Trans MOSFET N-CH Si 100V 2.2A 4-Pin(3+Tab) SOT-223 T/R
| 参数名称 | 属性值 |
| 欧盟限制某些有害物质的使用 | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| 产品类别 | Power MOSFET |
| Material | Si |
| Configuration | Single Dual Drain |
| Process Technology | HEXFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 2.2 |
| Maximum Drain Source Resistance (mOhm) | 200@10V |
| Typical Gate Charge @ Vgs (nC) | 17@10V |
| Typical Gate Charge @ 10V (nC) | 17 |
| Typical Input Capacitance @ Vds (pF) | 330@25V |
| Maximum Power Dissipation (mW) | 2100 |
| Typical Fall Time (ns) | 20 |
| Typical Rise Time (ns) | 18 |
| Typical Turn-Off Delay Time (ns) | 34 |
| Typical Turn-On Delay Time (ns) | 7.8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| 系列 Packaging | Tape and Reel |
| Pin Count | 4 |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| Mounting | Surface Mount |
| Package Height | 1.7(Max) |
| Package Length | 6.7(Max) |
| Package Width | 3.7(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Lead Shape | Gull-wing |
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