirectional 峰值脉冲电流(10/1000us):2.2A 箝位电压:275V 击穿电压(最小值):189V 反向关断电压(典型值):170V
产品类别分立半导体    二极管   
文件大小980KB,共6页
制造商Littelfuse
官网地址http://www.littelfuse.com
标准
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SMBJ170A概述

极性:Unidirectional 峰值脉冲电流(10/1000us):2.2A 箝位电压:275V 击穿电压(最小值):189V 反向关断电压(典型值):170V

SMBJ170A规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证符合
包装说明R-PDSO-C2
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性UL RECOGNIZED
最大击穿电压209 V
最小击穿电压189 V
击穿电压标称值199 V
最大钳位电压275 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AA
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散600 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散1.5 W
认证状态Not Qualified
最大重复峰值反向电压170 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间40
Base Number Matches1

文档预览

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Transient Voltage Suppression Diodes
Surface Mount – 600W > SMBJ series
SMBJ Series
Uni-directional
Bi-directional
Description
RoHS
Pb
e3
The SMBJ is designed specifically to protect sensitive
electronic equipment from voltage transients induced by
lightning and other transient voltage events.
Features
• 600W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
less than 1μA
when V
BR
min>12V
• For surface mounted
applications to optimize
board space
• Low profile package
• Typical failure mode is a
short circuit condition for
current events exceeding
component rating
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Built-in strain relief
• Fast response time:
typically less than 1.0ps
from 0V to BV min
• High temperature
to reflow soldering
guaranteed: 260°C/40sec
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• Plastic package is
flammability rated V-0 per
UL
-94
• Meet MSL level1, per
J-STD-020, lead-frame
maximun peak of 260
°
C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is
Pb-free and the terminal
finish material is tin(Sn)
(IPC/JEDEC J-STD-
609A.01)
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2), (Note 5)
Power Dissipation on Infinite Heat
Sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 50A for Unidirectional
Only (Note 4)
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
T
STG
R
θJL
R
θJA
Value
600
5.0
100
3.5/5.0
-65 to 150
-65 to 175
20
100
Unit
W
W
A
V
°C
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
J
(initial) =25
O
C per Fig. 3.
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
4. V
F
< 3.5V for single die parts and V
F
< 5.0V for stacked-die parts.
5. The P
PPM
of stacked-die parts is 800W; please contact Littelfuse for details on the
stacked-die components.
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic
applications.
Additional Infomarion
Functional Diagram
®
Bi-directional
Datasheet
Anode
Resources
Samples
Cathode
Uni-directional
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/07/17
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