SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
KN4400/4401
EPITAXIAL PLANAR NPN TRANSISTOR
C
Complementary to KN4402/4403.
A
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
RATING
60
40
6
600
625
150
-55 150
UNIT
V
V
V
mA
L
K
D
E
G
H
F
F
1
2
3
mW
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
1996. 1. 28
Revision No : 0
1/3
KN4400/4401
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
KN4401
KN4400
KN4401
KN4400
DC Current Gain
*
KN4401
KN4400
KN4401
KN4400
KN4401
Collector-Emitter Saturation Voltage *
SYMBOL
I
CEX
I
CBO
I
EBO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1)
h
FE
(1)
h
FE
(2)
h
FE
(2)
h
FE
(3)
h
FE
(3)
h
FE
(4)
h
FE
(4)
h
FE
(5)
V
CE(sat)
1
V
CE(sat)
2
V
BE(sat)
1
V
BE(sat)
2
f
T
C
ob
TEST CONDITION
V
CE
=35V, V
EB(OFF)
=0.4V
V
CB
=60V, I
E
=0
V
EB
=6V, I
C
=0
I
C
=100 A, I
E
=0
I
E
=1mA, I
B
=0
I
E
=100 A, I
C
=0
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
MIN.
-
-
-
60
40
6
20
20
40
40
80
50
100
20
40
-
-
0.75
-
200
250
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
100
100
100
-
-
-
-
-
-
-
-
150
300
-
-
0.4
0.75
0.95
1.2
-
-
6.5
V
UNIT
nA
nA
nA
V
V
V
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
=500mA
I
C
=150mA, V
CE
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=20mA, V
CE
=10V, f=100MHz
V
CB
=5V, I
E
=0, f=1.0MHz
Base-Emitter Saturation Voltage
Transition
Frequency
Collector Output Capacitance
*
V
KN4400
KN4401
MHz
pF
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
1996. 1. 28
Revision No : 0
2/3
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